High Voltage IGBT with Diode IXSK35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE(sat) Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 35 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 70 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 300 190 W W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C IGBT Diode TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.15/13 Weight Nm/lb.in. 10 g TO-264 AA C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features • International standard package JEDEC TO-264 AA • High frequency IGBT and anti-parallel FRED in one package • 2nd generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions BVCES IC = 5 mA, VGE = 0 V 1200 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 8 • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 750 15 mA mA ±100 nA 4 V Advantages • Space savings (two devices in one package) • Easy to mount with one screw (isolated mounting screw hole) • High power density 94526F(7/00) 1-2 IXSK35N120AU1 Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = IC90; VCE = 10 V, 20 26 S 170 A 3900 pF 295 pF C res 60 pF Qg 150 TO-264 AA Outline Pulse test, t £ 300 ms, duty cycle £ 2 % IC(on) VGE = 15 V, VCE = 10 V C ies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W tfi Eoff Note 1 td(on) Inductive load, TJ = 125°C t ri 190 nC 40 60 nC 70 100 nC 80 ns 150 ns 400 900 ns 500 700 ns 10 mJ 80 ns ns Eon IC = IC90, VGE = 15 V, L = 100 mH 150 8 mJ td(off) VCE = 0.8 VCES, RG = 2.7 W 400 ns tfi Eoff Note 1 700 ns 15 mJ RthJC Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 0.42 K/W RthCK 0.15 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC K/W 32 225 40 2.35 V 36 A ns ns 60 0.65 K/W IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data sheet, Publication No. D96001DE, pages 66 - 67. © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2