HiPerFASTTM IGBT IXGH 15N120B VCES IXGT 15N120B IC25 VCE(sat) = 1200 = 30 = 3.2 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC110 TC = 110°C 15 A ICM TC = 25°C, 1 ms 60 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 40 @ 0.8 VCES A 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C PC TC = 25°C TJ Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) °C 260 °C 1.13/10Nm/lb.in. Weight TO-247 AD TO-268 TO-268 (IXGT) G E 6 4 g g C (TAB) TO-247 AD (IXGH) G 300 V A V ns G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features • International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD • Low switching losses, low V(sat) • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE = IC90, VGE = 15 V © 2002 IXYS All rights reserved 1200 2.5 TJ = 25°C TJ = 125°C TJ = 125°C 2.5 5 V V 100 3.5 µA mA ±100 nA 3.2 V V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages • High power density • Suitable for surface mounting • Easy to mount with 1 screw, (isolated mounting screw hole) 98659-B (9/02) IXGH IXGT Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC110 ; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 15 S 1720 pF 95 pF Cres 35 pF Qg 69 nC 13 nC 26 nC Cies Coes Qge 12 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC110 , VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 25 ns tri IC = IC110 , VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 15 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 180 280 ns 160 320 ns 1.75 3.0 mJ 25 ns 18 ns 0.60 mJ 300 ns 360 ns 3.5 mJ Inductive load, TJ = 125°°C IC = IC110 , VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK 15N120B 15N120B TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.65 K/W (TO-247) 0.25 K/W Min Recommended Footprint Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH IXGT Fig. 1. Saturation Voltage Characteristics @ 25oC Fig. 2. Extended Output Characteristics 150 50 TJ = 25OC 9V 30 7V 20 13V 100 IC - Amperes IC - Amperes 40 VGE = 15V TJ = 25oC 125 VGS = 15V 13V 11V 11V 75 9V 50 10 7V 25 5V 0 0 2 5V 4 6 8 0 10 0 5 10 15 VCE - Volts VCE - Volts Fig. 3. Saturation Voltage Characteristics @ 125oC Fig. 4. Temperature Dependence of VCE(SAT) 50 1.6 TJ = 125OC VGE = 15V VGS = 15V 13V 11V 30 VCE (SAT) - Normalized 40 IC - Amperes 15N120B 15N120B 9V 7V 20 10 IC = 30A 1.4 1.2 IC = 15A 1.0 IC = 7.5A 0.8 0.6 5V 0 0 2 4 6 8 0.4 10 -25 0 VCE - Volts 75 100 125 150 Fig. 6. Capacitance Curves 10000 o TJ = 125 C Ciss Capacitance - pF IC - Amperes 50 T J - Degrees C Fig. 5. Admittance Curves 60 55 50 45 40 35 30 25 20 15 10 5 0 25 TJ = 25oC 1000 Coss 100 TJ = -40oC 4 5 6 7 VGE - Volts © 2002 IXYS All rights reserved Crss 8 9 10 10 0 5 10 15 20 25 VCE - Volts 30 35 40 IXGH IXGT Fig. 7. Dependence of EOFF on IC. Fig. 8. Dependence of EOFF on RG. 8 8 TJ = 125°C TJ = 125°C 7 RG = 10Ω 6 5 E(OFF) - millijoules E(OFF) - millijoules 7 E(OFF) 4 3 2 E(OFF) IC = 30A 6 5 4 3 E(OFF) IC = 15A 2 IC = 7.5A 1 1 E(OFF) 0 0 5 10 15 20 25 30 0 35 10 20 30 40 50 60 RG - Ohms IC - Amperes Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 15.0 100 IC = 15A VCE = 600V IG = 15mA 30 IC - Amperes 12.5 10.0 VGE - Volts 15N120B 15N120B 7.5 5.0 10 TJ = -55 to +125°C RG = 10Ω dV/dt < 5V/ns 1 2.5 0.0 0.1 0 10 20 30 40 50 60 70 80 90 0 200 Qg - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig. 11. Thermal Impedance 1 D=0.5 ZthJC (K/W) D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.6 0.1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1