IGBT IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Combi Pack VCES IC25 VCE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA VGE = 15 V, TVJ = 125°C, RG = 150 W ICM = 24 A (RBSOA) Clamped inductive load, L = 300 mH PC TC = 25°C @ 0.8 VCES 100 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C TJ Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 4 g 300 °C Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. Characteristic Values Typ. Max. BVCES IC = 3 mA, VGE = 0 V 1000 V VGE(th) IC = 250 mA, VGE = VGE ICES VCE = 0.8, VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 2.5 5.5 V TJ = 25°C 300 mA TJ = 125°C 3 mA ±100 nA 3.5 4.0 V V 12N100 12N100A IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-263 AA (IXGA) G TJM Md G C E E C (TAB) Features • International standard packages JEDEC TO-220AB and TO-263AA • IGBT with antiparallel FRED in one package • Second generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with one screw • Space savings (two devices in one package) • Reduces assembly time and cost • High power density 95592A (3/97) 1-4 IXGA12N100U1 IXGA12N100AU1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % gfs Qg Qge 6 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 10 65 8 90 20 nC nC 24 45 nC Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 mH td(off) tfi VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may 12N100A 850 500 1000 700 ns ns Eoff increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 12N100 12N100A 800 1000 4 6 ns mJ 100 ns 200 1.1 ns mJ 900 950 ns ns 12N100 1250 12N100A 8 ns mJ 12N100 mJ 100 200 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH t ri Eon VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may td(off) tfi increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Eoff 12N100A ns ns 10 1.25 RthJC 0.25 RthCK TO-220 AB (IXGP) Outline S td(on) t ri td(on) IXGP12N100U1 IXGP12N100AU1 K/W K/W Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA (IXGA) Outline Reverse Diode (FRED) (T J = 25°C, unless otherwise specified) Symbol Test Conditions VF IF Characteristic Values Min. Typ. =8A, VGE = 0 V, Max. 2.75 V Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V, TJ = 125°C IF A 140 = 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C RthJC 6.5 50 ns 60 ns 2.5 K/W Min. Recommended Footprint © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXGA12N100U1 IXGA12N100AU1 100 50 VGE = 15V TJ = 25°C 13V 11V TJ = 25°C VGE = 15V 80 IC - Amperes 40 IC - Amperes IXGP12N100U1 IXGP12N100AU1 9V 30 20 13V 60 11V 40 9V 7V 20 10 7V 0 0 0 2 4 6 8 0 10 4 8 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 1.6 50 40 VGE = 15V 13V 11V VGE = 15V VCE (sat) - Normalized TJ = 125°C IC - Amperes 12 30 9V 20 7V 10 IC = 24A 1.4 1.2 IC = 12A 1.0 0.8 IC = 6A 0.6 25 0 0 2 4 6 8 10 50 75 VCE - Volts 100 125 150 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 1000 50 VCE = 10V Capacitance - pF TJ = 25°C IC - Amperes f = 1Mhz Ciss 40 30 TJ = 125°C 20 Coss 100 Crss 10 10 0 2 4 6 8 VGE - Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved 10 12 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 6. Capacitance Curves 3-4 IXGA12N100U1 IXGA12N100AU1 1200 5 IXGP12N100U1 IXGP12N100AU1 1000 5 TJ = 125°C 1000 3 E(OFF) 900 2 t fi - nanoseconds t fi tfi 800 4 600 3 400 2 E(OFF) 200 800 0 5 10 15 1 20 1 0 0 30 IC - Amperes 90 120 0 150 Figure 8. Dependence of tfi and EOFF on RG. 100 IC = 30A VCE = 150V 24 IC - Amperes 12 VGE - Volts 60 RG - Ohms Figure 7. Dependence of tfi and EOFF on IC. 15 E(OFF) - millijoules 4 E(OFF) - milliJoules t fi - nanoseconds RG = 120 1100 TJ = 125°C IC = 12A 9 6 TJ = 125°C RG = 4.7 10 dV/dt < 5V/ns 1 3 0.1 0 0 15 30 45 60 75 0 200 400 600 800 1000 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area 1 D=0.5 D=0.2 ZthJC (K/W) D=0.1 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4