High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC90 TC = 90°C 24 A ICM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE= 15 V, TJ = 125°C, RG = 33 Ω Clamped inductive load, VCC= 0.8 VCES ICM = 48 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive 10 µs PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque TO-247 AD (IXSH) (TAB) G Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C G E G = Gate E = Emitter Test Conditions z z z z z Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 1.5 mA, VCE = VGE 3.5 ICES VCE = 0.8 • VCES TJ = 25°C VGE = 0 V TJ = 125°C 24N60B 24N60BD1 24N60B 24N60BD1 VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V V z 6.5 V z 25 200 1 2 µA µA mA mA ±100 nA © 2003 IXYS All rights reserved 2.5 V TAB = Collector International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 50 kHz Applications z AC and DC motor speed control Uninterruptible power supplies (UPS) Welding Advantages z IGES (TAB) Features z Symbol E TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. Weight C z Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density DS98768B(02/03) IXSH 24N60B IXST 24N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 9 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 24N60B 24N60BD1 13 S 1450 pF 130 160 pF pF 37 pF 41 nC 18 nC 18 nC 50 ns Cres QG QGE IC = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) tri td(off) Inductive load, TJ = 25°°C 50 IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 33 Ω ns 150 250 ns 170 300 ns Eoff 1.3 2.6 mJ td(on) 55 ns 75 ns tfi tri Inductive load, TJ = 125°°C Eon IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 33 Ω 1.2 mJ 190 ns tfi 280 ns Eoff 2.4 mJ td(off) RthCK 0.25 Reverse Diode (FRED) VF IRM t rr TO-247 AD Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.83 K/W RthJC Symbol IXSH 24N60BD1 IXST 24N60BD1 Test Conditions K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IF = IC90, VGE = 0 V, TJ = 150°C Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs VR = 100 V IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 1.6 2.5 6 TJ = 100°C 100 TJ = 25°C 25 RthJC V V A ns ns 0.9 K/W Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1