IXTK 33N50 High Current MegaMOSTMFET VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω N-Channel Enhancement Mode Preliminary data TO-264 AA Symbol Test conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C IDM PD T Maximum ratings 33 A T C = 25°C, pulse width limited by TJM 132 A T C = 25°C 416 W J -55 ... +150 °C 150 °C -55 ... +150 °C TJM T stg Md Mounting torque Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Test Conditions VGS = 0 V, ID = 5 mA IDSS VDS = 0.8 VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 °C Typ. Max. V 2.0 %/K 4.0 -0.25 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 300 0.087 VGS(th) temperature coefficient VGS = ±20 V DC, VDS = 0 g 500 VDS = VGS, ID = 250 µA IGSS 10 Characteristic Values Min. BVDSS temperature coefficient VGS(th) S G = Gate S = Source D = Drain TAB = Drain Features (T J = 25°C unless otherwise specified) VDSS D 1.13/10 Nm/lb.in. Weight Symbol D (TAB) G V %/K ±100 nA 200 3 µA mA 0.17 Ω • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Uninterruptable Power Supplies (UPS) • Switch-mode and resonant-mode Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density 95513C (4/97) 1-4 IXTK 33N50 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz 24 S 4900 pF 690 pF C rss 300 pF t d(on) 53 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 Ω (External) tf 30 ns 140 ns 40 ns 250 nC 30 nC 115 nC TO-264 AA Outline Dim. Q g(on) Q gs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Q gd 0.30 K/W R thJC 0.15 R thCK Source-Drain Diode Symbol Test Conditions IS VGS= 0 V ISM VSD K/W Ratings and Characteristics (T J = 25°C unless otherwise specified) Min. Typ. Max. 33 A Repetitive; pulse width limited by TJM 132 A IF = IS, VGS = 0 V, 1.5 V A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V © 2000 IXYS All rights reserved 850 ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTK 33N50 50 TJ = 25°C VGS = 10 V 9V 8V 70 ID - Amperes 50 6V 40 30 20 TJ = 125°C VGS = 10 V 9V 8V 7V 40 7V 60 ID - Amperes 80 6V 30 20 5V 10 5V 10 0 0 0 4 8 12 16 0 20 4 8 Figure 1. Output Characteristics at 25OC 20 Figure 2. Output Characteristics at 125OC 5.5 VGS = 10 V VGS = 10 V 5.0 RDS(ON) - Normalized RDS(ON) - Normalized 16 VDS - Volts VDS - Volts 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 12 TJ = 125°C TJ = 25°C 4.5 ID = 33 A 4.0 3.5 3.0 2.5 ID = 16.5 A 2.0 1.5 0 10 20 30 40 50 60 70 1.0 25 80 50 ID - Amperes 75 100 125 150 TJ - Degrees C O Figure 4. RDS(on) normalized to 16.5A/25OC vs. TJ Figure 3. RDS(on) normalized to 16.5A/25 C vs. ID 40 50 35 40 ID - Amperes ID - Amperes 30 25 20 15 30 20 TJ = 125oC 10 10 5 0 -50 TJ = 25oC -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0 2 3 4 5 6 7 8 VGS - Volts Figure 6. Admittance Curves 3-4 IXTK 33N50 14 4500 Capacitance - pF VGS - Volts 10 F=1 1MHz MHz 4000 V Vds=300V ds = 300 V = 33 A ID=30A = 10 mA IG=10mA 12 8 6 4 2 Ciss 3500 3000 2500 2000 Coss 1500 1000 Crss 500 0 0 0 50 100 150 200 250 300 0 5 10 Gate Charge - nC 15 20 25 VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 100 1 00 ID - Amperes ID - Amperes 80 60 TJ = 125°C 40 1 ms 10 10 ms 100 ms TC = 25°C 1 DC 20 TJ = 25°C 0 0.4 0. 1 0.6 0.8 1.0 1.2 10 1 00 VSD - Volts 500 VDS - Volts Figure 9. Source Current vs. Source-toDrain Voltage Figure 10. Forward Biased SOA R(th)JC - K/W 1.00 0.10 Single Pulse 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4