IXYS IXSN55N120AU1

IXSN 55N120AU1
High Voltage
IGBT with Diode
Short Circuit SOA Capability
VCES
= 1200 V
IC25
= 110 A
VCE(sat) =
4V
3
2
Preliminary data
4
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
1
Maximum Ratings
1200
1200
V
A
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
110
55
160
A
A
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 110
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
10
ms
PC
PD
TC = 25°C
IGBT
Diode
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
TJ
TJM
Tstg
Md
Mounting torque
Terminal connection torque (M4)
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
4
3
Features
500
175
W
W
2500
3000
V~
V~
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
1200
4
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1
2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 8 mA, VGE = 0 V
= 8 mA, VCE = VGE
miniBLOC, SOT-227 B
8
V
V
1
16
mA
mA
±200
nA
4
V
• International standard package
miniBLOC (ISOTOP) compatible
• Aluminium-nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Low VCE(sat)
- for minimum on-state conduction
losses
• Fast Recovery Epitaxial Diode
- short trr and IRM
• Low collector-to-case capacitance
(< 60 pF)
- reduces RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
92520E(12/96)
1-2
IXSN 55N120AU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VCE = 10 V, VGE = 15 V
32
C ies
S
340
A
8000
pF
590
pF
C res
90
pF
Qg
300
nC
Dim.
80
nC
140
nC
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
45
miniBLOC, SOT-227 B
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
M4 screws (4x) supplied
Millimeter
Min.
Max.
Inches
Min.
Max.
td(on)
Inductive load, TJ = 25°C
140
ns
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
t ri
IC = IC90, VGE = 15 V,
VCE = 0.8 • VCES, RG = 2.7 W
E
F
220
ns
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
400
ns
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
td(off)
tfi
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
td(on)
700
1000
ns
18
mJ
140
ns
t ri
Inductive load, TJ = 125°C
250
ns
td(off)
IC = IC90, VGE = 15 V,
VCE = 0.8 • VCES, RG = 2.7 W
600
ns
900
ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
950
ns
6
mJ
25
mJ
tfi
tc
Eon
Eoff
RthJC
0.25 K/W
RthCK
0.05
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = IC90, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms
VR = 540 V
TJ = 100°C
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
RthJC
© 2000 IXYS All rights reserved
K/W
32
300
40
2.55
V
36
A
ns
ns
60
0.71 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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