HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms 120 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH PC TC = 25°C ICM = 60 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 6 Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V BVCES temperature coefficient 600 IC = 250 mA, VCE = VGE VGE(th) temperature coefficient 2.5 VGE(th) ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VCE(sat) IC IC = IC110, VGE = 15 V = IC110, VGE = 15 V V %/K 0.072 TJ = 150°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 150°C = 600 V = 60 A = 1.8 V = 100 ns TO-247 AD (IXGH) G C (TAB) C E TO-268 (D3) (IXGT) G (TAB) E 1.13/10 Nm/lb.in. Weight VCES IC25 VCE(sat) tfi 5 -0.286 V %/K 200 1 mA mA ±100 nA 1.8 2.0 V V G = Gate, E = Emitter, C = Collector, TAB = Collector Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • High power density • Suitable for surface mounting • Switching speed for high frequency applications • Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) 97516D (7/00) 1-2 IXGH30N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC110; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies S 2700 pF 190 pF C res 50 pF Qg 125 150 nC 23 35 nC 50 75 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 25 IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C 25 ns t ri IC = IC110, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W 30 ns td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG TO-247 AD (IXGH) Outline Dim. Millimeter Min. Max. Inches Min. Max. 130 220 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 100 190 ns 1.3 2 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 Inductive load, TJ = 150°C 25 ns IC = IC110, VGE = 15 V, L = 100 mH 35 ns VCE = 0.8 VCES, RG = Roff = 4.7 W 0.3 mJ 200 ns 290 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 3 mJ N 1.5 2.49 0.087 0.102 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK IXGT30N60B 0.62 K/W 0.25 (IXGH30N60B) K/W IXBH30N60B characteristic curves are located in the IXBH30N60BU1 data sheet. TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2