PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS(on) = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient ± 30 ± 40 ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C dv/dt PD Maximum Ratings 600 V 600 V V V 2 4 A A 2 10 150 A mJ mJ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 50 Ω 10 V/ns TC = 25° C 55 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-252 G (TAB) D S TO-252 AA (IXTY) G TJ TJM Tstg TL TSOLD TO-220 (IXTP) (TO-220) S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.13/10 Nm/lb.in. 4 0.8 g g Features l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 25 µA 600 VGS(th) VDS = VGS, ID = 250 µA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V 5.0 V ±50 nA 1 50 µA µA 5.1 Ω l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99422E(04/06) IXTP 2N60P IXTY 2N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 1.4 2.2 S 240 pF 28 pF Crss 3.5 pF td(on) 28 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 20 ns td(off) RG = 50 Ω (External) 60 ns tf 23 ns Qg(on) 7.0 nC 2.5 nC 2.1 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 2.25° C/W (TO-220) Source-Drain Diode ° C/W 0.25 Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 2 A ISM Repetitive 6 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 2 A -di/dt = 100 A/µs 400 TO-252 AA (IXTY) Outline ns Pins: 1 - Gate 4 - Drain Dim. Millimeter Min. Max. 3 - Source Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTP 2N60P IXTY 2N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 2 3.6 VGS = 10V 1.8 1.6 7V I D - Amperes I D - Amperes 1.2 1 0.8 0.6 2 1.6 1.2 0.2 0.4 0 0 2 4 6 8 10 7V 2.4 0.8 6V 0.4 8V 2.8 1.4 0 VGS = 10V 3.2 8V 6V 0 12 3 6 9 Fig. 3. Output Characteristics 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 3.4 2 VGS = 10V 1.8 3.1 R D S ( o n ) - Normalized 8V 7V 1.6 I D - Amperes 15 V D S - Volts V D S - Volts 1.4 1.2 1 6V 0.8 0.6 0.4 0.2 VGS = 10V 2.8 2.5 2.2 1.9 I D = 2A 1.6 1.3 I D = 1A 1 0.7 5V 0.4 0 0 4 8 12 16 20 -50 24 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.2 3 2.8 2 VGS = 10V 1.8 2.6 TJ = 125º C 2.4 1.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 1.4 1.2 0.4 TJ = 25º C 1 0.2 0 0.8 0 0.5 1 1.5 2 I D - Amperes © 2006 IXYS All rights reserved 2.5 3 3.5 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTP 2N60P IXTY 2N60P Fig. 7. Input Adm ittance Fig. 8. Transconductance 3.6 4 3.2 3.6 3.2 g f s - Siemens 2.8 I D - Amperes 2.4 2 1.6 1.2 TJ =125º C 0.8 25º C 2.8 25º C 2.4 125º C 2 1.6 1.2 0.8 -40º C 0.4 0.4 0 0 4 4.5 5 TJ = -40º C 5.5 6 6.5 7 0 7.5 0.4 0.8 1.2 V G S - Volts 2 2.4 2.8 3.2 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 7 6 VG S - Volts 5 I S - Amperes 1.6 4 3 TJ = 125º C 9 VDS = 300V 8 I D = 1A 7 I G = 10mA 6 5 4 3 2 2 TJ = 25º C 1 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 1 1 2 V S D - Volts 3 4 5 6 7 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10.0 1000 C iss 100 R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz C oss 10 1.0 C rss 1 0.1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 100 Pulse Width - milliseconds 1000