MKI 75-06 A7 IC25 = 90 A = 600 V VCES VCE(sat) typ. = 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Preliminary Data B3 Features IGBTs ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 600 V ± 20 V 90 60 A A ICM = 120 VCEK ≤ VCES A 10 µs 280 W VGES ● ● ● IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 18 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ● ● tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 18 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C ● ● ● Advantages ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 2.1 2.5 4.5 2.6 6.5 V 1.3 mA mA 0.9 VCE = 0 V; VGE = ± 20 V V V 200 nA Inductive load, TVJ = 125°C VCE = 300 V; IC = 75 A VGE = ±15 V; RG = 18 Ω 50 50 270 40 3.5 2.5 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 75 A 3200 190 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate ● ● space savings reduced protection circuits package designed for wave soldering Typical Applications ● ● motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger 0.44 K/W 204 Symbol 1-4 MKI 75-06 A7 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 140 85 Symbol Conditions Characteristic Values min. typ. max. VF IF = 75 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.8 1.3 IRM trr IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 28 100 RthJC (per diode) Conduction A A 2.1 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 20 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.014 V; R0 = 4 mΩ Thermal Response Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm IGBT (typ.) Cth1 = 0.248 J/K; Rth1 = 0.343 K/W Cth2 = 1.849 J/K; Rth2 = 0.097 K/W Symbol Conditions Characteristic Values min. typ. max. Free Wheeling Diode (typ.) Cth1 = 0.23 J/K; Rth1 = 0.483 K/W Cth2 = 1.3 J/K; Rth2 = 0.127 K/W Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight © 2002 IXYS All rights reserved 6 6 mΩ mm mm 0.02 K/W 180 g Dimensions in mm (1 mm = 0.0394") 2-4 B3 MKI 75-06 A7 200 IC 200 VGE= 17V 15V 13V A 160 IC 120 A 160 VGE= 17V 15V 13V 120 11V 11V 80 80 9V 40 9V 40 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 VCE V 5 0 6 Fig. 1 Typ. output characteristics 1 2 3 4 VCE 5 V 6 B3 Fig. 2 Typ. output characteristics 160 200 A A 160 120 IC TVJ = 125°C IF 120 TVJ = 25°C 80 80 TVJ = 125°C TVJ = 25°C 40 40 VCE = 20V 0 0.0 0 4 6 8 10 VGE 12 V 14 Fig. 3 Typ. transfer characteristics 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 4 Typ. forward characteristics of free wheeling diode 20 60 V 50 A 15 IRM VGE 150 ns trr trr 100 40 30 10 20 VCE = 300V IC = 75A 10 IRM MWI7506A7 0 0 0 40 80 120 160 200 nC QG Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved 240 50 TVJ = 125°C VR = 300V IF = 60A 5 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MKI 75-06 A7 10.0 mJ Eon 7.5 td(on) tr 5.0 100 5 ns mJ 75 t RG = 18Ω TVJ = 125°C 0.0 Eon 40 80 120 A t 3 td(off) 50 25 VCE = 300V VGE = ±15V 200 1 RG = 18Ω TVJ = 125°C 100 tf 0 0 160 40 80 10 Eon td(on) 5 tr VCE = 300V VGE = ±15V IC = 75A TVJ = 125°C Eon 2 0 0 10 20 30 ns mJ 80 4 t 4 40 Eoff 60 3 40 2 20 1 0 0 50 Ω 60 500 td(off) Eoff VCE = 300V VGE = ±15V IC = 75A TVJ = 125°C tf 0 10 20 30 RG ns 400 t 300 200 100 0 50 Ω 60 40 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor 160 Fig.10 Typ. turn off energy and switching times versus gate resistor 1 diode K/W A ICM B3 Fig. 8 Typ. turn off energy and switching times versus collector current 100 6 0 160 120 A IC Fig. 7 Typ. turn on energy and switching times versus collector current 8 300 2 IC mJ 400 Eoff 0 0 ns Eoff 4 VCE = 300V VGE = ±15V 2.5 500 120 0.1 ZthJC 80 0.01 40 0.001 IGBT single pulse RG = 18 Ω TVJ = 125°C 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 MWI7506A7 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 4-4