SEMICONDUCTOR KTC4217 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR COLOR TV CHROMA OUTPUT AND AUDIO OUTPUT APPLICATIONS. A B D C E F FEATURES High breakdown voltage : VCEO 300V. G H DIM A B C D E F G H J K L M N O P J MAXIMUM RATING (Ta=25 K ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V VEBO 6 DC IC 200 Pulse ICP 400 Emitter-Base Voltage Collector Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 1.5 PC 10 Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC L M N V mA O 1 2 P 3 1. EMITTER 2. COLLECTOR 3. BASE W MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=200V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A hFE(Note) VCE=10V, IC=10mA 60 - 200 fT VCE=10V, IC=10mA - 70 - MHz Cob VCB=50V, f=1MHz - 3.5 - pF Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2mA - - 1.0 V DC Current Gain Transition Frequency Output Capacitance Note) hFE Classification : O:60 120, Y:100 2003. 7. 24 Revision No : 1 200. 1/3 KTC4217 A 0.8m 0.6mA 60 0.4mA 40 0.2mA 20 I B=0mA 2 0 200 4 6 8 140 0µ A 250µA 30 200µA 150µA 20 100µA 10 50µA IB =0µA 0 10 20 30 40 50 COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE h FE - I C 300 120 100 80 DC CURRENT GAIN h FE 160 300µA COLLECTOR-EMITTER VOLTAGE VCE (V) COMMON EMITTER VCE =10V 180 350µA 40 0 10 Ta=-25 C 0 50 40 A 1.6m 1.4mA 1.2mA 1.0mA EMITTER Ta=25 C 80 60 40 VCE =10V Ta=75 C 100 Ta=25 C Ta=-25 C 50 30 20 0 200 0.2 0.4 0.6 0.8 1.0 1.2 30 100 C ob - VCB 10 3 5 10 30 50 COLLECTOR CURRENT I C (mA) 2003. 7. 24 10 fT - I C 30 1 3 COLLECTOR CURRENT I C (mA) 50 5 1 BASE-EMITTER VOLTAGE VBE (V) COMMON EMITTER VCE =10V 100 10 1.4 Revision No : 1 100 COLLTCTOR OUTPUT CAPACITANCE C ob (pF) 0 TRANSITION FREQUENCY fT (MHz) COMMON Ta=75 C Ta=25 C COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 100 I C - VCE COLLECTOR CURRENT I C (mA) I C - VCE 100 300 f=1MHz 50 30 10 5 3 1 0.1 0.3 0.5 1 3 5 10 30 50 COLLECTOR-BASE VOLTAGE VCB (V) 2/3 KTC4217 1 VBE(sat) - I C 3 COMMON EMITTER I C /I B =10 0.5 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - IC 0.3 Ta=25 C Ta=75 C 0.1 Ta=-25 C 0.05 0.03 I C /I B =10 1 Ta=-25 C 0.5 Ta=25 C Ta=75 C 0.3 0.1 1 3 5 10 30 50 100 1 3 COLLECTOR CURRENT I C (mA) 5 10 30 50 100 COLLECTOR CURRENT I C (mA) 500 I C MAX.(PULSED) * I C MAX.(CONTINOUS) s* 0µ 10 s 1m ms N 10 O TI RA C) PE 5 O =2 C (Tc 300 D COLLECTOR CURRENT I C (mA) 1K 100 DC O (T PE a= RA 25 T C) ION 50 30 SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARY WITH INCREASE IN TEMPERATURE 10 * 5 3 2 3 5 10 30 50 100 300 500 COLLECTOR POWER DISSIPATION Pc (W) SAFE OPERATING AREA Pc - Ta 12 (1) Tc=Ta (1) 10 INFINITE HEAT SINK (2) NO HEAT SINK 8 6 4 (2) 2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 7. 24 Revision No : 1 3/3