IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 75 A IDM TC = 25°C, pulse width limited by TJM 300 A IAR TC = 25°C 75 A EAR TC = 25°C 60 mJ EAS TC = 25°C 1.5 J dv/dt Maximum Ratings IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 (TAB) TO-268 (IXTT) G 5 V/ns 330 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C z 1.13/10 Nm/lb.in. z TJ ≤ 150°C, RG = 2 Ω PD TO-247 AD (IXTH) 6 4 g g G = Gate S = Source Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 150 VGS(th) V DS = VGS, ID = 250µA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 25 250 µA µA V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 23 mΩ © 2004 IXYS All rights reserved (TAB) S D = Drain TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS98948C(05/04) IXTH 75N15 IXTT 75N15 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test 34 45 S 5400 pF 1100 pF Crss 420 pF td(on) 24 ns Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 ns td(off) RG = 2 Ω (External) 70 ns 17 ns 210 nC 45 nC 90 nC tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.35 (TO-247) 0.21 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 75 A ISM Repetitive 300 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V Trr IF = 25A -di/dt = 100 A/µs VR = 100V QRM 150 ns 2.0 µC TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXTH 75N15 IXTT 75N15 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 200 80 VGS = 10V 8V 7V 70 160 60 140 I D - Amperes I D - Amperes VGS = 10V 9V 8V 180 50 40 6V 30 7V 120 100 80 60 20 6V 40 10 20 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C 80 6 7 8 9 10 2.2 VGS = 10V 2 R D S (on) - Normalized I D - Amperes 60 5 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 9V 8V 7V 70 4 V D S - Volts V D S - Volts 50 6V 40 30 20 1.8 1.6 I D = 75A 1.4 I D = 37.5A 1.2 1 5V 10 0.8 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 V D S - Volts 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 80 VGS = 10V 70 1.8 TJ = 125ºC 1.6 60 I D - Amperes R D S (on) - Normalized 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID 2 0 1.4 1.2 TJ = 25ºC 1 50 40 30 20 10 0.8 0 0 20 40 60 80 100 120 140 160 180 200 I D - Amperes © 2004 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 75N15 IXTT 75N15 Fig. 8. Transconductance Fig. 7. Input Adm ittance 180 80 160 70 60 120 g f s - Siemens I D - Amperes 140 100 80 60 TJ = 125ºC 25ºC -40ºC 40 20 50 TJ = -40ºC 25ºC 125ºC 40 30 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 0 30 60 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 120 150 180 Fig. 10. Gate Charge 200 10 180 9 160 8 140 7 VG S - Volts I S - Amperes 90 I D - Amperes 120 100 80 VDS = 75V I D = 37.5A I G = 10mA 6 5 4 3 60 TJ = 125ºC 40 2 TJ = 25ºC 20 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 180 Q G - nanoCoulombs V S D - Volts Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz 25µs C iss I D - Amperes Capacitance - pF R DS(on) Limit 1000 C oss 100µs 100 1ms 10ms 10 DC C rss TJ = 150ºC TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 1 V D S - Volts 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXTH 75N15 IXTT 75N15 Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce R (th) J C - (ºC/W) 1. 0 0 0. 1 0 0. 0 1 1 © 2004 IXYS All rights reserved 10 Puls e W idth - millis ec onds 10 0 10 0 0