ECO-PACTM 2 IGBT Module IC25 = 18 A VCES = 1200 V VCE(sat)typ. = 2.3 V PSII 15/12* Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 15/12* K12 IGBTs Symbol VCES VGES IC25 IC80 I CM VCEK tSC (SCSOA) Ptot Symbol *NTC optional Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 18 14 V 20 VCES A VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs TC = 25°C 90 W TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Conditions V A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) ICES IC = 0.4 mA; VGE = VCE IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH VCE = 0 V; VGE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C ± = 20 V 2.3 2.7 4.5 2.7 V V 6.5 V 0.5 mA mA 200 nA 0.8 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 10 A 600 45 pF nC (per IGBT) (per IGBT) with heatsink compound 2.7 1.4 K/W K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω Features • • • • NPT IGBT’s - positive temperature coefficient of saturation voltage - fast switching FRED diodes - fast reverse recovery - low forward voltage Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate UL registered, E 148688 Applications • • AC drives power supplies with power factor correction Advantages • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSII 15/12 Diodes Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 10 A; TVJ = 25°C TVJ = 125°C 2.6 1.9 IRM trr IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 13 110 A ns RthJC RthJH (per diode) (per diode) with heatsink compound 5.0 3.5 K/W K/W 15 10 Package style and outline Dimensions in mm (1mm = 0.0394“) A A Characteristic Values min. typ. max. 3.0 V V Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Weight 11.2 11.2 mm mm 24 g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20