ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET VDSS = 100 V = 72 A ID25 Ω RDS(on) = 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 72 A IDM TC = 25°C, pulse width limited by TJM 300 A PD TC = 25°C 230 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque ISOPLUS 220TM G D S G = Gate, S = Source Isolated back surface* D = Drain, * Patent pending 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 2 g 300 °C Features l l l l l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = 250 µA 100 VGS(th) V DS = VGS, ID = 250 µA 2 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 VDSS VGS = 0 V RDS(on) V 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 µA mA V GS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.020 © 2002 IXYS All rights reserved l l l l Advantages l l Ω Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 98881 (1/2) IXTC 75N10 Symbol Test Conditions gfs V DS = 10 V; ID = IT, pulse test Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 25 Ciss S 4500 pF 1300 pF Crss 550 pF td(on) 40 Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 30 tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 2 Ω, (External) 60 ns 60 110 ns 100 140 ns 30 60 ns 180 260 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT 30 Qgd 70 nC 90 160 nC 0.54 K/W RthJC 0.30 RthCK Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM ISOPLUS220 OUTLINE K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 75 A Repetitive; pulse width limited by TJM 300 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.75 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source ns Note: 1. IT = 37.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1