IXYS IXTT6N120

IXTH 6N120
IXTT 6N120
High Voltage
Power MOSFET
VDSS
ID25
= 1200 V
=
6A
= 2.6 Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
IAR
1200
1200
V
V
±20
±30
V
V
6
A
24
A
TC = 25°C
6
A
EAR
TC = 25°C
25
mJ
EAS
TC = 25°C
500
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247 AD
TO-268
(TAB)
TO-268 (IXTT) Case Style
G
5
V/ns
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
z
1.13/10 Nm/lb.in.
z
TJ ≤ 150°C, RG = 2 Ω
PD
TO-247 AD (IXTH)
6
4
g
g
G = Gate
S = Source
Features
z
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
1200
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
5.0
V
±100
nA
25
500
µA
µA
2.6
Ω
(TAB)
S
D = Drain
TAB = Drain
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99024B(01/04)
IXTH 6N120
IXTT 6N120
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
5
S
1950
pF
175
pF
C rss
60
pF
td(on)
28
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
3
tr
V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
33
ns
td(off)
RG = 4.7 Ω (External)
42
ns
tf
18
ns
Qg(on)
56
nC
13
nC
25
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.42
(TO-247)
Source-Drain Diode
0.21
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
6
A
ISM
Repetitive
24
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
Trr
IF = 6A
-di/dt = 100 A/µs
850
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTH 6N120
IXTT 6N120
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
10
6
VGS = 10V
9V
8V
7V
4
VGS = 10V
9V
8V
7V
8
ID - Amperes
ID - Amperes
5
6V
3
2
6
2
5V
1
6V
4
5V
0
0
0
2
4
6
8
10
12
V DS - Volts
14
16
0
5
20
25
30
Fig. 4. RDS(on) Normalized to ID25 Value vs.
@ 125 Deg. C
Junction Temperature
6
3.1
VGS = 10V
9V
8V
7V
6V
4
VGS = 10V
2.8
RDS(on) - Normalized
5
ID - Amperes
15
V DS - Volts
Fig. 3. Output Characteristics
3
2
5V
1
2.5
2.2
1.9
ID = 6A
1.6
1.3
ID = 3A
1
0.7
0.4
0
0
5
10
15
20
25
-50
30
-25
V DS - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to I D25
Value vs. I D
7
2.8
VGS = 10V
2.5
6
T J = 125ºC
2.2
5
ID - Amperes
RDS(on) - Normalized
10
1.9
1.6
T J = 25ºC
1.3
4
3
2
1
1
0
0.7
0
1.5
3
4.5
6
ID - Amperes
© 2004 IXYS All rights reserved
7.5
9
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTH 6N120
IXTT 6N120
Fig. 8. Transconductance
6
12
5
10
4
8
Gfs - Siemens
ID - Amperes
Fig. 7. Input Admittance
T J = -40ºC
25ºC
125ºC
3
2
1
T J = -40ºC
25ºC
125ºC
6
4
2
0
0
3.5
4
4.5
5
5.5
6
6.5
0
V GS - Volts
1.5
4.5
6
7.5
9
ID - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
20
10
16
8
VGS - Volts
IS - Amperes
3
12
8
T J = 125ºC
4
VDS = 600V
ID = 3A
IG = 10mA
6
4
2
T J = 25ºC
0
0
0.4
0.5
0.6
0.7
0.8
0.9
0
V SD - Volts
10
20
30
40
50
60
QG - nanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
1
C iss
1000
R(th)JC - (ºC/W)
Capacitance - pF
f = 1M hz
C oss
100
0.1
C rss
10
0.01
0
5
10
15
20
25
V DS - Volts
30
35
40
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343