VDSS ID25 Standard Power MOSFET IXTH 11P50 IXTT 11P50 P-Channel Enhancement Mode Avalanche Rated RDS(on) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C -11 A IDM TC = 25°C, pulse width limited by TJ -44 A IAR TC = 25°C -11 A EAR TC = 25°C 30 mJ PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 (TO-247) = -500 V = -11 A = 0.75 Ω TO-247 AD (IXTH) D (TAB) TO-268 (IXTT) Case Style G S G = Gate S = Source D (TAB) D = Drain TAB = Drain 1.13/10 Nm/lb.in. 6 4 g g Features z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient -500 VGS(th) V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient -3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 • VDSS V GS = 0 V RDS(on) VGS = -10 V, ID = 0.5 • ID25 RDS(on) Temperature Coefficient © 2005 IXYS All rights reserved V %/K 0.054 -5.0 V %/K ±100 nA -200 -1 µA mA -0.122 TJ = 25°C TJ = 125°C z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 0.75 Ω 0.6 %/K DS94535J(01/05) IXTH 11P50 IXTT 11P50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = -10 V; ID = ID25, pulse test 5 9 S 4700 pF 430 pF Crss 135 pF td(on) 33 ns TO-247 AD Outline 1 Ciss Coss V GS = 0 V, VDS = -25 V, f = 1 MHz tr V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 4.7 Ω (External) 35 ns 35 ns 130 nC 46 nC 92 nC tf QG(on) QGS VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 QGD 0.42 RthJC RthCS (TO-247) 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 10P50 11P50 -10 -11 A A ISM Repetitive; pulse width limited by TJM 10P50 11P50 -40 -44 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % -3 V t rr IF = IS, di/dt = 100 A/µs 500 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-268 Outline ns Terminals: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 2 - Drain Tab - Drain IXTH 11P50 IXTT 11P50 Fig. 1. Output Cha ra cte ristics @ 25 De g. C Fig. 2. Ex te nde d Output Cha ra cte ristics @ 25 De g. C -12 -8 VGS= -10V -9V -8V -20 ID - Amperes -10 ID - Amperes -24 VGS= -1 0 V -9 V -8 V -7 V -6 -6 V -4 -2 -16 -12 -7V -8 -6V -4 -5 V -5V 0 0 0 -2 -4 -6 -8 0 -10 -4 -8 Fig. 3. Output Characteristics @ 125 Deg. C RDS(ON) - Normalized ID - Amperes VGS= -10V 2.2 -6 -6V -4 -2 1.9 1.6 ID = -11A 1.3 1 ID = -5.5A 0.7 -5V 0.4 0 0 -3 -6 -9 -12 -15 -50 -18 -25 V DS - Volts F ig . 5. R D S (O N ) No rm a liz e d to I D 2 5 V a lu e vs. I D 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Adm itta nce 2 .6 -18 VGS = -1 0 V -15 2 .2 1 .8 ID - Amperes RDS(ON) - Normalized -20 2.5 VGS= -10V -9V -8V -7V -8 -16 Fig. 4. RDS(ON ) Normalized to I D 25 Value vs. Junction Temperature -12 -10 -12 V D S - Volts V DS - V o lts T J =1 2 5 ° C 1 .4 1 -12 T J = -40 °C -9 2 5 °C 1 25 °C -6 -3 T J =2 5 ° C 0 .6 0 0 -5 © 2005 IXYS All rights reserved -1 0 -1 5 ID - Am pe re s -2 0 -2 5 -4 .5 -5 -5 .5 -6 -6.5 V GS - Volts -7 -7.5 IXTH 11P50 IXTT 11P50 Fig. 8. S ource Curre nt vs. S ource -ToDra in V olta ge Fig. 7. Tra nsconducta nce 25 50 T J = -4 0 °C 40 IS - Amperes Gfs - Siemens 20 T J = 2 5 °C 15 T J = 1 25 °C 10 5 30 20 T J =1 2 5 °C 10 0 T J =2 5 °C 0 0 -5 -1 0 -1 5 -2 0 ID - Am pe re s -2 5 -30 0 .5 1 2 2 .5 V SD - Volts 3 3.5 Fig. 10. Capacitance Fig. 9. Ga te Cha rge -10 10000 Capacitance - pF VDS= -250V ID = -5.5A -8 IG= -1m A V GS - Volts 1.5 -6 -4 Ciss f=1Mhz 1000 Coss -2 Crss 0 100 0 25 50 75 100 125 0 -10 Q G - nanoCoulom bs -20 VDS - Volts -30 -40 Fig. 14. M a x im um Tra nsie nt The rm a l Re sista nce R(TH)JC - (ºC/W) 1 0 .1 0.0 1 1 10 1 00 Puls e W idth - m illis ec onds 1 0 00