Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 15 A ICM TC = 25°C, 1 ms 60 A SSOA (RBSOA) VGE= 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 40 @ 0.8 VCES A tSC TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 Ω Non repetitive PC TC = 25°C TJ 10 µs 150 W -55 ... +150 °C 150 °C Tstg -55 ... +150 °C Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-220AB (IXSP) G C E C (TAB) TO-263 AA (IXSA) G C (TAB) Features 300 °C • International (TO-263) 260 °C TO-220 TO-263 4 2 g g • Low switching losses, low V • MOS Gate turn-on Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering =1200 V = 30 A = 3.4 V E TJM Md VCES IC25 VCE(sat) standard packages JEDEC TO-220AB and TO-263AA (sat) - drive simplicity Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. BVCES IC = 250 µA, VGE = 0 V 1200 VGE(th) IC = 250 µA, VCE = VGE 3 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 V 6 V TJ = 25°C 50 µA TJ = 125°C 2.5 mA ±100 nA 3.4 V V TJ = 125°C © 2002 IXYS All rights reserved Characteristic Values Typ. Max. 3.0 2.8 • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density 98922 (5/02) IXSA 15N120B IXSP 15N120B Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IC = IC90; VCE = 10 V, gfs TO-220 AB Dimensions Characteristic Values Min. Typ. Max. 7 9.5 S Note2 1400 pF 98 pF Cres 37 pF Qg 57 nC 14 nC 25 nC Inductive load, TJ = 25°°C 30 ns = IC90, VGE = 15 V 25 ns Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) IC tri VCE = 960 V, RG = Roff = 10 Ω Note3 td(off) tfi Eoff td(on) 148 280 160 320 ns 1.75 3.0 mJ IC Eon = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Ω Note3 td(off) ns 30 Inductive load, TJ = 125°°C tri ns 1.1 mJ 265 ns 298 ns Eoff 3.1 mJ 0.83 RthJC TO-220 2 - Collector 4 - Collector Bottom Side ns 25 tfi RthCK Pins: 1 - Gate 3 - Emitter 0.5 K/W K/W TO-263 AA Outline Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. Min. Recommended Footprint (Dimensions in inches and mm) 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1