PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C dv/dt PD Maximum Ratings 600 V 600 V V V 4 10 A A 4 15 150 A mJ mJ IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 30 Ω 10 V/ns TC = 25°C 89 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD Md Weight ±30 ±40 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 G S (TAB) TO-220 (IXTP) G (TAB) D S TO-251 (IXTU) G D S (TAB) TO-252 (IXTY) G S (TAB) G = Gate S = Source Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. Features BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 100μA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V V z RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 5.5 V ±100 nA 1 50 μA μA 2.0 Ω z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z © 2006 IXYS All rights reserved D = Drain TAB = Drain Easy to mount Space savings High power density DS99423E(04/06) IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 2.8 4.6 S 635 pF 65 pF Crss 5.7 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 10 ns td(off) RG = 30 Ω (External) 50 ns 20 ns 13.0 nC 6.0 nC 4.0 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-263 (IXTA) Outline 1.41°C/W (TO-220) °C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 4 A ISM Repetitive 12 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 4 A -di/dt = 100 A/μs 500 TO-220 (IXTP) Outline ns TO-251 (IXTU) Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 .086 0.35 .094 .045 b b1 b2 0.64 0.76 5.21 0.89 1.14 5.46 .025 .030 .205 .035 .045 .215 c c1 0.46 0.46 0.58 0.58 .018 .018 .023 .023 D 5.97 6.22 .235 .245 E e e1 6.35 2.28 4.57 6.73 BSC BSC .250 .090 .180 .265 BSC BSC H 17.02 17.78 .670 .700 L L1 L2 8.89 1.91 0.89 9.65 2.28 1.27 .350 .075 .035 .380 .090 .050 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25º C 4 8 VGS = 10V 3.5 8V 3 8V 6 7V 2.5 I D - Amperes I D - Amperes VGS = 10V 7 2 1.5 1 5 7V 4 3 2 6V 0.5 1 0 6V 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125º C 4 3.1 VGS = 10V 3.5 RD S ( o n ) - Normalized 2.5 6V 2 VGS = 10V 2.8 8V 7V 3 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 1.5 1 0.5 2.5 2.2 1.9 I D = 4A 1.6 1.3 I D = 2A 1 0.7 5V 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 4.5 3 VGS = 10V 2.8 4 TJ = 125º C 2.6 3.5 2.4 I D - Amperes RD S ( o n ) - Normalized 12 2.2 2 1.8 1.6 3 2.5 2 1.5 1.4 1 1.2 TJ = 25º C 0.5 1 0.8 0 0 1 2 3 4 5 I D - Amperes © 2006 IXYS All rights reserved 6 7 8 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P Fig. 8. Transconductance 6 10 5.4 9 4.8 8 4.2 7 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 3.6 3 2.4 TJ =125º C 1.8 TJ = -40º C 25º C 6 125º C 5 4 3 25º C 1.2 2 -40º C 0.6 1 0 0 4 4.5 5 5.5 6 6.5 7 7.5 0 1 2 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 4 5 6 7 12 14 Fig. 10. Gate Charge 14 10 12 VG S - Volts 10 I S - Amperes 3 I D - Amperes 8 6 TJ = 125º C 9 VDS = 300V 8 I D = 2A 7 I G = 10mA 6 5 4 3 4 TJ = 25º C 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 V S D - Volts 6 8 10 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10000 10.00 C iss 1000 R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz C oss 100 C rss 10 1 1.00 0.10 0.01 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.1 1 10 100 Pulse Width - milliseconds 1000 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 10.0 1.0 0.1 0.1 1 10 100 Pulse Width - milliseconds TO-252 AA (IXTY) Outline Dim. © 2006 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC 1000