IXFA 3N120 IXFP 3N120 HiPerFETTM Power MOSFETs VDSS =1200 V = 3A ID25 RDS(on) = 4.5 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient Maximum Ratings ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR ±30 V 3 A 12 A TC = 25°C 3 A TC = 25°C 20 mJ 700 mJ 10 V/ns EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4.7 Ω PD TC = 25°C TJ 200 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TO-220) Weight TO-220 TO-263 1.13/10 Nm/lb.in. 4 2 g g TO-220 (IXFP) D (TAB) G TO-263 (IXFA) G G = Gate S = Source z z z Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 1.5 mA IGSS VGS = ±20 VDC, VDS = 0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 D = Drain TAB = Drain z Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification V 5.0 V ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C 50 2 µA mA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 4.5 Ω © 2004 IXYS All rights reserved D (TAB) S Features z Symbol DS Advantages z z z Easy to mount Space savings High power density DS99036B(07/04) IXFA 3N120 IXFP 3N120 Symbol Test Conditions gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 2.5 S 1.5 1050 pF 100 pF Crss 25 pF td(on) 17 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns td(off) RG = 4.7 Ω (External), 32 ns tf 18 ns Qg(on) 39 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 9 nC 22 nC RthJC RthCK 0.62 (TO-220) 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 A Repetitive; pulse width limited by TJM 12 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 300 ns trr QRM TO-220 (IXFP) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IF = IS, -di/dt = 100 A/µs, VR = 100 V IRM 0.4 µC 1.2 A TO-263 (IXFA) Outline 1. 2. 3. 4. Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Gate Drain Source Drain Bottom Side 6,683,344 6,710,405B2 6,710,463 6,727,585 IXFA 3N120 IXFP 3N120 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 3 7 VG S = 10V 7V 7V 6V 2 5 I D - Amperes I D - Amperes 2.5 VG S = 10V 6 1.5 1 5V 0.5 4 6V 3 2 5V 1 0 0 0 2 4 6 8 10 12 0 5 10 V DS - Volts Fig. 3. Output Characteristics 25 30 Junction Temperature 3 2.8 VG S = 10V 7V 2.5 R D S (on) - Normalized 2.5 6V I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C 2 1.5 5V 1 0.5 VG S = 10V 2.2 1.9 I D = 3A 1.6 1.3 I D = 1.5A 1 0.7 0.4 0 0 5 10 15 20 -50 25 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Fig. 5. RDS(on) Normalized to ID25 Temperature Value vs. I D 3.5 2.8 VG S = 10V 2.5 3 T J = 125º C 2.2 I D - Amperes R D S (on) - Normalized 15 V DS - Volts 1.9 1.6 T J = 25º C 1.3 2.5 2 1.5 1 0.5 1 0 0.7 0 1 2 3 4 I D - Amperes © 2004 IXYS All rights reserved 5 6 7 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade DS99036B(07/04) IXFA 3N120 IXFP 3N120 Fig. 8. T ransconductance Fig. 7. Input Admittance 8 6 7 5 T J = -40º C g f s - Siemens I D - Amperes 6 4 3 T J = 120º C 2 25º C 125º C 4 3 2 -40º C 1 25º C 5 1 0 0 3.5 4 4.5 5 5.5 6 0 6.5 1.5 Fig. 9. Source Current vs. Source-To-Drain 6 7.5 9 40 48 10 9 VD S = 600V I D = 1.5A I G = 10mA 8 8 7 6 VG S - Volts I S - Amperes 4.5 Fig. 10. Gate Charge Voltage 5 4 T J = 125º C 3 2 6 4 2 1 T J = 25º C 0 0 0.4 0.5 0.6 0.7 0.8 0 0.9 8 16 24 32 Q G - nanoCoulombs V SD - Volts Fig. 12. Maximum T ransient Thermal Resistance Fig. 11. Capacitance 10000 0.7 f = 1M Hz 0.6 C iss R (th) J C - (ºC/W) Capacitance - pF 3 I D - Amperes V GS - Volts 1000 C oss 100 C rss 0.5 0.4 0.3 0.2 0.1 10 0 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000