SEMICONDUCTOR KTA1541T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E FEATURES B K DIM A B Adoption of MBIT Processes. 1 C 3 D D G High Speed Switching. 2 F A Low Collector-to-Emitter Saturation Voltage. G Large Current Capacitance. Ultrasmall Package facilitates miniaturization in end products. MAXIMUM RATING (Ta=25 CHARACTERISTIC J SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V DC IC -1.5 Pulse ICP -3 IB -300 mA PC * 0.9 W Tj 150 Tstg -55 150 Collector Current L ) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I C Complementary to KTC3541T. 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + E F G H I J K L High Allowable Power Dissipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR TSM A Marking Lot No. SF Type Name ) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 A Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -30 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=-750mA, IB=-15mA - -250 -375 mV Base-Emitter Saturation Voltage VBE(sat) IC=-750mA, IB=-15mA - -0.85 -1.2 V DC Current Gain hFE VCE=-2V, IC=-100mA 200 - 560 Transition Frequency fT VCE=-10V, IC=-300mA - 380 - MHz VCB=-10V, f=1MHz - 25 - pF - 35 - - 115 - - 30 - Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Switching Time Storage Time tstg IB1 I B2 RB 50Ω tf 24Ω VR 100µF Fall Time OUTPUT nS 470µF V BE =5V VCC =-12V -20IB1=20IB2=IC =-500mA 2001. 6. 30 Revision No : 0 1/3 KTA1541T h FE - I C I C - V CE -2.0 COLLECTOR CURRENT I C (A) -1.6 -1.4 A -20m -1.2 -10mA -8mA -6mA -4mA -1.0 -0.8 -0.6 -2mA -0.4 -0.2 0 DC CURRENT GAIN h FE 1K -50mA A -40m -30mA -1.8 IB=0mA Ta=75 C 300 Ta=25 C Ta=-25 C 100 50 30 10 -0.01 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 VCE =-2V 500 COLLECTOR-EMITTER VOLTAGE VCE (mV) -0.03 -0.5 -0.3 -0.1 C 25 Ta= -0.01 -0.01 -0.03 C -25 = Ta C -0.1 -0.3 -1 -3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C /I B =20 75 Ta= -2 I C /I B =50 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.01 -0.03 -0.1 Ta=-25 C Ta=75 C -0.3 -0.03 -0.1 -0.3 -1 COLLECTOR CURRENT I C (A) 2001. 6. 30 Revision No : 0 -1 -3 -3 VCE =-2V -1.4 -1.2 -1.0 Ta=75 C Ta=25 C Ta=-2 5 C -3 -1.6 COLLECTOR CURRENT I C (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =50 -5 -0.1 -0.01 -0.3 I C - V BE -10 -0.5 C COLLECTOR CURRENT I C (A) VBE(sat) - I C Ta=25 C -25 Ta= C Ta=75 5 C Ta=2 COLLECTOR CURRENT I C (A) -1 -3 VCE(sat) - I C -1 -0.03 -1 -0.3 COLLECTOR CURRENT I C (A) VCE(sat) - I C -0.05 -0.1 -0.8 -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTA1541T C ob - V CB 1K 500 300 100 50 VCE =-10V 30 -0.01 -0.03 -0.3 -0.1 -1 COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) fT - IC 100 f=1MHz 50 30 10 5 3 -0.1 COLLECTOR CURRENT I C (A) -0.3 0m OP S* ER -0.3 S* AT IO -0.1 -0.05 -0.03 -0.01 -0.1 N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) -0.3 -0.5 -1 -3 -5 -10 COLLECTOR POWER DISSIPATION PC (W) 10 S* S* m * DC -0.5 1m 10 0µ I C MAX (CONTINUOUS) 50 COLLECTOR CURRENT I C (A) I C MAX.(PULSED) S 0µ -1 -10 -30 Pc - Ta 10 -3 -3 COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA -5 -1 1.4 MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) -30 -50 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 30 Revision No : 0 3/3