HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms 112 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH PC Maximum Ratings ICM = 56 @ 0.8 VCES TC = 25°C °C 150 °C Tstg -55 ... +150 °C Mounting torque (M3) TO-247 AD TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC °C 260 °C 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 mA, VGE = 0 V = 250 mA, VCE = VGE 300 2.5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 300 1.13/10 Nm/lb.in. Weight 1.6 (TAB) TO-247 AD W -55 ... +150 Md E G TJM Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s G A 150 TJ TO-268 (IXGT) 5 V V 200 1 mA mA ±100 nA 1.8 V G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies Advantages • High power density • Suitable for surface mounting • Switching speed for high frequency applications • Easy to mount with 1 screw, (isolated mounting screw hole) 97528A (9/98) 1-2 IXGH 28N30 IXGT 28N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 12 C ies S 1500 pF 130 pF C res 40 pF Qg 90 nC 15 nC 35 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 18 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 15 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W 30 ns 130 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 180 ns 0.8 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 15 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 30 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 0.3 mJ J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 250 500 ns 250 600 ns 1.5 3.0 mJ RthJC 0.25 Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 0.83 K/W RthCK TO-268AA (D3 PAK) Dim. Millimeter Min. Max. Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 K/W Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2