Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC(25) VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 20 A IC90 TC = 90°C 10 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH ICM = 20 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive 10 µs PC TC = 25°C 100 W • • C (TAB) -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight 6g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G G = Gate E = Emitter E C = Collector Tab = Collector Features • International standard packages • • • °C 300 C Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 750 µA, VCE = VGE 3.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved TJ = 25°C TJ = 125°C 10N60 10N60A • • • AC motor speed control Uninterruptible power supplies (UPS) Welding V 6.5 V 200 1 µA mA ±100 nA 2.5 3.0 V V Advantages • • Easy to mount with 1 screw (isolated mounting screw hole) High power density 95562B(10/96) IXSH10N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 15 V, VCE = 10 V 50 A Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz 750 125 30 pF pF pF Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES 40 12 20 nC nC nC td(on) tri td(off) tfi Inductive load, T J = 25°° C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES, RG = 150Ω Eoff Note 1 td(on) tri Eon td(off) tfi Eoff 2 Note 1 10N60A 10N60 10N60A 10N60 10N60AU1 10N60AU1 100 200 1.0 300 400 1.5 RthJC RthCK Notes: TO-247 AD Outline S 100 200 250 175 720 0.75 1.2 Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES, RG = 150 Ω IXSH10N60A 80 ns ns ns ns ns mJ mJ 750 410 1.2 1.9 ns ns mJ ns ns mJ 1.25 ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC K/W K/W 0.25 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or RG values. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 © 1996 IXYS All rights reserved IXSH10N60 IXSH10N60A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025