IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = High Speed IGBT Short Circuit SOA Capability tfi typ 600V 75A 2.2V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES ICM = 80 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 280 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions BVCES IC = 250 mA, VGE = 0 V VGE(th) IC = 4 mA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 6 V 7 V 25 1 mA mA ±100 nA 2.2 V TO-247 AD (IXSH) (TAB) G C E TO-268 (D3) ( IXST) G E G = Gate E = Emitter (TAB) TAB = Collector Features • International standard packages • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast Fall Time for switching speeds up to 50 kHz Applications • AC and DC motor speed control • Uninterruptible power supplies (UPS) • Welding Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • High power density 98521B (7/00) 1-2 IXSH 40N60B IXST 40N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes 23 S 3700 pF 280 pF C res 80 pF Qg 190 nC 45 nC 90 nC 50 ns 50 ns Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 16 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri Inductive load, TJ = 25°C td(off) IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 W tfi 110 200 ns TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 120 200 ns Eoff 1.8 2.6 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 td(on) 55 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 170 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 1.7 mJ 190 ns J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tfi 180 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 Eoff 2.0 mJ N 1.5 2.49 0.087 0.102 t ri Eon td(off) Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W 0.45 K/W RthJC RthCK (IXSH40N60B) 0.25 TO-268AA (D3 PAK) K/W Dim. Min. Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-2