Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE(sat) tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 80 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 170 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 50/60 Hz, RMS V A V ns Maximum Ratings VCES VISOL = 600 = 70 = 2.2 = 120 t = 1 min leads-to housing 2500 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight V~ 300 °C 5 g ISOPLUS 247TM E 153432 G G = Gate, E = Emitter C E Isolated backside* C = Collector, * Patent pending Features • • • • • DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 1 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 150°C = IT, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 7 V 650 5 mA mA ±100 nA 2.2 V • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • Easy assembly • High power density • Very fast switching speeds for high frequency applications 98672 (07/00) 1-2 IXSR 40N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC= IT; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C iss VGS = 0 V, VDS = 25 V, f = 1 MHz 16 23 S 3700 pF 440 pF C rss 60 pF Qg 190 nC 45 nC 88 nC Coss Qge IC = IT, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C 50 ns t ri IC = IT, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W 50 ns td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi Eoff td(on) Inductive load, TJ = 125°C t ri IC = IT, VGE = 15 V, L = 100 mH Eon VCE = 0.8 VCES, RG = 2.7 W td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi Eoff 110 200 ns 120 200 ns 1.8 2.6 mJ 50 ns 50 ns 2.2 mJ 190 ns 180 ns 2.6 mJ RthJC 0.73 K/W RthCK 0.15 Reverse Diode (FRED) Test Conditions VF IF = IT, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IT, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V RthJC 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R S T U Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol IRM t rr ISOPLUS 247 (IXSR) OUTLINE 2 35 1.8 V 2.5 A ns 1.15 K/W Note: 1. IT = 40A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2