TI TPS40200MDREP

TPS40200-EP
www.ti.com
SGLS371 – JANUARY 2007
WIDE-INPUT-RANGE NONSYNCHRONOUS VOLTAGE-MODE CONTROLLER
FEATURES
•
•
•
•
•
•
•
•
•
•
(1)
Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
Extended Temperature Performance of –55°C
to 125°C
Enhanced Diminishing Manufacturing Sources
(DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree (1)
Input Voltage Range 4.5 V to 52 V
Output Voltage (700 mV to 87% Vin)
200-mA Internal P-Channel FET Driver
Voltage Feed-Forward Compensation
Undervoltage Lockout
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
•
•
•
•
•
•
•
Programmable Fixed-Frequency (35 kHz to
500 kHz) Operation
Programmable Short-Circuit Protection
Hiccup Overcurrent Fault Recovery
Programmable Closed-Loop Soft Start
700-mV 1% Reference Voltage
External Synchronization
Small 8-Pin Small-Outline Integrated Circuit
(SOIC) (D) Package
APPLICATIONS
•
•
•
•
•
Industrial Control
Distributed Power Systems
DSL/Cable Modems
Scanners
Telecom
DESCRIPTION
The TPS40200 is a flexible nonsynchronous controller with a built-in 200-mA driver for P-channel FETs. The
circuit operates with inputs up to 52 V, with a power-saving feature that turns off driver current once the external
FET has been fully turned on. This feature extends the flexibility of the device, allowing it to operate with an
input voltage up to 52 V, without dissipating excessive power. The circuit operates with voltage-mode feedback
and has feed-forward input-voltage compensation that responds instantly to input-voltage change. The integral
700-mV reference is trimmed to 2%, providing the means to accurately control low voltages. The TPS40200 is
available in an 8-pin SOIC, and supports many of the features of more complex controllers. Clock frequency,
soft start, and overcurrent limit each are easily programmed by a single, external component. The part has
undervoltage lockout, and can be easily synchronized to other controllers or a system clock to satisfy
sequencing and/or noise-reduction requirements.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
TPS40200-EP
www.ti.com
SGLS371 – JANUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATION
100
VIN
R5
C3
VDD 8
2 SS
ISNS 7
RSENSE
C5
3 COMP GDRV 6
4 FB
Q1 L1
GND 5
VOUT
C2
D1
R4
R1
Efficiency - %
TPS40200
1 RC
C4
R3
VIN = 8 V
VIN = 12 V
VIN = 16 V
90
C1
80
70
60
R2
VOUT = 5 V
50
C6
0
Figure 1. 12-V to 5-V Buck Converter
With 94% Efficiency
0.5
1
1.5
2
Load Current - A
2.5
3
Figure 2. Typical Efficiency of Application Circuit 1
(Described in Application 1)
ELECTROSTATIC DISCHARGE (ESD) PROTECTION
MAX
UNIT
Human-Body Model
MIN
1500
V
CDM
1500
V
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
UNIT
VDD, ISNS
Input voltage range
52
RC, FB
–0.3 to 5.5
SS
Output voltage range
V
–0.3 to 9
COMP
–0.3 to 9
GDRV
(VIN – 10) to VIN
V
TJ
Operating virtual junction temperature range
–55 to 150
°C
Tstg
Storage temperature range
–55 to 150
°C
260
°C
Lead temperature 1,6 mm (1/16 in) from case for 10 s
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
VDD
2
Input voltage
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MIN
MAX
4.5
52
UNIT
V
TPS40200-EP
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SGLS371 – JANUARY 2007
