IXYS IXGT31N60D1

Ultra-Low VCE(sat)
IGBT with Diode
IXGH 31N60D1
IXGT 31N60D1
VCES
IC25
VCE(sat)
= 600 V
= 60 A
= 1.7 V
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
60
A
IC90
TC = 90°C
31
A
ICM
TC = 25°C, 1 ms
80
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 62
@ 0.8 VCES
A
PC
TC = 25°C
150
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque (M3) TO-247
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
Symbol
Test Conditions
BVCES
IC
= 250 mA, VGE = 0 V
600
VGE(th)
IC
= 250 mA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
°C
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
300
V
5.5
V
200
3
mA
mA
±100
nA
1.7
V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
• IGBT and anti-parallel FRED in one
package
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Reduces assembly time and cost
• High power density
98559A (7/00)
1-2
IXGH 31N60D1
IXGT 31N60D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
10
Cies
S
1500
pF
130
pF
Cres
40
pF
Qg
80
100
nC
15
30
nC
30
40
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
16
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
TO-247 AD (IXGH) Outline
td(on)
Inductive load, TJ = 25°C
15
ns
Dim. Millimeter
Min. Max.
t ri
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
25
ns
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC
= IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
400
800
ns
400
800
ns
6
mJ
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
15
ns
25
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
1
mJ
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
800
ns
800
ns
12
mJ
RthJC
0.83 K/W
RthCK
0.25
Reverse Diode (FRED)
Symbol
Test Conditions
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-268AA (D3 PAK)
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = IC90, VGE = 0 V,
TJ = 150°C
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
TJ =100°C
TJ = 25°C
1.6
2.5
6
100
25
RthJC
V
V
A
ns
ns
1 K/W
Min. Recommended Footprint
© 2000 IXYS All rights reserved
Inches
Min. Max.
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
2-2