IXTH 13N110 VDSS MegaMOSTMFET ID25 RDS(on) = 1100 V = 13 A = 0.92 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 52 A PD TC = 25°C 360 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Mounting torque TO-247 AD D (TAB) G = Gate, S = Source, 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C Features l l l l Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1100 V 2 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved D = Drain, TAB = Drain 0.80 4.5 V ±100 nA 500 3 µA mA 0.92 Ω International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 92781F (3/98) 1-2 IXTH 13N110 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 6.5 A, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) 10 S 5650 pF 400 pF 150 pF 24 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 21 ns td(off) RG = 1 Ω, (External) 80 ns 36 ns 195 nC 28 nC 85 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 0.35 R thCK 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 13 A ISM Repetitive; pulse width limited by TJM 52 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V © 2000 IXYS All rights reserved 850 TO-247 AD Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2