Ultra-Low VCE(sat) IGBT with Diode IXGH 31N60D1 IXGT 31N60D1 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 31 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH ICM = 62 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) TO-247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC °C 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 300 V 5.5 V 200 3 mA mA ±100 nA 1.7 V TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features • IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications • AC motor speed control • DC servo and robot drives • DC choppers Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw (isolated mounting screw hole) • Reduces assembly time and cost • High power density 98559A (7/00) 1-2 IXGH 31N60D1 IXGT 31N60D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 10 Cies S 1500 pF 130 pF Cres 40 pF Qg 80 100 nC 15 30 nC 30 40 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 16 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 15 ns Dim. Millimeter Min. Max. t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W 25 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 400 800 ns 400 800 ns 6 mJ E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 15 ns 25 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 1 mJ J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 800 ns 800 ns 12 mJ RthJC 0.83 K/W RthCK 0.25 Reverse Diode (FRED) Symbol Test Conditions L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-268AA (D3 PAK) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = IC90, VGE = 0 V, TJ = 150°C Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =100°C TJ = 25°C 1.6 2.5 6 100 25 RthJC V V A ns ns 1 K/W Min. Recommended Footprint © 2000 IXYS All rights reserved Inches Min. Max. Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-2