ELECTRICAL CHARACTERISTICS
–55°C < TA = TJ < 125°C, VDD = 12 V, fOSC = 100 kHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
689
696
702
UNIT
Voltage Reference
COMP = FB, TJ = 25°C
VFB
Feedback voltage
686
696
703
4.5 V < VDD < 52 V –40°C < TJ < 125°C
TJ = 25°C
679
696
710
–55°C < TJ < 125°C
675
696
710
mV
Gate Driver
Isrc
Gate driver pullup current
125
300
mA
Isnk
Gate driver pulldown current
200
300
mA
VGATE
Gate driver output voltage
6
8
10
V
1.5
3
mA
4.25
4.5
VGATE = (VDD – VGDRV), for 12 V < VDD < 52 V
Quiescent Current
Iqq
Device quiescent current
FOSC = 300 kHz, Driver not switching,
4.5 V < VDD < 52 V
Undervoltage Lockout (UVLO)
VUVLO(on)
Turnon threshold
VUVLO(off)
Turnoff threshold
VUVLO(HYST)
Hysteresis
3.8
4.05
V
110
200
275
mV
Soft Start
RSS(chg)
Internal soft-start pullup resistance
65
105
170
kΩ
RSS(dchg)
Internal soft-start pulldown
resistance
190
305
485
kΩ
VSSRST
Soft-start reset threshold
100
150
200
mV
Overcurrent Protection
0°C < TJ < 125°C
VILIM
Overcurrent threshold
65
100
140
4.5 V < VDD < 52 V –40°C < TJ < 125°C
55
100
140
–55°C < TJ < 125°C
35
100
150
2
%
150
200
mV
OCDF
Overcurrent duty cycle (1)
VILIM(rst)
Overcurrent reset threshold
100
Oscillator frequency range (1)
35
mV
Oscillator
FOSC
Oscillator frequency
Frequency line regulation
VRMP
Ramp amplitude
500
RRC = 200 kΩ, CRC = 470 pF
85
100
115
RRC = 68.1 kΩ, CRC = 470 pF
255
300
345
12 V < VDD < 52 V
–9
0
4.5 V < VDD < 12 V
–20
0
VDD÷ 10
4.5 V < VDD < 52 V
kHz
%
V
Pulse-Width Modulator
tMIN
Minimum controllable pulse width
DMAX
Maximum duty cycle
KPWM
Modulator and power-stage
dc gain
VDD = 12 V
200
500
VDD = 30 V
100
200
ns
FOSC = 100 kHz, CL = 470 pF
93
95
FOSC = 300 kHz, CL = 470 pF
87
93
8
10
12
V/V
100
250
nA
%
Error Amplifier
IIB
Input bias current
AOL
Open-loop gain (1)
60
80
dB
GBWP
Unity gain bandwidth (1)
1.5
3
MHz
ICOMP(src)
Output source current
100
250
(1)
VFB = 0.6 V, COMP = 1 V
µA
By design only. Not tested in production.
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ELECTRICAL CHARACTERISTICS (continued)
–55°C < TA = TJ < 125°C, VDD = 12 V, fOSC = 100 kHz (unless otherwise noted)
PARAMETER
ICOMP(snk)
TEST CONDITIONS
Output sink current
VFB = 1.2 V, COMP = 1 V
MIN
TYP
1.0
2.5
MAX
UNIT
mA
THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
θJC
Thermal resistance, junction to case
θJA
Thermal resistance, junction to ambient
Thermal resistance, junction to ambient
θJA
(1)
TYP
UNIT
49
°C/W
(1)HIGH-K
97.5
°C/W
(1)LOW-K
176
°C/W
(1)
TI uses test boards designed to JESD 51-3 and JESD 51-7 for thermal-impedance measurements. The parameters outlined in these
standards also are used to set up thermal models.
ORDERING INFORMATION
OUTPUT
VOLTAGE
TA
–55°C to 125°C
PACKAGE
Adjustable
SOIC – D
ORDERABLE PART NUMBER
TPS40200MDREP
MEDIUM
Tape and reel
QUANTITY
2500/reel
DEVICE INFORMATION
Functional Block Diagram
COMP 3
FB 4
–
E/A and SS
Reference
8 VDD
SS 2
+
GDRV voltage
swing limited
to (VIN – 8 V)
+ 700 mV
Soft-Start
and
Overcurrent
PWM
Logic
ISNS 7
Driver
6 GDRV
Enable E/A
5 GND
OSC
RC 1
UVLO
D PACKAGE
(TOP VIEW)
RC
SS
COMP
FB
4
1
8
2
7
3
6
4
5
VDD
ISNS
GDRV
GND
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DEVICE INFORMATION (continued)
TERMINAL FUNCTIONS
TERMINAL
NAME
I/O
NO.
