SEMICONDUCTOR KTC3535T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌHigh Speed Switching. 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌHigh Current Capacitance. ᴌUltrasmall-Sized Package permitting applied sets to be L J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V DC IC 3 Pulse ICP 5 IB 600 mA PC * 0.9 W Tj 150 ᴱ Collector Current Base Current Collector Power Dissipation Junction Temperature -55ᴕ150 * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 J 1. EMITTER 2. BASE 3. COLLECTOR TSM A Tstg Storage Temperature Range 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + H I C ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1535T E F G H I J K L made small and slim. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + Marking Lot No. ᴱ HD Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=12V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=10ỌA, IE=0 20 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 20 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10Ọ A, IC=0 5 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=30mA - 120 150 mV Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=30mA - 0.85 1.2 V DC Current Gain hFE VCE=2V, IC=500mA 200 - 560 Transition Frequency fT VCE=2V, IC=500mA - 180 - MHz Cob VCB=10V, f=1MHz - 30 - pF - 30 - - 210 - - 11 - Collector Output Capacitance Turn-On Time PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB1 I B2 1kΩ 50Ω tf RL VR 220µF Fall Time OUTPUT nS 470µF V BE =-5V VCC =5V 20IB1=-20IB2=IC =1.5A 2001. 6. 28 Revision No : 0 1/3 KTC3535T I C - V CE 4 4 20mA 15mA 3 10mA 2 5mA 1 1mA 2mA IB=0mA 0 0 0.2 0.4 0.6 0.8 15mA 3 10mA 2 5mA 1 IB=0mA 0 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT GAIN h FE VCE =2V 700 Ta=75 C Ta=25 C Ta=-25 C 100 0.03 0.1 0.3 1 3 10 1K 500 300 50 30 75 Ta= C C 5 =2 -25 Ta Ta= 10 5 3 1 0.01 0.03 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) C 75 Ta= C 25 5 C Ta= a=-2 T 5 3 1 0.01 0.03 0.1 0.3 1 COLLECTOR CURRENT I C (A) 2001. 6. 28 0.1 0.3 1 3 10 VBE(sat) - I C 100 10 C COLLECTOR CURRENT I C (A) IC /IB =50 50 30 5 100 VCE(sat) - I C 1K 4 IC /IB =20 COLLECTOR CURRENT I C (A) 500 300 3 VCE(sat) - I C 1k 0.01 2 COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C 300 2mA 1mA COLLECTOR-EMITTER VOLTAGE VCE (V) 500 20mA 4 0 1.0 25mA 40m A 25mA COLLECTOR CURRENT IC (A) mA 5 A 0m 60 COLLECTOR CURRENT I C (A) 5 I C - V CE Revision No : 0 3 10 10 IC /IB =50 5 3 1 Ta=-25 C 0.5 Ta=25 C Ta=75 C 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 2/3 KTC3535T fT - IC TRANSITION FREQUENCY f T (MHz) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 C Ta=2 5 C Ta=-25 C VCE =2V Ta=7 COLLECTOR CURRENT I C (A) I C - V BE 0.2 0 0.4 0.6 0.8 1.0 1K VCE =2V 500 300 100 50 30 0.01 0.1 1 0.3 3 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) C ob - V CB SAFE OPERATING AREA 10 100 f=1MHz 5 1 3 5 10 3 0 COLLECTOR-BASE VOLTAGE VCB (V) 1 I C MAX (CONTINUOUS) 10 DC 0.5 OP ER A * * 10 10 mS 3 S* 0µ 30 I C MAX.(PULSED) S 1m 50 COLLECTOR CURRENT I C (A) 70 50 COLLECTOR OUTPUT CAPACITANCE C ob (pF) 0.03 0m S* TI 0.3 ON * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 0.1 0.05 0.02 0.2 1 3 10 20 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.0 MOUNTED ON A CERAMIC BOARD 0.8 (600mm 2 `0.8mm) 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2001. 6. 28 Revision No : 0 3/3 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.