SEMICONDUCTOR KDR105 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE High frequency rectification (Switching regulators, converters, choppers) E B M M FEATURES Low Forward Voltage : VF max=0.55V. CHARACTERISTIC G RATING UNIT VRRM 50 V Reverse Voltage VR 50 V Average Forward Current IO 0.1 A IFSM 2 A Junction Temperature Tj 125 Storage Temperature Tstg -55 125 Non-repetitive Peak Surge Current 3 1 H L C ) SYMBOL Repetitive Peak Reverse Voltage J A 2 Low Leakage Current : IR max=10 A. MAXIMUM RATING (Ta=25 D N K DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.10 0.42 + 0.10 MIN N 3 1. NC 2. ANODE 3. CATHODE 2 1 USM Marking DL ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=50 A 50 - - V Forward Voltage VF IF=0.1A - - 0.55 V Reverse Current IR VR=25V - - 10 A Total Capacitance CT VR=10V, f=1MHz - 7.7 - pF 2003. 2. 25 Revision No : 2 1/2 KDR105 10 5 10 4 10 3 10 2 I R - VR REVERSE CURRENT I R (nA) FORWARD CURRENT I F (uA) I F - VF 10 1 0.1 0 100 200 300 400 500 600 10 3 10 2 10 0 10 20 30 40 50 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (mV) VR - C CAPACITANCE C (pF) 10 2 10 1 0 10 20 30 40 REVERSE VOLTAGE V R (V) 2003. 2. 25 Revision No : 2 2/2