IXFR 32N50Q VDSS ID25 HiPerFETTM Power MOSFETs ISOPLUS247TM = 500 V = 30 A = 0.16 Ω = 250 ns RDS(on) trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C 30 120 30 A A A EAS EAR TC = 25°C TC = 25°C 1.5 45 J mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 310 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 6 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 minute leads-to-tab Weight ISOPLUS 247TM E 153432 G D G = Gate S = Source Isolated back surface* D = Drain * Patent pending Features z z z z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1, 2 © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 100 1 µA mA 0.16 Ω z z z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z z z Easy assembly Space savings High power density DS98608D(01/04) IXFR 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT Note 2 18 28 S 3950 pF 640 pF Crss 210 pF td(on) 35 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 42 ns td(off) RG = 1 Ω (External), 75 ns 20 ns 150 nC 26 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.40 RthCK 0.15 Source-Drain Diode Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 QRM IF = Is, -di/dt = 100 A/ms, VR = 100 V IT test condition: IT = 16A Note: 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % K/W 32 A 128 A 1.5 V 250 ns 0.75 µC 7.5 A IRM Note: 1. K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol trr ISOPLUS 247 OUTLINE IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFR 32N50Q Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 80 ID - Amperes 60 TJ = 125OC 6V 50 40 30 20 30 5V 20 4V 0 0 4 8 12 16 0 20 0 4 8 VDS - Volts 2.8 2.8 RDS(ON) - Normalized RDS(ON) - Normalized Tj=1250 C 2.0 1.6 Tj=250 C 1.2 20 30 40 50 2.4 ID = 32A 2.0 ID = 16A 1.6 1.2 0.8 25 60 50 32 40 ID - Amperes 50 24 16 8 0 25 50 75 TC - Degrees C © 2004 IXYS All rights reserved 125 150 30 20 100 125 150 0 TJ = 25oC TJ = 125oC 10 -25 100 Figure 6. Admittance Curves Figure 5. Drain Current vs. Case Temperature 40 -50 75 TJ - Degrees C ID - Amperes 0 20 VGS = 10V 2.4 10 16 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ VGS = 10V 0 12 VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID ID - Amperes 6V 10 5V 10 0.8 VGS= 9V 8V 7V 40 ID - Amperes 70 50 VGS=10V 9V 8V 7V TJ = 25OC 2 3 4 VGS - Volts 5 6 IXFR 32N50Q 10000 12 Vds=300V ID=16A =30A IG=10mA 10 VGS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge F = 1MHz Ciss Capacitance - pF 14 8 6 4 Coss 1000 Crss 2 0 0 50 100 150 200 100 250 0 Gate Charge - nC 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.60 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505