Advanced Technical Information PolarHTTM Power MOSFET IXTQ 75N10P IXTA 75N10P IXTP 75N10P VDSS ID25 = 100 V = 75 A Ω = 25 mΩ RDS(on) N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 100 100 V V ±20 V 75 200 A A ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR TC = 25°C 50 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C G D (TAB) S TO-220 (IXTP) G (TAB) D S TO-263 (IXTA) TJ ≤ 150°C, RG = 10 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) 1.13/10 Nm/lb.in. 5.5 4 3 g g g G (TAB) G = Gate S = Source Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved D = Drain TAB = Drain Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages V z TJ = 125°C 21 5.0 V ±100 nA 25 250 µA µA 25 mΩ z z Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99158(03/04) IXTA 75N10P IXTP 75N10P IXTQ 75N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 28 S 2250 pF 890 pF 275 pF td(on) 27 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 53 ns td(off) RG = 10 Ω (External) 66 ns tf 45 ns Qg(on) 74 nC 18 nC 40 nC VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC RthCK 0.42 K/W (TO-3P) (TO-220) Source-Drain Diode 0.21 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 75 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 75 V QRM TO-3P (IXTQ) Outline 120 ns 1.4 µC TO-220 (IXTA) Outline TO-263 (IXTP) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25º C 80 120 VGS = 10V 70 110 9V 60 90 50 I D - Amperes I D - Amperes VGS = 10V 100 8V 40 30 7V 20 9V 80 70 60 8V 50 40 30 7V 20 10 10 6V 0 6V 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 0 1 2 3 Fig. 3. Output Characteristics @ 125ºC 6 7 8 9 10 11 12 2.2 VGS = 10V 70 R D S ( o n ) - Normalized 50 8V 40 30 7V 20 6V 10 0 0.5 1 1.5 2 2.5 1.6 I D = 75A 1.4 I D = 37.5A 1.2 1 0.6 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 V D S - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.8 2.6 1.8 0.8 5V 0 VGS = 10V 2 9V 60 I D - Amperes 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 80 80 VGS = 10V 150 70 2.4 60 2.2 I D - Amperes R D S ( o n ) - Normalized 4 V D S - Volts V D S - Volts TJ = 125ºC 2 1.8 1.6 1.4 50 40 30 20 1.2 10 TJ = 25ºC 1 0 0.8 0 20 40 60 I D - Amperes © 2004 IXYS All rights reserved 80 100 120 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 40 36 105 32 g f s - Siemens I D - Amperes 90 75 60 45 30 28 TJ = -40ºC 24 25ºC 125ºC 20 16 12 TJ = 125ºC 8 25ºC -40ºC 4 15 0 0 5 6 7 8 9 10 11 0 20 40 60 V G S - Volts 100 120 200 10 180 9 VDS = 50V 160 8 I D = 37.5A 140 7 I G = 10mA 120 100 80 TJ = 125ºC 160 180 70 80 6 5 4 3 40 2 TJ = 25ºC 20 1 0 0 0.5 0.7 0.9 1.1 V S D - Volts 1.3 1.5 1.7 0 10 20 30 40 50 60 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 150ºC R DS(on) Limit TC = 25ºC C iss I D - Amperes Capacitance - picoFarads 140 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 80 I D - Amperes C oss 1000 100 25µs 100µs 1ms 10ms 10 DC C rss 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 1 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 0.45 0.40 R ( t h ) J C - ºC / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000