DESCRIPTION
RC
1
I
Switching frequency-setting RC network. Connect capacitor from RC pin to GND pin and resistor from VIN
pin to RC pin. The device may be synchronized to an external clock by connecting an open-drain output to
this pin and pulling it to GND. The pulse width for synchronization should not be excessive.
SS
2
I
Soft-start programming pin. Connect capacitor from SS to GND to program soft-start time. Pulling this pin
below 150 mV causes the output switching to stop, placing the device in a shutdown state. The pin also
functions as a restart timer for overcurrent events.
COMP
3
O
Compensation. Error amplifier output. Connect control-loop compensation network from COMP to FB.
FB
4
I
Feedback. Error amplifier inverting input. Connect feedback resistor network center tap to this pin.
GND
5
GDRV
6
O
Driver output for external P-channel MOSFET
ISNS
7
I
Current-sense comparator input. Connect a current sense resistor between ISNS and VDD in order to set
desired overcurrent threshold.
VDD
8
I
System input voltage. Connect local bypass capacitor from VDD to GND.
Device ground
TYPICAL CHARACTERISTICS
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT vs VDD
3
1.66
1.65
2.5
1.64
2
1.62
IDD - mA
IDD - mA
1.63
1.61
1.6
1.5
1
1.59
1.58
VDD = 12 V
0.5
1.57
1.56
-50
0
-25
0
25
50
75
100
5
125
10
15
20
25
30 35
VDD - V
40
45
50
55
Figure 3.
Figure 4.
SOFT-START THRESHOLD vs TEMPERATURE
UVLO TURNON AND TURNOFF vs TEMPERATURE
156.5
4.3
156
4.25
UVLO Turnon - V
Reset Threshold - mV
Temperature - °C
155.5
155
154.5
154
VDD = 12 V
153.5
-50
-25
Turnon
4.2
4.15
4.1
Turnoff
4.05
4
0
Temperature - °C
25
50
Temperature - °C
Figure 5.
Figure 6.
25
50
75
100
125
-50
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-25
0
75
100
125
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TYPICAL CHARACTERISTICS (continued)
OSCILLATOR FREQUENCY vs TEMPERATURE
CURRENT-LIMIT THRESHOLD vs TEMPERATURE
103
98
96
102.5
VDD = 4.5 V
102
R = 202 kW
C = 470 pF
92
ILIM Threshold - mV
Frequency - kHz
94
90
88
VDD = 12 V
86
84
80
-50
-25
0
25
50
75
100
101
VDD = 12 V
100.5
100
VDD = 52 V
82
101.5
99.5
-50
125
-25
0
Temperature (°C)
25
Figure 7.
75
100
125
Figure 8.
OSCILLATOR FREQUENCY vs VDD
POWER-STAGE GAIN vs VDD
275
21.00
R = 68.1 kW
C = 470 pF
TJ = 25°C
270
265
TJ = 25°C
20.50
260
255
Gain - dB
Oscillator Frequency - kHz
50
Temperature - °C
250
245
20.00
240
235
19.50
230
225
220
19.00
5
10
15
20
25
30
35
VDD - V
40
45
50
55
5
10
15
20
Figure 9.
25
30 35
VDD - V
40
45
50
55
Figure 10.
POWER-STAGE GAIN vs TEMPERATURE
POWER-STAGE GAIN vs TEMPERATURE
20.50
20.50
20.30
20.45
VDD = 24 V
VDD = 4.5 V
20.40
VDD = 12 V
19.90
19.70
Gain - dB
Gain - dB
20.10
20.35
VDD = 52 V
20.30
19.50
20.25
-50
-25
0
25
50
75
100
125
-50
Temperature - °C
0
25
50
Temperature °C
Figure 11.
6
-25
Figure 12.
