IXYS 6N100F

Power MOSFETs
F-Class: MegaHertz Switching
IXFH 6N100F VDSS
IXFT 6N100F ID25
RDS(on)
= 1000 V
=
6A
= 1.9 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAR
EAS
TC = 25°C
TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
(TAB)
1000
1000
V
V
±20
±30
V
V
6
24
6
A
A
A
20
500
mJ
mJ
15
V/ns
180
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 500uA
1000
VGS(th)
VDS = VGS, ID = 2.5 mA
3.0
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
© 2002 IXYS All rights reserved
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
5.5 V
±100 nA
TJ = 125°C
50 µA
1 mA
1.9 Ω
TO-268 (IXFT) Case Style
G
(TAB)
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
●
RF capable MOSFETs
●
Double metal process for low gate
resistance
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic rectifier
Applications
DC-DC converters
●
Switched-mode and resonant-mode
power supplies, >500kHz switching
●
DC choppers
●
13.5 MHz industrial applications
●
Pulse generation
●
Laser drivers
●
RF amplifiers
●
Advantages
●
Space savings
●
High power density
98732B (9/02)
IXFH 6N100F
IXFT 6N100F
Symbol
gfs
Test Conditions
V DS = 20 V; ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
3
5.5
S
1770
pF
186
pF
C rss
53
pF
td(on)
11
ns
8.6
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 2.0 Ω (External),
21
ns
tf
8.3
ns
Qg(on)
54
nC
14
nC
27
nC
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.65
(TO-247)
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
6
A
Repetitive;
pulse width limited by TJM
24
A
IF = IS, VGS = 0 V, Note 1
1.5
V
250
ns
t rr
QRM
K/W
IF = IS,-di/dt = 100 A/µs, VR = 100 V
0.6
µC
4
A
IRM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
3
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Dim.
Min Recommended Footprint
2
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFH 6N100F
IXFT 6N100F
Fig. 1. Output Characteristics at 25oC
Fig. 2. Output Characteristics at 125oC
8
12
TJ = 25OC
VGS = 10V
9V
8V
7V
6
ID - Amperes
ID - Amperes
10
VGS = 10V
9V
8V
7V
TJ = 125OC
8
6V
6
4
6V
4
5V
2
2
5V
0
0
0
5
10
15
20
0
5
10
Fig. 3. RDS(ON) vs. Drain Current
25
Fig. 4. RDS(ON) vs. TJ
4
3.0
RDS(ON) - Normalized
VGS = 10V
RDS(ON) - Normalized
20
VDS - Volts
VDS - Volts
3
TJ = 125OC
2
O
TJ = 25 C
1
0
15
0
2
4
6
8
10
2.0
ID = 6A
1.5
1.0
ID = 3A
0.5
0.0
12
VGS = 10V
2.5
-25
0
ID - Amperes
25
50
75
100 125 150
T J - Degrees C
Fig. 5. Drain Current vs. Case Temperature
Fig. 6. Admittance Curves
8
6
ID - Amperes
ID - Amperes
6
4
2
0
-50
4
TJ = 125oC
2
TJ = 25oC
TJ = -40oC
-25
0
25
50
75
T C - Degrees C
© 2002 IXYS All rights reserved
100 125 150
0
3.5
4.0
4.5
5.0
VGS - Volts
5.5
6.0
6.5
IXFH 6N100F
IXFT 6N100F
Fig. 7. Gate Charge Characteristic Curve
Fig. 8. Capacitance Curves
10
2000
VDS = 500V
8
IG = 10mA
Capacitance - pF
VGE - Volts
Ciss
ID = 3A
6
4
1000
700
500
400
300
2
0
0
10
20
30
40
f = 1MHz
Coss
200
100
70
50
40
Crss
0
50
5
10
15
20
25
30
35
40
VDS - Volts
Qg - nanocoulombs
Fig. 9. Source Current vs. Source to Drain Voltage
18
16
ID - Amperes
14
12
O
TJ = 125 C
10
8
TJ = 125oC
6
TJ = 25oC
TJ = 25OC
4
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig. 10. Thermal Impedance
1
D=0.5
ZthJC (K/W)
D=0.2
0.1
D=0.1
D=0.05
D = Duty Cycle
D=0.02
D=0.01
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1