IXYS IXST40N60B

IXSH 40N60B VCES
=
=
IXST 40N60B IC25
VCE(sat) =
High Speed IGBT
Short Circuit SOA Capability
tfi typ
600V
75A
2.2V
=
100 ns
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
40
A
ICM
TC = 25°C, 1 ms
150
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7 W
Clamped inductive load, VCC= 0.8 VCES
ICM = 80
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 22 W, non repetitive
10
ms
PC
TC = 25°C
280
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
BVCES
IC
= 250 mA, VGE = 0 V
VGE(th)
IC
= 4 mA, VCE = VGE
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
g
300
°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
6
V
7
V
25
1
mA
mA
±100
nA
2.2
V
TO-247 AD (IXSH)
(TAB)
G
C
E
TO-268 (D3) ( IXST)
G
E
G = Gate
E = Emitter
(TAB)
TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast Fall Time for switching speeds
up to 50 kHz
Applications
• AC and DC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power density
98521B (7/00)
1-2
IXSH 40N60B
IXST 40N60B
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
C ies
Coes
23
S
3700
pF
280
pF
C res
80
pF
Qg
190
nC
45
nC
90
nC
50
ns
50
ns
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
16
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
Inductive load, TJ = 25°C
td(off)
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = 2.7 W
tfi
110
200
ns
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
120
200
ns
Eoff
1.8
2.6
mJ
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
td(on)
55
ns
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
170
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
1.7
mJ
190
ns
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tfi
180
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
Eoff
2.0
mJ
N
1.5 2.49
0.087 0.102
t ri
Eon
td(off)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
VCE = 0.8 VCES, RG = 2.7 W
0.45 K/W
RthJC
RthCK
(IXSH40N60B)
0.25
TO-268AA (D3 PAK)
K/W
Dim.
Min. Recommended Footprint
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
2-2