SEMICONDUCTOR KTC3531T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS E FEATURES B K DIM A B ᴌLow Saturation Voltage 1 C 3 D D G 2 F A ᴌComplementary to KTA1531T. G : VCE(sat)=0.3V(Max.) at IC=0.5A. Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V IC 1 A PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range L UNIT C RATING 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + J 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I SYMBOL E F G H I J K L MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR TSM * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) Marking h FE Rank Type Name Lot No. HA ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 Ọ A VCE=2V, IC=50mA 120 - 400 hFE(2) VCE=2V, IC=1A(Pulse) 30 - - Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.1 0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V fT VCE=10V, IC=50mA - 180 - MHz VCB=10V, IE=0, f=1MHz - 15 - pF hFE(1) (Note) DC Current Gain Transition Frequency Cob Collector Output Capacitance Note : hFE Classification 2001. 6. 23 Y:120ᴕ240, GR(G):200ᴕ400 Revision No : 0 1/2 KTC3531T I C - VCE I C - VCE 1000 I B =6mA 600 I B =4mA 400 I B =2mA 200 I B =1mA I B =0mA 0 0 1 2 3 4 5 6 7 A IB =30mA 800 IB =15mA IB =10mA 600 IB =8mA 400 IB =5mA IB =3mA 200 I B =1mA I B =0mA 0 8 0 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.2 0.3 0.4 0.5 0.6 0.7 0.1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C VCE =2V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 I C /I B=10 1.0 0.5 0.3 0.1 0.05 0.03 0.01 10 30 100 fT - IC 1k 3k 10k hFE - I C 2K 500 300 VCE =10V 1K DC CURRENT GAIN h FE TRANSITION FREQUENCY f T (MHz) 300 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 500 300 100 50 30 10 VCE =2V 100 50 30 10 5 3 1 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 2001. 6. 23 0.8 0.9 1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VBE 1.4 IB =20mA IB = 50m I B =10mA I B =8mA COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 800 Revision No : 0 1k 1 3 10 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) 2/2