MWI 200-06 A8 IC25 = 225 A = 600 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 600 V ± 20 V 225 155 A A ICM = 400 VCEK ≤ VCES A VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 10 µs 675 W • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 2.0 2.3 4.5 2.5 V V 6.5 V 1.8 mA mA 400 nA 1.5 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 200 A VGE = ±15 V; RG = 1.5 Ω 180 50 300 40 4.6 6.3 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 200 A 9.0 670 nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Typical Applications • AC motor control • AC servo and robot drives • power supplies 0.18 K/W 448 VCE(sat) • space savings • reduced protection circuits • package designed for wave soldering 1-4 MWI 200-06 A8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 260 165 Symbol Conditions Characteristic Values min. typ. max. VF IF = 200 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.9 1.5 IRM trr IF = 120 A; diF/dt = -1000 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 56 100 RthJC (per diode) Conduction A A 2.1 V V A ns IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.1 V; R0 = 6 mΩ Free wheeling Diode (typ. at TJ = 125°C) V0 = 1.1 V; R0 = 2 mΩ 0.3 K/W Thermal Response Module Symbol Conditions TVJ TJM Tstg operating VISOL Md Symbol Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Mounting torque (M5) 3-6 Nm Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Free wheeling Diode (typ.) Cth1 = 0.281 J/K; Rth1 = 0.236 K/W Cth2 = 1.945 J/K; Rth2 = 0.064 K/W mΩ mm mm 0.01 K/W 300 g Dimensions in mm (1 mm = 0.0394") 448 Weight 10 10 IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.131 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W © 2004 IXYS All rights reserved 2-4 MWI 200-06 A8 300 300 A 250 13 V 11 V VGE = 17 V A 15 V 250 TVJ = 25°C IC 13 V VGE = 17 V IC 15 V TVJ = 125°C 200 200 150 150 9V 9V 100 100 50 50 0 0 0 1 2 3 V 0 4 1 2 3 VCE Fig. 1 400 4 V VCE Typ. output characteristics Fig. 2 Typ. output characteristics 600 A 500 VCE = 20 V A IC 11 V IF 300 400 300 200 TVJ = 125°C 200 TVJ = 125°C 100 100 TVJ = 25°C TVJ = 25°C 0 0 6 7 8 9 10 0 11 V 12 1 Fig. 3 2 V VF VGE Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 180 15 V VCE = 300 V IC = 200 A 12 A trr trr 120 VGE IRM TVJ = 125°C VR = 300 V IF = 120 A ns 40 IRM 9 6 20 60 3 MWI200-06A8 0 0 0 100 200 300 400 500 600 nC 700 0 QG Typ. turn on gate charge 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 448 Fig. 5 200 © 2004 IXYS All rights reserved 3-4 MWI 200-06 A8 16 Eon 16 mJ VCE = 300 V VGE = ±15 V mJ VCE = 300 V VGE = ±15 V 12 RG = 1.5 Ω TVJ = 125°C Eoff 12 RG = 1.5 Ω TVJ = 125°C 8 8 4 4 0 0 0 100 200 A 300 400 0 100 200 Fig. 7 Typ. turn on energy versus collector current 400 Fig. 8 Typ. turn off energy versus collector current 20 8 VCE = 300 V VGE = ±15 V mJ Eon A 300 IC IC 16 mJ Eoff IC = 200 Α TVJ = 125°C 6 12 VCE = 300 V VGE = ±15 V 8 IC = 200 Α TVJ = 125°C 4 4 0 0 4 8 12 16 2 Ω 20 0 4 8 12 RG 16 Ω 20 RG Fig. 9 Typ. turn on energy versus gate resistor Fig.10 Typ. turn off energy versus gate resistor 500 1 A K/W 400 diode IGBT 0.1 ICM ZthJC 300 0.01 200 RG = 1.5 Ω TVJ = 125°C 100 0.001 0 0 100 200 300 400 500 600 700 V VCE MWI200-06A8 0.001 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 448 Fig. 11 Reverse biased safe operating area RBSOA 0.0001 0.0001 single pulse © 2004 IXYS All rights reserved 4-4