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100
125
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TYPICAL CHARACTERISTICS (continued)
MODULATOR RAMP AMPLITUDE vs TEMPERATURE
MODULATOR RAMP AMPLITUDE vs TEMPERATURE
3
2.8
2.6
VDD = 24 V
2.4
Vramp - V
Vramp - V
2.2
2
1.8
1.6
1.4
VDD = 12 V
1.2
1
-50
-25
0
25
50
75
100
6
5.8
5.6
5.4
5.2
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
125
VDD = 52 V
VDD = 36 V
-50
-25
0
25
50
75
100
125
Temperature - °C
Temperature - °C
Figure 13.
Figure 14.
MODULATOR RAMP AMPLITUDE vs VDD
FEEDBACK AMPLIFIER INPUT BIAS CURRENT
vs
TEMPERATURE
160
6
TJ = 25°C
140
5
120
4
IIB - nA
VRAMP - V
100
3
80
60
2
40
1
20
0
0
5
10
15
20
25
30
35
VDD - V
40
45
50
55
-50
-25
0
25
50
75
100
125
Temperature - °C
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
COMP SOURCE CURRENT
vs
TEMPERATURE
COMP SINK CURRENT vs TEMPERATURE
3.5
300
3
Output Current - mA
Output Current - mA
250
200
150
100
50
2.5
2
1.5
1
0.5
0
0
-50
-25
0
25
50
75
100
125
-50
-25
25
50
75
Temperature - °C
Figure 17.
Figure 18.
GATE DRIVE VOLTAGE vs TEMPERATURE
100
125
GATE DRIVE VOLTAGE vs VIN
8.4
8
VDD = 12 V
7.8
VJ = 25°C
8.2
7.6
VGATE - V
0
Temperature - °C
8
7.4
7.8
7.2
7.6
7
7.4
6.8
7.2
6.6
7
6.4
-50
-25
0
25
50
75
100
5
125
10
15
20
Temperature - °C
Figure 19.
40
45
50
55
REFERENCE VOLTAGE vs TEMPERATURE
720
718
718
716
716
714
714
712
VFB - mV
VFB - mV
REFERENCE VOLTAGE vs TEMPERATURE
VDD = 24 V
710
708
712
710
VDD = 4.5 V
708
706
VDD = 50 V
704
704
702
702
700
VDD = 12 V
700
-50
8
30 35
VDD - V
Figure 20.
720
706
25
-25
0
25
50
75
100
125
-50
-25
0
25
50
Temperature - °C
Temperature - °C
Figure 21.
Figure 22.
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100
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GENERAL INFORMATION
Overview
The TPS40200 is a nonsynchronous controller with a built-in 200-mA driver, designed to drive high-speed
P-channel FETS up to 500 kHz. Its small size combined with complete functionality makes the part both versatile
and easy to use.
The controller uses a low-value current-sensing resistor in series with the input voltage and the power FET
source connection to detect switching current. When the voltage drop across this resistor exceeds 100 mV, the
part enters a hiccup fault mode at approximately 2% of the operating frequency.
The part uses voltage feedback to an error amplifier that is biased by a precision 700-mV reference.
Feed-forward compensation from the input keeps the pulse-width modulator (PWM) gain constant over the full
input voltage range, eliminating the need to change frequency compensation for different input voltages.
The part also incorporates a soft-start feature where the output follows a slowly rising soft-start voltage,
preventing output-voltage overshoot.
Programming the Operating Frequency
The operating frequency of the controller is determined by an external resistor, RRC, that is connected from the
RC pin to VDD and a capacitor attached from the RC pin to ground. This connection, and the two oscillator
comparators inside the IC, are shown in Figure 23. The oscillator frequency can be calculated from the following
equation:
1
f SW =
R RC ´ C RC ´ 0.105
(1)
Where:
fSW = Clock frequency
RRC = Timing resistor value (in Ω)
CRC = Timing capacitor value (in F)
RRC must be kept large enough that the current through it does not exceed 750 µA when the internal switch
(shown in Figure 23) is discharging the timing capacitor. This condition may be expressed by:
VIN
£ 750 mA
R RC
(2)
Synchronizing the Oscillator
Figure 23 shows the functional diagram of the TPS40200 oscillator. When synchronizing the oscillator to an
external clock, RC must be pulled below 150 mV for 20 ns or more. The external clock frequency must be higher
than the free-running frequency of the converter as well. When synchronizing the controller, if RC is held low for
an excessive amount of time, erratic operation may occur. The maximum amount of time that RC should be held
low is 50% of a nominal output pulse, or 10% of the period of the synchronization frequency.
