IXGH 32N60A IXGH 32N60AS VCES IC25 VCE(sat) tfi HiPerFASTTM IGBT = = = = 600 V 60 A 2.9 V 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; R GE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC TC = 25°C V 120 A ICM = 64 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-247 AD TO-247 SMD 6 4 g g C (TAB) G E TO-247 AD C (TAB) G C G = Gate E = Emitter E C = Collector TAB = Collector Features ● International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD ● High current handling capability ● 2nd generation HDMOSTM process ● MOS Gate turn-on - drive simplicity Applications AC motor speed control ● DC servo and robot drives ● DC choppers ● Uninterruptible power supplies (UPS) ● Switched-mode and resonant-mode power supplies ● Symbol Test Conditions BV CES V GE(th) IC IC I CES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V V CE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE 600 2.5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V ©1995 IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 5 V V 200 1 µA mA ±100 nA 2.9 V Advantages Space savings (two devices in one package) ● High power density ● Suitable for surface mounting ● Switching speed for high frequency applications ● Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) ● 92793H (3/96) IXYS Semiconductor GmbH Edisonstr. 15,D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627 IXGH 32N60A IXGH 32N60AS TO-247 AD Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90 ; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 S 2500 pF 230 pF Cres 70 pF Qg 125 150 nC 23 35 nC 50 75 nC Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 15 ∅P e Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C 25 ns tri IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 4.7 Ω 30 ns td(off) tfi Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 120 200 ns 125 175 ns 1.8 mJ td(on) 25 ns tri 35 ns 1 mJ 140 ns Eoff Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 260 ns 4.0 mJ Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline 0.62 K/W RthJC 0.25 RthCK K/W IXGH 32N60A and IXGH 32N60AS characteristic curves are located in the IXGH 32N60AU1 data sheet. Min. Recommended Footprint (Dimensions in inches and mm) 1. Gate 2. Collector Dim. 3. Emitter 4. Collector A A1 A2 b b1 C D Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 0.61 0.80 20.80 21.34 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .024 .031 .819 .840 E e 15.75 5.45 16.13 BSC .620 .215 .635 BSC L L1 L2 L3 L4 4.90 2.70 2.10 0.00 1.90 5.10 2.90 2.30 0.10 2.10 .193 .106 .083 .00 .075 .201 .114 .091 .004 .083 ØP Q R S 3.55 5.59 4.32 6.15 3.65 6.20 4.83 BSC .140 .220 .170 .242 .144 .244 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15,D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627