SEMICONDUCTOR KDR505S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE High frequency rectification (Switching regulators, converters, choppers) E B L L FEATURES 2 H A ) UNIT VRRM 50 V Reverse Voltage VR 50 V Average Forward Current IO 0.5 A IFSM 5 A Junction Temperature Tj 125 Storage Temperature Tstg -55 125 Repetitive Peak Reverse Voltage Non-repetitive Peak Surge Current J RATING K SYMBOL P N CHARACTERISTIC 1 P C MAXIMUM RATING (Ta=25 3 G Low Leakage Current : IR max=20 A. D Low Forward Voltage : VF max=0.55V. DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. NC 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DM ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 50 - - V Reverse Voltage VR IR=200 A Forward Voltage VF IF=0.5A - - 0.55 V Reverse Current IR VR=25V - - 20 A Total Capacitance CT VR=10V, f=1MHz - 22 - pF 2003. 2. 25 Revision No : 1 1/2 KDR505S IR - 10 10 FORWARD CURRENT I F (uA) REVERSE CURRENT I R (nA) 10 I F - VF VR 4 3 2 10 20 30 40 50 TERMINAL CAPACITANCE C T (pF) CT - 10 2 10 5 10 4 10 3 10 2 10 0 10 20 0 100 200 300 400 500 600 FORWARD VOLTAGE V F (mV) REVERSE VOLTAGE V R (V) 10 10 1 0 3 10 6 VR 30 40 REVERSE VOLTAGE V R (V) 2003. 2. 25 Revision No : 1 2/2