KEC KTA1532T

SEMICONDUCTOR
KTA1532T
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
E
FEATURES
B
K
DIM
A
B
ᴌAdoption of MBIT Processes.
1
C
3
D
D
G
ᴌHigh-Speed Switching.
2
F
A
ᴌLow Collector-to-Emitter Saturation Voltage.
G
ᴌLarge Current Capacitance.
ᴌUltrasmall Package Facilitates Miniaturization in end Products.
L
C
ᴌComplementary to KTC3532T.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
DC
IC
-1.5
A
Pulse
ICP
-3
A
IB
-300
mA
PC *
0.9
W
Tj
150
ᴱ
Tstg
-55ᴕ150
ᴱ
2.8+0.2/-0.3
_ 0.2
1.9 +
0.95
_ 0.05
0.16 +
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
I
J
MAXIMUM RATING (Ta=25ᴱ)
E
F
G
H
I
J
K
L
ᴌHigh Allowable Power Dissipation.
MILLIMETERS
_ 0.2
2.9 +
1.6+0.2/-0.1
_ 0.05
0.70 +
_ 0.1
0.4 +
J
1. EMITTER
2. BASE
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
3. COLLECTOR
TSM
Marking
Lot No.
Type Name
SB
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-12V, IE=0
-
-
-0.1
Ọ
A
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-0.1
Ọ
A
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10Ọ
A, IE=0
-20
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10ỌA, IC=0
-5
-
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-750mA, IB=-15mA
-
-120
-180
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC=-750mA, IB=-15mA
-
-0.85
-1.2
V
DC Current Gain
hFE
VCE=-2V, IC=-100mA
200
-
560
Transition Frequency
fT
VCE=-2V, IC=-300mA
-
210
-
MHz
VCB=-10V, f=1MHz
-
30
-
pF
-
50
-
-
90
-
-
15
-
Collector Output Capacitance
Turn-On Time
Cob
PW=20µs
DC <= 1%
ton
INPUT
Swiitching
Time
Storage Time
tstg
IB2
IB1
RB
50Ω
tf
RL
VR
220µF
Fall Time
OUTPUT
nS
470µF
V BE =5V
VCC =-5V
-20I B1=20IB2=IC =-750mA
2001. 6. 26
Revision No : 0
1/3
KTA1532T
h FE - I C
I C - V CE
mA
-1.4
-10mA
-1.2
-8mA
-1.0
-6mA
-0.8
-4mA
-0.6
-2mA
-0.4
-0.2
0
DC CURRENT GAIN h FE
-40
mA
A
-1.6
1K
-20mA
-30
-1.8
-50m
COLLECTOR CURRENT I C (A)
-2.0
IB=0mA
0
VCE =-2V
500
Ta=7
5 C
300
Ta=2
5 C
Ta=-2
5 C
100
50
30
-0.01
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
-0.03
-300
-100
-50
C
C C
5
=-2 25
Ta Ta=
-10
-5
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
I C /I B =20
=
Ta
-1K
I C /I B =50
-300
-100
C
75
Ta=
C
25
Ta= 5 C
2
Ta=
-50
-30
-10
-0.01
-0.03
-0.1
-3
Ta=-25 C
Ta=75 C
Ta=25 C
-0.3
-0.1
-0.3
-1
COLLECTOR CURRENT I C (A)
2001. 6. 26
Revision No : 0
-3
-3
VCE =-2V
-0.9
-0.8
-0.7
Ta=75
C
Ta=25
C
Ta=-25
C
-5
-1.0
COLLECTOR CURRENT IC (A)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
I C /I B =50
-0.03
-1
I C - V BE
-10
-0.1
-0.01
-0.3
COLLECTOR CURRENT I C (A)
VBE(sat) - I C
-0.5
-3
-500
COLLECTOR CURRENT I C (A)
-1
-1
VCE(sat) - I C
-500
75
-0.3
COLLECTOR CURRENT I C (A)
VCE(sat) - I C
-30
-0.1
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMITTER VOLTAGE V BE (V)
2/3
KTA1532T
C ob - V CB
1K
VCE =-2V
500
300
100
50
30
-0.01
-0.03
-0.1
-1
-0.3
COLLECTOR OUTPUT CAPACITANCE
C ob (pF)
TRANSITION FREQUENCY f T (MHz)
fT - IC
100
f=1MHz
50
30
10
5
3
-3
-1
-3
SAFE OPERATING AREA
-0.03
COLLECTOR POWER DISSIPATION
PC (W)
-0.05
0m
AT
-0.3
-0.1
10
OP
1m
S*
S*
S*
ER
-0.5
m
*
10
S*
0µ
DC
S
0µ
-1
50
COLLECTOR CURRENT I C (A)
I C MAX.(PULSED)
I C MAX
(CONTINUOUS)
IO
N
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm 2 `0.8mm)
-0.01
-0.1
-0.3
-1
-3
-30
Pc - Ta
10
-3
-10
COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR CURRENT I C (A)
-5
-5
-10
-30
1.4
MOUNTED ON A
CERAMIC BOARD
(600mm 2 `0.8mm)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V CE (V)
2001. 6. 26
Revision No : 0
3/3
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