Under circumstances where the input voltage is high and the duty cycle is less than 50%, a Schottky diode
connected from RC to an external clock may be used to synchronize the oscillator. The cathode of the diode is
connected to RC. The trip point of the oscillator is set by an internal voltage divider to be 1/10 of the input
voltage. The clock signal must have an amplitude higher than this trip point. When the clock goes low, it allows
the reset current to restart the RC ramp, synchronizing the oscillator to the external clock. This provides a
simple, single-component method for clock synchronization.
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GENERAL INFORMATION (continued)
VDD
VIN
8
+
CLK
RRC
S
Q
RC
RC
R Q
1
Ext. Frequency
Synchronization
(optional)
+
CRC
+
GND
150 mV
5
Figure 23. Oscillator Functional Diagram
VDD
VIN
Amplitude > VIN ¸ 10
Duty cycle < 50%
8
+
CLK
RRC
S
Q
RC
RC
R Q
1
Frequency > Controller
Frequency
+
CRC
+
GND
150 mV
5
Figure 24. Diode-Connected Synchronization
10
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GENERAL INFORMATION (continued)
Current-Limit Resistor Selection
As shown in Figure 27, a resistor in series with the power MOSFET sets the overcurrent protection level. Use a
low-inductance resistor to avoid problems with ringing signals and nuisance tripping. When the FET is on and
the controller senses 100 mV or more drop from the VDD pin to the ISNS pin, an overcurrent condition is
declared. When this happens, the FET is turned off and, as shown in Figure 28, the soft-start capacitor is
discharged. When the soft-start capacitor reaches a level below 150 mV, the converter clears the overcurrent
condition flag and attempts to restart. If the condition that caused the overcurrent event to occur is still present
on the output of the converter (see Figure 27), another overcurrent condition is declared and the process
repeats indefinitely. Figure 27 shows the soft-start capacitor voltage during an extended output fault condition.
The overall duty cycle of current conduction during a persistent fault is approximately 2%.
Figure 25. Typical Soft-Start Capacitor and VOUT During Overcurrent
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GENERAL INFORMATION (continued)
VS-S
TPS40200
VIN
8
+ 100 mV
100 kW
+
ISNS
Fault
7
S Q
R Q
SS
2
Reset
Fault
+
Latched
Fault
300
kW
+ 300 mV
EAMP
SS Ref
Enable
EAMP
+ 150 mV
GND
5
Figure 26. Current-Limit Reset
If necessary, a small R-C filter can be added to the current-sensing network to reduce nuisance tripping due to
noise pickup. This filter also can be used to trim the overcurrent trip point to a higher level with the addition of a
single resistor. See Figure 27. The nominal overcurrent trip point using the circuit of Figure 27 is described as:
V
R + R F2
IOC = ILIM ´ F1
R ILIM
R F2
(3)
Where:
IOC = Overcurrent trip point, peak current in the inductor
VILIM = Overcurrent threshold voltage for the TPS40200, typically 100 mV
RILIM = Value of the current sense resistor (in Ω)
RF1 and RF2 = Values of the scaling resistors (in Ω)
The value of the capacitor is determined by the nominal pulse width of the converter and the values of the
scaling resistors RF1 and RF2. It is best not to have the time constant of the filter longer than the nominal pulse
width of the converter, otherwise a substantial increase in the overcurrent trip point occurs. Using this constraint,
the capacitor value may be bounded by: .
