SEMICONDUCTOR KTA1532T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌHigh-Speed Switching. 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌLarge Current Capacitance. ᴌUltrasmall Package Facilitates Miniaturization in end Products. L C ᴌComplementary to KTC3532T. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V DC IC -1.5 A Pulse ICP -3 A IB -300 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I J MAXIMUM RATING (Ta=25ᴱ) E F G H I J K L ᴌHigh Allowable Power Dissipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 3. COLLECTOR TSM Marking Lot No. Type Name SB * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-12V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=-10Ọ A, IE=0 -20 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 -5 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-750mA, IB=-15mA - -120 -180 mV Base-Emitter Saturation Voltage VBE(sat) IC=-750mA, IB=-15mA - -0.85 -1.2 V DC Current Gain hFE VCE=-2V, IC=-100mA 200 - 560 Transition Frequency fT VCE=-2V, IC=-300mA - 210 - MHz VCB=-10V, f=1MHz - 30 - pF - 50 - - 90 - - 15 - Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB2 IB1 RB 50Ω tf RL VR 220µF Fall Time OUTPUT nS 470µF V BE =5V VCC =-5V -20I B1=20IB2=IC =-750mA 2001. 6. 26 Revision No : 0 1/3 KTA1532T h FE - I C I C - V CE mA -1.4 -10mA -1.2 -8mA -1.0 -6mA -0.8 -4mA -0.6 -2mA -0.4 -0.2 0 DC CURRENT GAIN h FE -40 mA A -1.6 1K -20mA -30 -1.8 -50m COLLECTOR CURRENT I C (A) -2.0 IB=0mA 0 VCE =-2V 500 Ta=7 5 C 300 Ta=2 5 C Ta=-2 5 C 100 50 30 -0.01 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) -0.03 -300 -100 -50 C C C 5 =-2 25 Ta Ta= -10 -5 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) I C /I B =20 = Ta -1K I C /I B =50 -300 -100 C 75 Ta= C 25 Ta= 5 C 2 Ta= -50 -30 -10 -0.01 -0.03 -0.1 -3 Ta=-25 C Ta=75 C Ta=25 C -0.3 -0.1 -0.3 -1 COLLECTOR CURRENT I C (A) 2001. 6. 26 Revision No : 0 -3 -3 VCE =-2V -0.9 -0.8 -0.7 Ta=75 C Ta=25 C Ta=-25 C -5 -1.0 COLLECTOR CURRENT IC (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =50 -0.03 -1 I C - V BE -10 -0.1 -0.01 -0.3 COLLECTOR CURRENT I C (A) VBE(sat) - I C -0.5 -3 -500 COLLECTOR CURRENT I C (A) -1 -1 VCE(sat) - I C -500 75 -0.3 COLLECTOR CURRENT I C (A) VCE(sat) - I C -30 -0.1 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTA1532T C ob - V CB 1K VCE =-2V 500 300 100 50 30 -0.01 -0.03 -0.1 -1 -0.3 COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) fT - IC 100 f=1MHz 50 30 10 5 3 -3 -1 -3 SAFE OPERATING AREA -0.03 COLLECTOR POWER DISSIPATION PC (W) -0.05 0m AT -0.3 -0.1 10 OP 1m S* S* S* ER -0.5 m * 10 S* 0µ DC S 0µ -1 50 COLLECTOR CURRENT I C (A) I C MAX.(PULSED) I C MAX (CONTINUOUS) IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) -0.01 -0.1 -0.3 -1 -3 -30 Pc - Ta 10 -3 -10 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) -5 -5 -10 -30 1.4 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 26 Revision No : 0 3/3 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.