ADVANCE TECHNICAL INFORMATION HiPerFETTM IXTJ 36N20 VDSS = 200 ID25 = RDS(on) = N-Channel Enhancement Mode V 36 A Ω 70 mΩ trr < 200 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 36 A 144 A 36 A 19 mJ 5 V/ns W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. 5 Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s D é S 300 TJ G g (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • International standard package JEDEC TO-247 AD • Low R HDMOS process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times TM DS (on) °C 300 Applications • Switch-mode and resonant-mode Symbol Test Conditions VDSS V GS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 18A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 TJ = 25°C TJ = 125°C V power supplies • Motor controls • Uninterruptible Power Supplies (UPS) • DC choppers 4 V ±100 nA Advantages 25 250 µA µA • Easy to mount with 1 screw 70 mΩ (isolated mounting screw hole) • Space savings • High power density 98859 9/01 IXFJ 36N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz Crss 12 22 S 2970 pF 530 pF 180 pF 29 td(on) ns tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 130 ns td(off) RG = 2 Ω (External) 110 ns 98 ns 106 140 nC tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 24 40 nC 43 74 nC 0.65 K/W RthJC 0.24 RthCK Source-Drain Diode Leaded TO-268 Package Outline K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ = 25°C TJ = 125°C 36 A 144 A 1.8 V 200 350 ns ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025