VO
R ´ R f2
Cf £
÷ f1
VIN ´ f SW R f1 + R f2
(4)
Where:
Cf = Value of the current-limit filter capacitor (in F)
VO = Output voltage of the converter
VIN = Input voltage to the converter
fSW = Converter switching frequency
Rf1 and Rf2 = Values of the scaling resistors (in Ω)
12
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GENERAL INFORMATION (continued)
VIN
RILIM
RF1
TPS40200
VDD 8
CF
RF2
ISNS 7
GDRV 6
NOTE: The current-limit resistor and its associated circuitry can be eliminated and pins 7 and 8 shorted. However, the result
of this may result in damage to the part or PC board in the event of an overcurrent event.
Figure 27. Current-Limit Adjustment
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GENERAL INFORMATION (continued)
MOSFET Gate Drive
The output driver sinking current is approximately 200 mA and is designed to drive P-channel power FETs.
When the driver pulls the gate charge of the FET, it is controlling to –8 V, the drive current folds back to a low
level so that high power dissipation only occurs during the turnon period of the FET. This feature is particularly
valuable when turning on a FET at high input voltages, where leaving the gate drive current on would otherwise
cause unacceptable power dissipation.
Undervoltage Lockout (UVLO) Protection
UVLO protection ensures proper startup of the device only when the input voltage has exceeded minimum
operating voltage. Undervoltage protection incorporates hysteresis, which eliminates hiccup starting in cases
where input supply impedance is high.
VDD
8
TPS40200
545k
+
RUN
200K
+
1.3V
36K
GND
5
Figure 28. Undervoltage Lockout
Undervoltage protection ensures proper startup of the device only when the input voltage has exceeded
minimum operating voltage. The UVLO level is measured at the VDD pin with respect to GND. Startup voltage is
typically 4.3 V, with approximately 200 mV of hysteresis. The part shuts off at a nominal 4.1 V. As shown in
Figure 28, when the input VDD voltage rises to 4.3 V , the 1.3-V comparator’s threshold voltage is exceeded and
a RUN signal occurs. Feedback from the output closes the switch and shunts the 200-kΩ resistor so that an
approximate 200-mV lower voltage, or 4.1 V, is required before the part shuts down.
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GENERAL INFORMATION (continued)
Programming the Soft-Start Time
An external capacitor, CSS, connected from the soft-start (SS) pin to ground controls the TPS40200 soft-start
interval. An internal charging resistor connected to VDD produces a rising reference voltage, which is connected
though a 700-mV offset to the reference input of the TPS40200 error amplifier. When the soft-start capacitor
voltage (VCSS) is below 150 mV, there is no switching activity. When VCSS rises above the 700-mV offset, the
error amplifier starts to follow VSST – 700 mV, and uses this rising voltage as a reference. When VCSS reaches
1.4 V, the internal reference takes over, and further increases have no effect. An advantage of initiating a slow
start in this fashion is that the controller cannot overshoot because its output follows a scaled version of the
controller's reference voltage. A conceptual drawing of the circuit that produces these results is shown in
Figure 29. A consequence of the 700-mV offset is that the controller does not start switching until the VCSS has
charged up to 700 mV. The output remains at 0 V during the resulting delay. When VCCS exceeds the 700-mV
offset, the TPS40200 output follows the soft-start time constant. Once above 1.4 V, the 700-mV internal
reference takes over, and normal operation begins.
TPS40200
VSST
105 kW
700 mV
VSST (offset)
SS
Error Amplifier
+
2
Ideal
Diodes
+
Css
+
FB
700 mV
4
COMP
3
Figure 29. Soft-Start Circuit
The slow-start time should be more (slower) than the time constant of the output LC filter. This time constraint
may be expressed as:
t S ³ 2p ´ L O ´ C O
(5)
The calculation of the soft-start interval is simply the time it takes the RC network to exponentially charge from
0 V to 1.4 V. An internal 105-kΩ charging resistor is connected from the SS pin to VSST. For applications where
the voltage is above 8 V, an internal regulator clamps the maximum charging voltage to 8 V.
