HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES I C(25) VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES T J = 25°C to 150°C 500 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 500 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC90 TC = 90°C 24 A ICM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE= 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH ICM = 48 @ 0.8 VCES A PC TC = 25°C 150 W Features • International standard packages JEDEC TO-247 AD • High frequency IGBT • High current handling capability • 3rd generation HDMOSTM process • MOS Gate turn-on - drive simplicity -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 1.13/10 Weight Nm/lb.in. 6 C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector g Applications Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V VGE(th) IC = 250 mA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 24N50 24N60 500 600 2.5 TJ = 25°C TJ = 125°C 24N50 24N60 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 5 V V V 200 1 mA mA ±100 nA 2.3 2.5 V V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages • High power density • Switching speed for high frequency applications • Easy to mount with 1 screw (insulated mounting screw hole) 95584 B (7/00) 1-4 IXGH24N50B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 9 C ies S 1500 pF 135 pF C res 40 pF Qg 90 120 nC 11 15 nC 30 40 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 13 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri Eon td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 24N50B 24N60B Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 24N50B 24N60B © 2000 IXYS All rights reserved TO-247 AD (IXGH) Outline 25 ns 15 ns 0.6 mJ A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 ns C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 150 200 80 150 ns 0.62 0.80 mJ mJ 25 ns 15 ns 0.8 mJ 250 ns 100 ns 0.9 1.4 mJ mJ Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.83 K/W RthJC RthCK IXGH24N60B 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGH24N50B 50 TJ = 25°C VGE = 15V 13V 160 IC - Amperes 40 IC - Amperes 200 VGE = 13V 11V 9V VGE = 15V TJ = 125°C IXGH24N60B 7V 30 20 11V 120 9V 80 7V 10 40 5V 5V 0 0 0 1 2 3 4 0 5 2 4 10 Fig. 2. Extended Output Characteristics Fig. 1. Saturation Voltage Characteristics 1.6 50 40 VGE = 15V 13V 11V 7V 30 20 5V 10 1 2 3 4 1.4 1.2 IC = 24A 1.0 IC = 12A 0.8 0.6 25 0 0 IC = 48A VGE = 15V 9V VCE (sat) - Normalized TJ = 125°C IC - Amperes 8 VCE - Volts VCE - Volts 5 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 4. Temperature Dependence of VCE(sat) Fig. 3. Saturation Voltage Characteristics 100 1.2 BV/VGE(th) - Normalized VCE = 10V 80 IC - Amperes 6 60 40 TJ = 125°C 20 VGE(th) IC = 3mA 1.1 1.0 0.9 BVCES IC = 3mA 0.8 TJ = 25°C 0 3 4 5 6 7 8 9 Fig. 5. Admittance Curves © 2000 IXYS All rights reserved 10 11 12 0.7 -50 -25 0 25 50 75 100 125 150 Fig. 6. Temperature Dependence of BVDSS & VGE(th) 3-4 IXGH24N50B 2.5 2.5 RG = 10W 2.0 TJ = 125°C IC = 24A 24N60B E(ON) / E(OFF) - milliJoules E(ON) / E(OFF) - milliJoules TJ = 125°C E(OFF) 1.5 E(ON) 1.0 0.5 24N60B 2.0 E(OFF) 1.5 1.0 E(ON) 0.5 0.0 0.0 0 10 20 30 40 0 50 10 20 Fig. 7. Dependence of tfi and EOFF on IC. 15 30 50 Fig. 8. Dependence of tfi and EOFF on RG. 100 IC = 24A IC - Amperes 6 10 0B 24N6 9 0B 24N5 VCE = 300V 12 40 RG - Ohms IC - Amperes VGE - Volts IXGH24N60B TJ = 125°C RG = 10W dV/dt < 5V/ns 1 3 0 0.1 0 20 40 60 80 100 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 D=0.5 RthJC - K/W D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 0.001 0.00001 Single pulse 0.0001 D = Duty Cycle 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4