VUE 130-06NO7 Three Phase Rectifier Bridge IdAV = 130 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes (FRED) in ECO-PAC 2 Preliminary data sheet VRSM VRRM V V 600 600 PS16 Typ ~A 1 ~L 9 ~ K10 VUE 130-06NO7 EG 1 Pin arangement see outlines Symbol Conditions IdAV ① IdAVM TC = 85°C, module 130 130 A A IFSM TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 640 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 520 555 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1720 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1295 A2 s A2 s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ I2t Maximum Ratings TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Weight Mounting torque (M4) typ. Symbol Conditions 1.5-2/14-18 Nm/lb.in. 24 g Characteristic Values typ. Features • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers for high frequency • Battery DC power supplies • Field supply for DC motors Advantages • Space and weight savings • Improved temperature and power cycling capability • Small and light weight • Low noise switching Dimensions in mm (1 mm = 0.0394") max. IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM 0.1 2.5 mA mA VF IF = 60 A TVJ = 25°C 2.04 V VT0 rT for power-loss calculations only RthJC RthCH per diode; DC current per diode, DC current, typ. 0.8 K/W 0.2 K/W IRM 6.8 trr IF = 130 A, -diF/dt = 100 A/µs VR = 100 V, TVJ = 100°C IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C a dS dA Max. allowable acceleration creeping distance on surface (pin to heatsisnk) strike distance in air (pin to heatsisnk) 1.09 V 4.3 mΩ 35 50 11.2 9.7 A ns m/s2 mm mm IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 241 Data according to IEC 60747 refer to a single diode unless otherwise stated ① for resistive load at bridge output. 1-2 B3 VUE 130-06NO7 160 A 140 IF 4000 nC 120 60 IF = 120 A IF = 60 A IF = 30 A IRM Qr 80 TVJ = 100°C VR = 300 V A 3000 TVJ = 25°C TVJ = 100°C TVJ = 150°C 100 80 TVJ = 100°C VR = 300 V IF = 120 A IF = 60 A IF = 30 A 2000 40 60 40 1000 20 20 DWLP55-06 0 0 1 DWLP55-06 0 100 V 2 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 140 Kf 400 B3 600 A/µs 800 1000 -diF/dt 1.6 V VFR 15 110 µs VFR trr IF = 120 A IF = 60 A IF = 30 A 120 1.0 200 20 trr 1.5 0 Fig. 3 Peak reverse current IRM versus -diF/dt TVJ = 100°C VR = 300 V ns 130 DWLP55-06 0 A/µs 1000 -diF/dt tfr 1.2 TVJ = 100°C IF = 60 A 10 IRM 0.8 100 0.5 5 Qr DWLP55-06 0.0 DWLP55-06 80 0 40 0.4 90 80 120 C 160 0 200 400 600 TVJ 800 1000 A/µs -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt DWLP55-06 0 0 200 400 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 1 K/W 0.1 ZthJC 0.01 0.001 0.0001 0.00001 VUE 130-06 0.0001 0.001 0.01 s 0.1 1 t Fig. 7 Typical transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 241 NOTE: Fig. 2 to Fig. 6 shows typical values 2-2