IXYS IXFN20N120

Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFN 20N120
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
VDSS
ID25
= 1200 V
=
20 A
RDS(on) = 0.75 Ω
≤ 300 ns
trr
D
G
S
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1200
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C, Chip capability
20
A
IDM
TC = 25°C, pulse width limited by TJM
80
A
IAR
TC = 25°C
10
A
EAR
EAS
TC = 25°C
TC = 25°C
40
2
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC= 25°C
780
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
TJ
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque
Terminal connection torque
t = 1 min
t=1s
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
Symbol
30
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 1 mA
1200
VGH(th)
VDS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
g
TJ = 25°C
TJ = 125°C
V
4.5
V
±100
nA
100
2
µA
mA
0.75
Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
• Easy to mount
•
•
Space savings
High power density
DS99116(11/03)
IXFN 20N120
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
15
27
S
7400
pF
560
pF
Crss
100
pF
td(on)
25
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
45
ns
td(off)
RG = 1 Ω (External),
75
ns
20
ns
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
160
nC
35
nC
60
nC
RthJC
0.16
RthCK
0.05
Source-Drain Diode
K/W
K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
20
A
ISM
Repetitive;
pulse width limited by TJM
80
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
300
ns
µC
A
1.4
8
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXFN 20N120
Fig. 1. Output Characteristics
@ 25 deg. C
Fig. 2. Output Characteristics
@ 125 Deg. C
22
35
VGS = 10V
6V
30
18
16
5V
I D - Amperes
I D - Amperes
25
VGS = 10V
5V
20
20
15
10
14
12
10
8
6
4V
4
5
4V
2
0
0
0
5
10
15
20
25
0
30
5
10
V D S - Volts
15
20
25
30
35
40
V D S - Volts
Fig. 3. RDS(on) Norm alized to ID25 Value vs.
Junction Tem perature
Fig. 4. RDS(on) Norm alized to ID25
Value vs. ID
2.6
2.8
2.6
VGS = 10V
VGS = 10V
2.4
2.2
2
R D S (on) - Normalized
R D S (on) - Normalized
2.4
I D = 20A
1.8
1.6
I D = 10A
1.4
1.2
1
2.2
TJ = 125ºC
2
1.8
1.6
1.4
TJ = 25ºC
1.2
0.8
1
0.6
0.4
0.8
-50
-25
0
25
50
75
100
125
0
150
5
10
15
20
25
30
35
I D - Amperes
TJ - Degrees Centigrade
Fig. 5. Drain Current vs. Case
Tem perature
Fig. 6. Input Adm ittance
30
24
22
25
20
16
I D - Amperes
I D - Amperes
18
14
12
10
8
20
15
TJ = 125ºC
25ºC
-40ºC
10
6
4
5
2
0
0
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
125
150
3
3.5
4
4.5
V G S - Volts
5
5.5
IXFN 20N120
Fig. 8. Source Current vs.
Source-To-Drain Voltage
Fig. 7. Transconductance
55
70
50
60
45
50
TJ = -40ºC
25ºC
125ºC
35
30
I S - Amperes
g f s - Siemens
40
25
20
40
30
TJ = 125ºC
20
15
10
TJ = 25ºC
10
5
0
0
0
5
10
15
20
25
30
35
0.4
0.6
0.8
I D - Amperes
Fig. 9. Gate Charge
1.2
1.4
Fig. 10. Capacitance
10
10000
VDS = 600V
I D = 10A
I G = 10mA
9
Ciss
Capacitance - pF
8
7
VG S - Volts
1
V S D - Volts
6
5
4
3
1000
Coss
100
Crss
2
f = 1MHz
1
10
0
0
20
40
60
80
100
120
140
160
0
5
10
Q G - nanoCoulombs
15
20
25
30
35
40
V D S - Volts
Fig. 11. Maxim um Transient Therm al Resistance
0.18
0.16
R (th) J C - (ºC/W)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
1
10
Pulse Width - milliseconds
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505