VUE 50 VRRM = 1200 V IdAV = 50 A trr = 40 ns Three Phase Rectifier Bridge VRSM VRRM V V 1200 1200 4 5 1/2 Type VUE 50-12NO1 12 10 8 6 8 4/5 10 6 Symbol Test Conditions IdAV TK = 85°C, module IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 50 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 210 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 185 195 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 180 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 170 160 A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2 - 2.5 18-22 35 Nm lb.in. g ● ● ● ● ● VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32UNF) Weight typ. Symbol Test Conditions IR VR = VRRM VR = 0.8 VRRM TVJ = 25°C TVJ = 125°C VF IF TVJ = 25°C VT0 rT Characteristic Values typ. max 0.75 7 mA mA 2.55 V For power-loss calculations only 1.65 18.2 V mW RthJS per diode, per module, 1.5 0.25 K/W K/W IRM trr IF = 30 A, -diF/dt = 240 A/ms VR = 540 V, L £ 0.05 mH, TVJ = 100°C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 4 120° rect. 120° rect. Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ● ● TVJ TVJM Tstg = 30 A; Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Leads suitable for PC board soldering Creeping and creepage-distance fulfils UL 508/CSA 22.2NO14 and VDE 0160 requirements Epoxy meet UL94V-O UL registered E72873 16 18 A 40 60 ns 12.7 9.4 50 Applications Supplies for DC power equipment Input rectifiers for PWM inverter Output filter for PWM inverter ● ● ● Advantages Reduced EMI/RFI Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● ● ● Dimensions in mm (1 mm = 0.0394") mm mm m/s2 Use output terminals in parallel connections 1-2 VUE 50 50 60 A 70 A 60 TVJ=100°C VR= 540V A 50 40 max. IF=30A IF=60A IF=30A IF=15A 50 IRM 40 IF IdAVM TVJ= 25°C TVJ=150°C 40 30 30 30 20 typ. 20 20 10 10 10 0 0 0 0 1 2 3 V 4 0 25 50 TS VF Fig. 1 Forward current versus voltage drop per diode. 75 °C 125 0 150 Fig. 3 Typical peak reverse current versus -diF/dt. 100 V 1.2 TVJ=100°C VR=540 V µs 1.0 1.2 0.8 3000 ns 80 1.0 trr 0.8 IRM 400 A/ms 600 200 -diF/dt Fig. 2 Maximum forward current at heatsink temperature TS. 1.4 Kf 100 IF=30A IF=60A IF=30A IF=15A max. 0.6 2400 VFR VFR 60 0.6 1800 tfr 40 trr 1200 0.4 tfr 0.4 20 0.2 0.2 TVJ=125°C IF=30A typ. 0.0 0 40 TVJ 80 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. 0.0 0 200 -diF/dt 0 400 A/ms 600 0 Fig. 5 Typical recovery time versus -diF/dt. 2.0 200 - diF/dt RthSA (K/W) 0.2 0.5 1.0 1.5 2.0 4.0 6.0 250 1.5 200 ZthJS RthJSi 1.0 0.05 0.2 0.75 0.5 0.5 ti 150 0.04 0.07 0.13 0.2 0 A/ms 600 Fig. 6 Typical peak forward voltage and forward recovery time versus -diF/dt. 300 W K/W 400 600 100 50 0.0 0.001 0.01 0.1 1 s t Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 0 10 0 10 20 IdAVM 30 40 50 A 0 25 50 TA °C 150 75 100 125 Fig. 8 Power dissipation versus direct output current and ambient temperature 2-2