IXYS IXTT8P50

VDSS
ID25
Standard Power MOSFET
IXTH 11P50
IXTT 11P50
P-Channel Enhancement Mode
Avalanche Rated
RDS(on)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
-500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
-500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
-11
A
IDM
TC = 25°C, pulse width limited by TJ
-44
A
IAR
TC = 25°C
-11
A
EAR
TC = 25°C
30
mJ
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
TL
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247 AD
TO-268
(TO-247)
= -500 V
= -11 A
= 0.75 Ω
TO-247 AD (IXTH)
D
(TAB)
TO-268 (IXTT) Case Style
G
S
G = Gate
S = Source
D
(TAB)
D = Drain
TAB = Drain
1.13/10 Nm/lb.in.
6
4
g
g
Features
z
z
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
V GS = 0 V, ID = -250 µA
BVDSS Temperature Coefficient
-500
VGS(th)
V DS = VGS, ID = -250 µA
VGS(th) Temperature Coefficient
-3.0
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = 0.8 • VDSS
V GS = 0 V
RDS(on)
VGS = -10 V, ID = 0.5 • ID25
RDS(on) Temperature Coefficient
© 2005 IXYS All rights reserved
V
%/K
0.054
-5.0
V
%/K
±100
nA
-200
-1
µA
mA
-0.122
TJ = 25°C
TJ = 125°C
z
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
0.75
Ω
0.6 %/K
DS94535J(01/05)
IXTH 11P50
IXTT 11P50
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = -10 V; ID = ID25, pulse test
5
9
S
4700
pF
430
pF
Crss
135
pF
td(on)
33
ns
TO-247 AD Outline
1
Ciss
Coss
V GS = 0 V, VDS = -25 V, f = 1 MHz
tr
V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
27
ns
td(off)
RG = 4.7 Ω (External)
35
ns
35
ns
130
nC
46
nC
92
nC
tf
QG(on)
QGS
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
QGD
0.42
RthJC
RthCS
(TO-247)
0.25
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
V GS = 0
10P50
11P50
-10
-11
A
A
ISM
Repetitive; pulse width limited by TJM
10P50
11P50
-40
-44
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
-3
V
t rr
IF = IS, di/dt = 100 A/µs
500
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-268 Outline
ns
Terminals: 1 - Gate
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
2 - Drain
Tab - Drain
IXTH 11P50
IXTT 11P50
Fig. 1. Output Cha ra cte ristics
@ 25 De g. C
Fig. 2. Ex te nde d Output Cha ra cte ristics
@ 25 De g. C
-12
-8
VGS= -10V
-9V
-8V
-20
ID - Amperes
-10
ID - Amperes
-24
VGS= -1 0 V
-9 V
-8 V
-7 V
-6
-6 V
-4
-2
-16
-12
-7V
-8
-6V
-4
-5 V
-5V
0
0
0
-2
-4
-6
-8
0
-10
-4
-8
Fig. 3. Output Characteristics
@ 125 Deg. C
RDS(ON) - Normalized
ID - Amperes
VGS= -10V
2.2
-6
-6V
-4
-2
1.9
1.6
ID = -11A
1.3
1
ID = -5.5A
0.7
-5V
0.4
0
0
-3
-6
-9
-12
-15
-50
-18
-25
V DS - Volts
F ig . 5. R D S (O N ) No rm a liz e d to I D 2 5
V a lu e vs. I D
0
25
50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm itta nce
2 .6
-18
VGS = -1 0 V
-15
2 .2
1 .8
ID - Amperes
RDS(ON) - Normalized
-20
2.5
VGS= -10V
-9V
-8V
-7V
-8
-16
Fig. 4. RDS(ON ) Normalized to I D 25 Value
vs. Junction Temperature
-12
-10
-12
V D S - Volts
V DS - V o lts
T J =1 2 5 ° C
1 .4
1
-12
T J = -40 °C
-9
2 5 °C
1 25 °C
-6
-3
T J =2 5 ° C
0 .6
0
0
-5
© 2005 IXYS All rights reserved
-1 0
-1 5
ID - Am pe re s
-2 0
-2 5
-4 .5
-5
-5 .5
-6
-6.5
V GS - Volts
-7
-7.5
IXTH 11P50
IXTT 11P50
Fig. 8. S ource Curre nt vs. S ource -ToDra in V olta ge
Fig. 7. Tra nsconducta nce
25
50
T J = -4 0 °C
40
IS - Amperes
Gfs - Siemens
20
T J = 2 5 °C
15
T J = 1 25 °C
10
5
30
20
T J =1 2 5 °C
10
0
T J =2 5 °C
0
0
-5
-1 0
-1 5
-2 0
ID - Am pe re s
-2 5
-30
0 .5
1
2
2 .5
V SD - Volts
3
3.5
Fig. 10. Capacitance
Fig. 9. Ga te Cha rge
-10
10000
Capacitance - pF
VDS= -250V
ID = -5.5A
-8
IG= -1m A
V GS - Volts
1.5
-6
-4
Ciss
f=1Mhz
1000
Coss
-2
Crss
0
100
0
25
50
75
100
125
0
-10
Q G - nanoCoulom bs
-20
VDS - Volts
-30
-40
Fig. 14. M a x im um Tra nsie nt The rm a l Re sista nce
R(TH)JC - (ºC/W)
1
0 .1
0.0 1
1
10
1 00
Puls e W idth - m illis ec onds
1 0 00