IXYS IXTP75N10P

Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 75N10P
IXTA 75N10P
IXTP 75N10P
VDSS
ID25
= 100 V
= 75 A
Ω
= 25 mΩ
RDS(on)
N-Channel Enhancement Mode
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
100
100
V
V
±20
V
75
200
A
A
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
50
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
G
D
(TAB)
S
TO-220 (IXTP)
G
(TAB)
D S
TO-263 (IXTA)
TJ ≤ 150°C, RG = 10 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Md
Mounting torque
Weight
TO-3P
TO-220
TO-263
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
5.5
4
3
g
g
g
G
(TAB)
G = Gate
S = Source
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
D = Drain
TAB = Drain
Features
z
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
S
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
V
z
TJ = 125°C
21
5.0
V
±100
nA
25
250
µA
µA
25
mΩ
z
z
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99158(03/04)
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
20
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
28
S
2250
pF
890
pF
275
pF
td(on)
27
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
53
ns
td(off)
RG = 10 Ω (External)
66
ns
tf
45
ns
Qg(on)
74
nC
18
nC
40
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgs
Qgd
RthJC
RthCK
0.42 K/W
(TO-3P)
(TO-220)
Source-Drain Diode
0.21
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
75
A
ISM
Repetitive
200
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 75 V
QRM
TO-3P (IXTQ) Outline
120
ns
1.4
µC
TO-220 (IXTA) Outline
TO-263 (IXTP) Outline
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
Pins:
1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25º C
80
120
VGS = 10V
70
110
9V
60
90
50
I D - Amperes
I D - Amperes
VGS = 10V
100
8V
40
30
7V
20
9V
80
70
60
8V
50
40
30
7V
20
10
10
6V
0
6V
0
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
0
1
2
3
Fig. 3. Output Characteristics
@ 125ºC
6
7
8
9
10 11 12
2.2
VGS = 10V
70
R D S ( o n ) - Normalized
50
8V
40
30
7V
20
6V
10
0
0.5
1
1.5
2
2.5
1.6
I D = 75A
1.4
I D = 37.5A
1.2
1
0.6
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
V D S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
2.8
2.6
1.8
0.8
5V
0
VGS = 10V
2
9V
60
I D - Amperes
5
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
80
80
VGS = 10V
150
70
2.4
60
2.2
I D - Amperes
R D S ( o n ) - Normalized
4
V D S - Volts
V D S - Volts
TJ = 125ºC
2
1.8
1.6
1.4
50
40
30
20
1.2
10
TJ = 25ºC
1
0
0.8
0
20
40
60
I D - Amperes
© 2004 IXYS All rights reserved
80
100
120
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
120
40
36
105
32
g f s - Siemens
I D - Amperes
90
75
60
45
30
28
TJ = -40ºC
24
25ºC
125ºC
20
16
12
TJ = 125ºC
8
25ºC
-40ºC
4
15
0
0
5
6
7
8
9
10
11
0
20
40
60
V G S - Volts
100
120
200
10
180
9
VDS = 50V
160
8
I D = 37.5A
140
7
I G = 10mA
120
100
80
TJ = 125ºC
160
180
70
80
6
5
4
3
40
2
TJ = 25ºC
20
1
0
0
0.5
0.7
0.9
1.1
V S D - Volts
1.3
1.5
1.7
0
10
20
30
40
50
60
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TJ = 150ºC
R DS(on) Limit
TC = 25ºC
C iss
I D - Amperes
Capacitance - picoFarads
140
Fig. 10. Gate Charge
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
60
80
I D - Amperes
C oss
1000
100
25µs
100µs
1ms
10ms
10
DC
C rss
100
1
0
5
10
15
20
25
V D S - Volts
30
35
40
1
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0.45
0.40
R ( t h ) J C - ºC / W
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
10
100
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
1000