HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS(on) trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C 52 208 52 A A A EAR EAS TC = 25°C TC = 25°C 30 1.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 360 TJ TJM Tstg 1.6 mm (0.063 in) from case for 10 s Md Mounting torque °C °C °C Weight TO-268 (D3) ( IXFT) G TO-264 AA (IXFK) G 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. TO-247 TO-264 TO-268 (TAB) S °C 300 TO-247 TO-264 (TAB) W -55 ... +150 150 -55 ... +150 TL TO-247 AD (IXFH) 6 10 4 g g g D G = Gate S = Source D (TAB) S TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 300 VGS(th) VDS = VGS, ID = 4 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4 V ±200 nA 50 1 mA mA 60 mW • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density 98522B (7/00) 1-2 IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 22 TO-247 AD (IXFH) Outline 35 S 5300 pF 1010 pF C rss 200 pF td(on) 27 ns Dim. Millimeter Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Inches Min. Max. tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns td(off) RG = 1.5 W (External), 80 ns 25 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 150 nC E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 34 nC 75 nC G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.35 TO-247 TO-264 0.25 0.15 K/W K/W K/W L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-264 AA Outline Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 52 A Repetitive; pulse width limited by TJM 208 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A 1 8 IF = IS -di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2