SEMICONDUCTOR KTC3551T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E FEATURES B K DIM A B Adoption of MBIT Processes. 1 C 3 D D G High-Speed Switching. 2 F A Low Collector-to-Emitter Saturation Voltage. G Large Current Capacitance. Ultrasmall Package Facilitates Miniaturization in end Products. MAXIMUM RATING (Ta=25 CHARACTERISTIC J SYMBOL RATING UNIT VCBO 80 V VCES 80 VCEO 50 VEBO 5 DC IC 1.0 Pulse ICP 3 IB 200 mA PC * 0.9 W Tj 150 Tstg -55 150 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current L ) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I C Complementary to KTA1551T. 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + E F G H I J K L High Allowable Power Dis sipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR V V TSM A Marking Lot No. HK Type Name ) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO VCB=40V, IE=0 MIN. TYP. MAX. UNIT - - 0.1 A IEBO VEB=4V, IC=0 - - 0.1 A V(BR)CBO IC=10 A, IE=0 80 - - V Emitter Cut-off Current Collector-Base Breakdown Voltage TEST CONDITION V(BR)CES IC=100 A, VBE=0 80 - - V V(BR)CEO IC=1mA, IB=0 50 - - V V(BR)EBO IE=10 A, IC=0 5 - - V VCE(sat)1 IC=500mA, IB=10mA - 130 190 mV VCE(sat)2 IC=300mA, IB=6mA - 90 135 mV VBE(sat) IC=500mA, IB=10mA - 0.81 1.2 V DC Current Gain hFE VCE=2V, IC=100mA 200 - 560 Transition Frequency fT VCE=10V, IC=300mA - 420 - MHz VCB=10V, f=1MHz - 6 - pF - 35 - - 330 - - 40 - Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Switching Time Storage Time tstg 50Ω VR IB1 I B2 RB 100µF Fall Time tf OUTPUT RL nS 470µF V BE =-5V VCC =25V 20IB1=-20IB2=IC =500mA 2001. 6. 28 Revision No : 0 1/3 KTC3551T h FE - I C I C - V CE 8mA DC CURRENT GAIN h FE 6mA 4mA 600 2mA 400 200 IB=0mA 0.2 0 0.4 0.6 0.8 Ta=75 C 300 Ta=25 C Ta=-25 C 100 50 30 VCE =2V 10 0.01 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.03 0.3 0.1 Ta 0.03 5 =-2 C Ta C 25 Ta= 0.01 0.01 0.03 0.1 0.3 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.5 C =75 1 I C /I B =50 0.5 0.3 0.1 5 Ta=7 0.05 0.01 0.01 0.03 3 Ta=-25 C Ta=75 C 0.3 0.1 0.3 COLLECTOR CURRENT I C (A) 2001. 6. 28 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.03 Revision No : 0 1 VCE =2V 0.9 Ta=7 5 C Ta=2 5 C COLLECTOR CURRENT I C (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 0.1 0.01 1 0.3 I C - V BE 1.0 Ta=25 C C COLLECTOR CURRENT I C (A) I C /I B =50 0.5 25 Ta=- 0.1 VBE(sat) - I C 1 C C Ta=25 0.03 COLLECTOR CURRENT I C (A) 10 1.0 VCE(sat) - I C I C /I B =20 0.05 0.3 COLLECTOR CURRENT I C (A) VCE(sat) - I C 1 0.1 5 C 0 500 Ta=-2 50mA 800 1K 10mA 30mA 40mA 20m A COLLECTOR CURRENT I C (A) 1K 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC3551T C ob - V CB TRANSITION FREQUENCY f T (MHz) 5K COLLECTOR OUTPUT CAPACITANCE C ob (pF) f T - IC VCE =10V 3K 1K 500 300 100 50 0.01 0.03 0.1 1 0.3 100 f=1MHz 50 30 10 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA S* S* 0µ 0µ 50 S* S* m 10 C 0.3 S* 0m 10 0.5 I C MAX (CONTINUOUS) 10 1 1m D RA PE O 0.05 0.03 0.01 0.1 N 0.1 O TI COLLECTOR CURRENT I C (A) 3 Pc - Ta I C MAX.(PULSED) COLLECTOR POWER DISSIPATION PC (W) 5 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 0.3 1 3 10 30 100 1.2 MOUNTED ON A 1.0 CERAMIC BOARD (600mm 2 `0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 28 Revision No : 0 3/3