IXYS IXTT96N20P

IXTH 96N20P
IXTQ 96N20P
IXTT 96N20P
PolarHTTM
Power MOSFET
VDSS
ID25
= 200 V
= 96 A
Ω
= 24 mΩ
RDS(on)
N-Channel Enhancement Mode
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
200
V
±20
V
VGSM
ID25
TC = 25°C
96
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25°C, pulse width limited by TJM
225
A
IAR
TC = 25°C
60
A
EAR
TC = 25°C
50
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
600
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-3P
TO-247
TO-268
(TO-3P, TO-247)
G
D
TO-3P (IXTQ)
G
D
g
g
g
(TAB)
S
TO-268 (IXTT)
G
1.13/10 Nm/lb.in.
5.5
6.0
5.0
(TAB)
S
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 150°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
V
5.0
V
±100
nA
25
250
µA
µA
24
mΩ
z
z
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99117D(01/05)
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
40
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
52
S
4800
pF
1020
pF
270
pF
28
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
30
ns
td(off)
RG = 4 Ω (External)
75
ns
30
ns
145
nC
30
nC
80
nC
tf
Qg(on)
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgs
Qgd
RthJC
TO-3P (IXTQ) Outline
0.25 K/W
RthCK
(TO-3P, TO-247)
Source-Drain Diode
0.21
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
96
A
ISM
Repetitive
240
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
160
ns
3.0
µC
TO-268 Outline
TO-247 AD Outline
Dim.
1
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
250
100
VGS = 10V
9V
90
80
225
200
9V
175
I D - Amperes
70
I D - Amperes
VGS = 10V
60
8V
50
40
7V
30
20
150
125
8V
100
75
7V
50
6V
10
25
0
6V
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
V D S - Volts
Fig. 3. Output Characteristics
@ 150ºC
12
14
16
18
20
3
VGS = 10V
9V
90
2.8
R D S ( o n ) - Normalized
70
8V
60
50
7V
40
30
VGS = 10V
2.6
80
I D - Amperes
10
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Te m perature
100
6V
20
2.4
2.2
2
I D = 96A
1.8
1.6
I D = 48A
1.4
1.2
1
10
0.8
5V
0
0.6
0
1
2
3
4
V D S - Volts
5
6
-50
7
-25
0.5 ID25 Value vs. ID
4.3
4
25
50
75
100
125
150
175
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
100
90
VGS = 10V
3.7
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alize d to
80
3.4
TJ = 175ºC
3.1
70
2.8
2.5
2.2
TJ = 125ºC
1.9
I D - Amperes
R D S ( o n ) - Normalized
8
V D S - Volts
60
50
40
30
1.6
20
1.3
1
TJ = 25ºC
10
0
0.7
0
25
50
75
100 125 150 175 200 225 250
I D - Amperes
© 2005 IXYS All rights reserved
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
Fig. 8. Transconductance
160
80
140
70
120
60
g f s - Siemens
I D - Amperes
Fig. 7. Input Adm ittance
100
80
60
TJ = 150ºC
25ºC
-40ºC
40
TJ = -40ºC
25ºC
150ºC
50
40
30
20
20
10
0
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
25
50
75
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
125
175
200
10
VDS = 100V
9
250
I D = 48A
8
I G = 10mA
7
VG S - Volts
200
150
100
6
5
4
3
TJ = 150ºC
50
2
TJ = 25ºC
1
0
0
0.4
0.6
0.8
1
V S D - Volts
1.2
1.4
1.6
0
15
30
45
60
75
90
105 120 135 150
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TJ = 175ºC
R DS(on) Limit
TC = 25ºC
C iss
I D - Amperes
Capacitance - picoFarads
150
Fig. 10. Gate Charge
300
I S - Amperes
100
I D - Amperes
1000
C oss
25µs
100
100µs
1ms
10ms
10
DC
C rss
100
1
0
5
10
15
20
25
V DS - Volts
30
35
40
10
100
V D S - Volts
1000
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Pu ls e W id th - m illis e c o n d s
© 2005 IXYS All rights reserved
1000