V - Europower Components Ltd

HiPerFASTTM IGBT
IXGH 15N120B VCES
IXGT 15N120B IC25
VCE(sat)
= 1200
= 30
= 3.2
= 160
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
30
A
IC110
TC = 110°C
15
A
ICM
TC = 25°C, 1 ms
60
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM = 40
@ 0.8 VCES
A
180
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
PC
TC = 25°C
TJ
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Md
Mounting torque (M3)
°C
260
°C
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
TO-268
(IXGT)
G
E
6
4
g
g
C (TAB)
TO-247 AD (IXGH)
G
300
V
A
V
ns
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
• International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
• Low switching losses, low V(sat)
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
= IC90, VGE = 15 V
© 2002 IXYS All rights reserved
1200
2.5
TJ = 25°C
TJ = 125°C
TJ = 125°C
2.5
5
V
V
100
3.5
µA
mA
±100
nA
3.2
V
V
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
98659-B (9/02)
IXGH
IXGT
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC110 ; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
15
S
1720
pF
95
pF
Cres
35
pF
Qg
69
nC
13
nC
26
nC
Cies
Coes
Qge
12
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
25
ns
tri
IC = IC110 , VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
15
ns
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
180
280
ns
160
320
ns
1.75
3.0 mJ
25
ns
18
ns
0.60
mJ
300
ns
360
ns
3.5
mJ
Inductive load, TJ = 125°°C
IC = IC110 , VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
RthJC
RthCK
15N120B
15N120B
TO-247 AD Outline
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.65 K/W
(TO-247)
0.25
K/W
Min Recommended Footprint
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXGH
IXGT
Fig. 1. Saturation Voltage Characteristics @ 25oC
Fig. 2. Extended Output Characteristics
150
50
TJ = 25OC
9V
30
7V
20
13V
100
IC - Amperes
IC - Amperes
40
VGE = 15V
TJ = 25oC
125
VGS = 15V
13V
11V
11V
75
9V
50
10
7V
25
5V
0
0
2
5V
4
6
8
0
10
0
5
10
15
VCE - Volts
VCE - Volts
Fig. 3. Saturation Voltage Characteristics @ 125oC
Fig. 4. Temperature Dependence of VCE(SAT)
50
1.6
TJ = 125OC
VGE = 15V
VGS = 15V
13V
11V
30
VCE (SAT) - Normalized
40
IC - Amperes
15N120B
15N120B
9V
7V
20
10
IC = 30A
1.4
1.2
IC = 15A
1.0
IC = 7.5A
0.8
0.6
5V
0
0
2
4
6
8
0.4
10
-25
0
VCE - Volts
75
100 125 150
Fig. 6. Capacitance Curves
10000
o
TJ = 125 C
Ciss
Capacitance - pF
IC - Amperes
50
T J - Degrees C
Fig. 5. Admittance Curves
60
55
50
45
40
35
30
25
20
15
10
5
0
25
TJ = 25oC
1000
Coss
100
TJ = -40oC
4
5
6
7
VGE - Volts
© 2002 IXYS All rights reserved
Crss
8
9
10
10
0
5
10
15
20
25
VCE - Volts
30
35
40
IXGH
IXGT
Fig. 7. Dependence of EOFF on IC.
Fig. 8. Dependence of EOFF on RG.
8
8
TJ = 125°C
TJ = 125°C
7
RG = 10Ω
6
5
E(OFF) - millijoules
E(OFF) - millijoules
7
E(OFF)
4
3
2
E(OFF)
IC = 30A
6
5
4
3
E(OFF)
IC = 15A
2
IC = 7.5A
1
1
E(OFF)
0
0
5
10
15
20
25
30
0
35
10
20
30
40
50
60
RG - Ohms
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
15.0
100
IC = 15A
VCE = 600V
IG = 15mA
30
IC - Amperes
12.5
10.0
VGE - Volts
15N120B
15N120B
7.5
5.0
10
TJ = -55 to +125°C
RG = 10Ω
dV/dt < 5V/ns
1
2.5
0.0
0.1
0
10
20
30
40
50
60
70
80
90
0
200
Qg - nanocoulombs
400
600
800
1000
1200
VCE - Volts
Fig. 11. Thermal Impedance
1
D=0.5
ZthJC (K/W)
D=0.2
0.1 D=0.1
D=0.05
D=0.02
0.01
D=0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.6
0.1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1