MWI 150-06 A8 Advanced Technical Information IC25 = 170 A = 600 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 IGBTs Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 1.5 W; TVJ = 125°C Clamped inductive load; L = 100 µH 600 V ± 20 V 170 115 A A ● ● ● ● ● ● ● ICM = 300 VCEK £ VCES tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 1.5 W; TVJ = 125°C non-repetitive Ptot TC = 25°C A ● ● ● 10 µs Advantages 515 W ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 150 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.0 2.3 2.5 V V ● Typical Applications ● ● VGE(th) IC = 3 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 4.5 6.5 V 1.5 mA mA 400 nA 1.1 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 150 A VGE = ±15 V; RG = 1.5 W 125 30 225 35 2.3 4.6 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 150 A 6.5 tbd nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved space savings reduced protection circuits package designed for wave soldering ● AC motor control AC servo and robot drives power supplies 0.24 K/W 147 Symbol 1-2 MWI 150-06 A8 Dimensions in mm (1 mm = 0.0394") Diodes Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 210 130 Symbol Conditions Characteristic Values min. typ. max. VF IF = 150 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.9 1.4 IRM trr IF = 150 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 37 100 RthJC (per diode) A A 2.0 V V A ns 0.41 K/W Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL £ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3-6 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight © 2000 IXYS All rights reserved Higher magnification see outlines.pdf 10 10 mW mm mm 0.01 K/W 300 g 2-2