KEC KTC812T

SEMICONDUCTOR
KTC812T
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
E
High Emitter-Base Voltage : VEBO=25V(Min.)
K
1
6
G
2
5
G
High Reverse hFE
K
B
3
4
DIM
A
B
C
D
E
F
G
D
A
Low on Resistance : RON=1 (Typ.), (IB=5mA)
F
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
SYMBOL
RATING
UNIT
VCBO
50
V
Collector-Base Voltage
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
25
V
Collector Current
IC
300
mA
Base Current
IB
60
mA
PC *
0.9
mW
Tj
150
Tstg
-55 150
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8
L
CHARACTERISTIC
C
)
I
MAXIMUM RATING (Ta=25
J
1. Q 1
2. Q 1
3. Q 2
4. Q 2
5. Q 2
6. Q 1
MILLIMETERS
_ 0.2
2.9 +
1.6+0.2/-0.1
_ 0.05
0.70 +
_ 0.1
0.4 +
2.8+0.2/-0.3
_ 0.2
1.9 +
0.95
H
I
_ 0.05
0.16 +
0.00-0.10
J
0.25+0.25/-0.15
K
L
0.60
0.55
H
J
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
TS6
)
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
Marking
4
h FE Rank
Q1
1
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
5
4
2
3
Lot No.
M
Type Name
Q2
6
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=25V, IC=0
-
-
0.1
A
DC Current Gain
hFE
VCE=2V, IC=4mA
350
-
1200
VCE(sat)
IC=30mA, IB=3mA
-
0.042
0.3
V
Base-Emitter Voltage
VBE
VCE=2V, IC=4mA
-
0.61
-
V
Transition Frequency
fT
VCE=6V, IC=4mA
-
30
-
MHz
-
4.8
7
pF
-
160
-
-
500
-
-
130
-
Turn-on Time
Time
OUTPUT
ton
INPUT
Storage Time
tstg
Fall Time
tf
Note : hFE Classification
2002. 12. 5
VCB=10V, IE=0, f=1MHz
4kΩ
10V
50Ω
Switching
Cob
1kΩ
Collector Output Capacitance
3kΩ
Collector-Emitter Saturation Voltage
1µs
DUTY CYCLE <
= 2%
VBB =-3V
VCC =12V
nS
B: 350 1200
Revision No : 1
1/3
KTC812T
(Q 1 , Q 2 COMMON)
I C - V CE (REVERSE REGION)
I C - VCE
40
-10
160
COMMON
EMITTER
Ta=25 C
140
120
100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
50
80
30
60
40
20
I B =20µA
10
0
0
0
2
4
6
8
10
COMMON
EMITTER
Ta=25 C
-8
50
40
30
-6
20
-4
I B=10µA
-2
0
0
-2
0
COLLECTOR-EMITTER VOLTAGE V CE (V)
-4
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE(sat) (mV)
DC CURRENT GAIN h FE
Ta=100 C
1k
500
VCE =6V
Ta=25 C
Ta=-25 C
300
VCE =2V
100
50
0.3
1
3
10
30
100
500
300
COMMON EMITTER
I C /I B =10
100
50
30
10
5
3
1
0.1
COLLECTOR CURRENT I C (mA)
0.3
1
3
TRANSTION FREQUENCY f T (MHz)
VCE =2V
00
C
200
Ta=
1
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
0
0.4
0.8
Ta=25 C
Ta=-25 C
1.2
BASE-EMITTER VOLTAGE VBE (V)
2002. 12. 5
30
100
300
fT - IE
300
0
10
COLLECTOR CURRENT I C (mA)
I C - V BE
100
-10
V CE(sat) - I C
COMMON EMITTER
3k
-8
COLLECTOR-EMITTER VOLTAGE V CE (V)
h FE - I C
5k
-6
Revision No : 1
1.6
500
300
COMMON EMITTER
VCE =6V
Ta=25 C
100
50
30
10
5
-0.1
-0.3
-1
-3
-10
-30
-100
EMITTER CURRENT I E (mA)
2/3
KTC812T
R ON - I B
30
f=1MHz
I E =0
Ta=25 C
10
5
3
1
0.3
0.5
1
3
5
10
30
COLLECTOR-EMITTER ON RESISTANCE
R ON (Ω)
COLLECTOR OUTPUT CAPACITANCE
C ob (pF)
C ob - V CB
100
1kΩ
50
30
10kΩ
IB
10
5
3
1
0.5
0.3
0.01
0.03
0.1
0.3
1
3
10
BASE CURRENT I B (mA)
COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR POWER DISSIPATION
PC (W)
Pc - Ta
1.2
MOUNTED ON A
CERAMIC BOARD
1.0
(600mm 2 `0.8mm)
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
2002. 12. 5
Revision No : 1
3/3