IXSN 55N120AU1 High Voltage IGBT with Diode Short Circuit SOA Capability VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2 Preliminary data 4 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES VGEM 1 Maximum Ratings 1200 1200 V A Continuous Transient ±20 ±30 V V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1 ms 110 55 160 A A A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 110 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive 10 ms PC PD TC = 25°C IGBT Diode VISOL 50/60 Hz IISOL £ 1 mA t = 1 min t=1s TJ TJM Tstg Md Mounting torque Terminal connection torque (M4) Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 4 3 Features 500 175 W W 2500 3000 V~ V~ -55 ... +150 150 -55 ... +150 °C °C °C 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 1200 4 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 8 mA, VGE = 0 V = 8 mA, VCE = VGE miniBLOC, SOT-227 B 8 V V 1 16 mA mA ±200 nA 4 V • International standard package miniBLOC (ISOTOP) compatible • Aluminium-nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Low VCE(sat) - for minimum on-state conduction losses • Fast Recovery Epitaxial Diode - short trr and IRM • Low collector-to-case capacitance (< 60 pF) - reduces RFI • Low package inductance (< 10 nH) - easy to drive and to protect Applications • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Space savings • Easy to mount with 2 screws • High power density 92520E(12/96) 1-2 IXSN 55N120AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IC(on) VCE = 10 V, VGE = 15 V 32 C ies S 340 A 8000 pF 590 pF C res 90 pF Qg 300 nC Dim. 80 nC 140 nC A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 45 miniBLOC, SOT-227 B IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc M4 screws (4x) supplied Millimeter Min. Max. Inches Min. Max. td(on) Inductive load, TJ = 25°C 140 ns 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 t ri IC = IC90, VGE = 15 V, VCE = 0.8 • VCES, RG = 2.7 W E F 220 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 400 ns J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) 700 1000 ns 18 mJ 140 ns t ri Inductive load, TJ = 125°C 250 ns td(off) IC = IC90, VGE = 15 V, VCE = 0.8 • VCES, RG = 2.7 W 600 ns 900 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 950 ns 6 mJ 25 mJ tfi tc Eon Eoff RthJC 0.25 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 32 300 40 2.55 V 36 A ns ns 60 0.71 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2