SEMICONDUCTOR BAT54S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE For high speed Switching. E B L FEATURES L ・Low Forward Voltage. 3 H G A 2 D ・Low Leakage Current. 1 MAXIMUM RATING (Ta=25℃) UNIT Reverse Voltage VR 30 V Average Forward Current IO 0.2 A Non-repetitive Peak Forward Surge Current (t<1.0s) IFSM 0.6 A Repetitive Peak Forward Current IFRM 0.3 A Power Dissipation PD 0.2 W Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55～150 ℃ J RATING K SYMBOL P N CHARACTERISTIC C P DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. CATHODE 1 D2 2. ANODE 2 3. ANODE 1/CATHODE 2 2 D1 1 SOT-23 Marking Lot No. Type Name L44 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF Forward Voltage TEST CONDITION MIN. TYP. MAX. UNIT IF=1.0mA - - 0.32 V IF=10mA - - 0.40 V IF=30mA - - 0.50 V IF=100mA - - 0.80 V Reverse Current IR VR=25V - - 2 μA Total Capacitance CT VR=1V, f=1MHz - - 10 pF Reverse Recovery Time trr IR=IF=10mA - - 5 ns 2009. 2. 4 Revision No : 0 1/1