IXYS IXSM35N100A

High speed IGBT
IXSH 35N100A
IXSM 35N100A
VCES
IC25
VCE(sat)
= 1000 V
= 70 A
= 3.5 V
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1000
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1000
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
70
A
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7 W
Clamped inductive load, L = 30 mH
tSC
(SCSOA)
VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
PC
TC = 25°C
35
A
140
A
ICM = 70
@ 0.8 VCES
A
10
ms
300
W
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
TJ
Mounting torque
Weight
G
C
E
TO-204 AE (IXSM)
C
TJM
Md
TO-247 AD (IXSH)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 20 kHz
●
●
●
●
●
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 3 mA, VGE = 0 V
1000
VGE(th)
IC
= 4 mA, VCE = VGE
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
V
●
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
●
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
8
V
250
1
mA
mA
±100
nA
3.5
V
●
●
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
●
●
91545F (12/96)
1-4
IXSH 35N100A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VGE = 15 V, VCE = 10 V
C ies
25
S
240
A
4400
pF
325
pF
C res
85
pF
Qg
180
260
nC
45
60
nC
120
200
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
20
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
Eoff
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
td(on)
tfi
t ri
Eon
td(off)
tfi
Eoff
80
ns
150
ns
400
ns
700
950
ns
IXSM 35N100A
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
10
mJ
Inductive load, TJ = 125°C
100
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
IC = IC90, VGE = 15 V, L = 100 mH
200
ns
VCE = 0.8 VCES, RG = 2.7 W
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
4.2
mJ
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
400
550
ns
1300
2000
ns
15
31
mJ
RthJC
RthCK
0.42 K/W
0.25
TO-204 AE (IXSM) Outline
K/W
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
38.61 39.12
- 22.22
6.40 11.40
1.45 1.60
1.52 3.43
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 26.66
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
1.520 1.540
- 0.875
0.252 0.449
0.057 0.063
0.060 0.135
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
2-4
IXSH 35N100A
Fig.1 Saturation Characteristics
70
VGE =15V
TJ = 25°C
Fig.2
Output Characterstics
250
13V
VGE = 15V
TJ = 25°C
11V
60
IXSM 35N100A
IC - Amperes
IC - Amperes
200
50
40
30
9V
20
13V
150
11V
100
50
9V
10
7V
7V
0
0
0
1
2
3
4
5
0
2
4
6
VCE - Volts
Fig.4
VGE=15V
1.3
VCE(sat) - Normalized
8
7
VCE - Volts
Temperature Dependence
of Output Saturation Voltage
1.4
TJ = 25°C
9
10 12 14 16 18 20
VCE - Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
8
6
IC = 70A
5
4
IC = 35A
3
IC = 17.5A
2
0
9
10
11
12
13
1.2
1.1
IC = 35A
1.0
0.9
IC =1 7.5A
0.8
1
8
IC = 70A
14
0.7
-50
15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig.5 Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
50
IC - Amperes
40
30
20
TJ = 125°C
TJ = 25°C
10
TJ = - 40C
0
4
5
6
7
8
9 10 11 12 13 14 15
VGE - Volts
© 2000 IXYS All rights reserved
BV / VGE(th) - Normalized
VCE = 10V
1.2
1.1
VGE(th)
IC = 4mA
1.0
0.9
BVCES
IC = 3mA
0.8
0.7
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXSH 35N100A
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
2000
2000
Eoff
1500
15
tfi
1250
10
1000
10
20
30
40
50
60
Eoff - millijoules
20
tfi - nanoseconds
IC = 35A
1750
0
18
TJ = 125°C
5
70
1750
1500
16
tfi
1250
15
1000
0
10
20
IC - Amperes
40
14
50
Fig.10 Turn-Off Safe Operating Area
100
IC = 35A
TJ = 125°C
VCE = 500V
12
RG = 2.7W
10
IC - Amperes
VGE - Volts
30
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
17
Eoff
Eoff - millijoules
RG = 10W
tfi - nanoseconds
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
25
TJ = 125°C
IXSM 35N100A
9
6
dV/dt < 5V/ns
1
0.1
3
0
0.01
0
50
100
150
200
0
200
Qg - nanocoulombs
400
600
800
1000
VCE - Volts
Fig.11 Transient Thermal Impedance
1
ZthJC - K/W
D=0.5
0.1 D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4