SEMICONDUCTOR KTC3532T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌHigh-Speed Switching. 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌLarge Current Capacitance. ᴌUltrasmall Package Facilitates Miniaturization in end Products. L C ᴌComplementary to KTA1532T CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V DC IC 1.5 A Pulse ICP 3 A IB 300 mA PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I J MAXIMUM RATING (Ta=25ᴱ) E F G H I J K L ᴌHigh Allowable Power Dissipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 3. COLLECTOR TSM Marking Lot No. HB Type Name * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=12V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=10ỌA, IE=0 20 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10Ọ A, IC=0 5 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=750mA, IB=15mA - 130 200 mV Base-Emitter Saturation Voltage VBE(sat) IC=750mA, IB=15mA - 0.85 1.2 V DC Current Gain hFE VCE=2V, IC=100mA 200 - 560 Transition Frequency fT VCE=2V, IC=300mA - 210 - MHz Cob VCB=10V, f=1MHz - 20 - pF - 40 - - 180 - - 20 - Collector Output Capacitance Turn-On Time PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB1 I B2 RB 50Ω tf RL VR 220µF Fall Time OUTPUT nS 470µF V BE =-5V VCC =5V 20IB1=-20IB2=IC =750mA 2001. 6. 26 Revision No : 0 1/3 KTC3532T h FE - I C I C - V CE 1.6 1.4 1K A 0m 2 30mA 40mA 8mA 6mA 1.2 4mA 1.0 0.8 2mA 0.6 0.4 0.2 IB=0mA 0 0 0.1 0.2 VCE =2V 10mA 0.3 0.4 0.5 0.6 Ta=75 C Ta=25 C Ta=-25 C 500 300 100 50 30 0.01 0.7 0.8 0.9 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.03 I C /I B =20 100 50 C 75 Ta= 5 C C =2 Ta a=-25 T 30 10 5 0.01 0.03 0.1 0.3 1 1K I C /I B =50 500 300 100 75 Ta= 50 10 0.01 3 0.03 0.1 3 Ta=-25 C Ta=75 C Ta=25 C 0.1 0.03 0.1 0.3 1 COLLECTOR CURRENT I C (A) 2001. 6. 26 Revision No : 0 3 3 VCE =2V 0.9 0.8 0.7 0.6 Ta=75 C Ta=25 C 5 1.0 COLLECTOR CURRENT I C (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =50 0.01 1 I C - V BE 10 0.3 0.3 COLLECTOR CURRENT I C (A) VBE(sat) - I C 0.5 C C 25 Ta= 5 C 2 Ta= 30 COLLECTOR CURRENT I C (A) 1 3 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 300 1 0.3 COLLECTOR CURRENT I C (A) VCE(sat) - I C 500 0.1 0.5 0.4 0.3 Ta=-25 C 1.8 DC CURRENT GAIN h FE 50m A COLLECTOR CURRENT I C (A) 2.0 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC3532T C ob - V CB 1K COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) f T - IC VCE =2V 500 300 100 50 30 0.01 0.03 0.3 0.1 100 50 30 10 5 3 3 1 f=1MHz 1 3 SAFE OPERATING AREA 0.03 0.01 0.1 COLLECTOR POWER DISSIPATION PC (W) 0.05 S* S* AT IO 0.3 0.1 0m S* * OP ER 0.5 m * 10 10 S 0µ DC 1m 50 1 S 0µ COLLECTOR CURRENT I C (A) I C MAX.(PULSED) I C MAX (CONTINUOUS) N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 0.3 1 3 3 0 Pc - Ta 10 3 10 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) 5 5 10 30 1.4 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 26 Revision No : 0 3/3