PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS(on) ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 7 14 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 7 20 400 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω 10 V/ns PD TC = 25° C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 (TO-220) TO-220 (IXTP) G TO-263 (IXTA) G G = Gate S = Source l l BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 100µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved g g Characteristic Values Min. Typ. Max. TJ = 125° C V 5.5 V ±100 nA 5 50 µA µA 1.1 Ω D = Drain TAB = Drain Features l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) S (TAB) 1.13/10 Nm/lb.in. 4 3 (TAB) D S International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99320E(03/06) IXTA 7N60P IXTP 7N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 4 Ciss 7 S 1080 pF 110 pF Crss 11 pF td(on) 20 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns td(off) RG = 18 Ω (External) 65 ns 26 ns tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 20 nC 7 nC 7 nC Pins: 1 - Gate 2 - Drain 0.83 ° C/W RthJC RthCS TO-220 (IXTP) Outline (TO-220) ° C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 7 A ISM Repetitive 14 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 7 A, VGS = 0 V -di/dt = 100 A/µs, VR = 100 V 500 TO-263 (IXTA) Outline ns Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 6,710,405B2 6,759,692 6,710,463 6,771,478 B2 IXTA 7N60P IXTP 7N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 7 14 VGS = 10V 6 8V 10 I D - Amperes 5 I D - Amperes VGS = 10V 12 8V 7V 4 6V 3 2 7V 8 6 6V 4 1 2 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 V D S - Volts Fig. 3. Output Characteristics 15 18 21 24 27 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 7 2.6 VGS = 10V 6 2.4 8V 7V VGS = 10V R D S ( o n ) - Normalized 2.2 5 I D - Amperes 12 V D S - Volts 6V 4 3 2 1.8 1.6 I D = 7A 1.4 I D = 3.5A 1.2 1 0.8 5V 1 2 0.6 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 Fig. 5. RDS(on) Norm alized to 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.6 8 VGS = 10V 2.4 7 2.2 TJ = 125º C 6 2 I D - Amperes R D S ( o n ) - Normalized 0 TJ - Degrees Centigrade V D S - Volts 1.8 1.6 1.4 5 4 3 2 1.2 TJ = 25º C 1 1 0.8 0 0 2 4 6 8 I D - Amperes © 2006 IXYS All rights reserved 10 12 14 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 7N60P IXTP 7N60P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 12 9 11 10 9 6 8 5 - Siemens 7 TJ =125 º C 4 fs 25 º C -40 º C 3 g I D - Amperes 8 TJ = -40 º C 25 º C 125 º C 7 6 5 4 3 2 2 1 1 0 0 4 4.5 5 5.5 6 6.5 0 7 1 2 3 5 6 7 8 9 10 18 20 22 Fig. 10. Gate Char ge 20 10 18 9 V DS = 300V 16 8 I D = 3.5A 14 7 I G = 10m A V G S - Volts I S - Amperes Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 12 10 TJ = 125 º C 8 4 I D - A mperes V G S - V olts 6 6 5 4 3 TJ = 25 º C 4 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 V S D - V olts 2 4 6 Q 8 G 10 12 14 16 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The rm al Re s is tance Fig. 11. Capacitance 1.00 10000 1000 R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z C iss 100 C oss 10 C rs s 1 0.10 0 5 10 15 20 25 30 35 40 V D S - V olts 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_7N60P (37) 03-21-06B.XLS