The result of this is a formula for the start-up time, as given by:
æ VSST
ö
÷
t SS = R c ´ CSS ´ ln çç
÷
è VSST - 1.4 ø
(6)
Where:
tSS = Required soft-start time (in seconds)
CSS = Soft-start capacitor value (in F)
Rc = Internal soft-start charging resistor (105 kΩ nominal)
VSST = Input voltage up to a maximum of 8 V
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GENERAL INFORMATION (continued)
Voltage Setting and Modulator Gain
Since the input current to the error amplifier is negligible, the feedback impedance can be selected over a wide
range. Knowing that the reference voltage is 708 mV, pick a convenient value for R1 and then calculate the
value of R2 from the following formula:
æ
R ö
VOUT = 0.708çç1 + 2 ÷÷
è R1 ø
(7)
Vg
L
KPWM
VOUT
d
Cout
Vc
Rload
R2
+
Vref
R1
Figure 30. System Gain Elements
The error amplifier has a DC open-loop gain of at least 60 dB, with a minimum of a 1.5-MHz gain bandwidth
product, which gives the user flexibility with respect to the type of feedback compensation used for this particular
application. The gain selected by the user at the crossover frequency is set to provide an overall unity gain for
the system. The crossover frequency should be selected so that the error amplifier open-loop gain is high with
respect to the required closed-loop gain. This ensures that the amplifier response is determined by the passive
feedback elements.
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EXAMPLE APPLICATIONS
Application 1: Buck Regulator, 8-V to 12-V Input, 3.3 V or 5 V at 2.5-A Output
Overview
The buck regulator design shown in Figure 31 illustrates the use of the TPS40200. It delivers 2.5 A at either
3.3 V or 5 V as selected by a single feedback resistor. It achieves approximately 90% efficiency at 3.3 V and
94% at 5 V. A discussion of design tradeoffs and methodology is included to serve as a guide to the successful
design of forward converters using the TPS40200.
The Bill of Materials (BOM) for this application is given in Table 2. The efficiency and load regulation from
boards built from this design are shown in Figure 32 and Figure 33. Gerber files and additional application
information are available from the factory.
+
+
Notes
D3 : Do not populate. SOT 23 Common Cathode Dual Schottky
R6 =26.7k for 3.3 Vout, R6 = 16.2k for 5.0 Vout
Figure 31. 8-V to 16-V VIN Step-Down Buck Converter
100
100
VIN = 8 V
VIN = 12 V
VIN = 16 V
90
80
Efficiency - %
Efficiency - %
90
70
60
VIN = 8 V
VIN = 12 V
VIN = 16 V
80
70
60
VOUT = 5 V
VOUT = 3.3 V
50
0
0.5
1
1.5
2
Load Current - A
2.5
Figure 32. Full-Load Efficiency at 5-V VOUT
3
50
0
0.5
1
1.5
2
Load Current - A
2.5
3
Figure 33. Full-Load Efficiency at 3.3-V VOUT
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EXAMPLE APPLICATIONS (continued)
Component Selection
Table 1. Design Parameters
SYMBOL
PARAMETER
VIN
TEST CONDITION
Input voltage
MIN
NOM
MAX
8
12
16
UNIT
V
V
Output voltage
IOUT at 2.5 A
3.200
3.3
3.400 (1)
Line regulation
±0.2% VOUT
3.293
3.3
3.307
V
Load regulation
±0.2% VOUT
3.293
3.3
3.307
V
Output voltage
IOUT at 2.5 A
4.85
5
5.150 (1)
V
Line regulation
±0.2% VOUT
4.990
5
5.010
V
Load regulation
±0.2% VOUT
4.990
5
5.010
VRIPPLE
Output ripple voltage
At maximum output current
VOVER
Output overshoot
VUNDER
Output undershoot
IOUT
Output current
ISCP
Short-circuit current trip point
VOUT
VOUT
FS
(1)
mV
For 2.5-A load transient from 2.5 A to 0.25 A
100
mV
For 2.5-A load transient from 0.25 A to 2.5 A
60
At nominal input voltage and maximum output
current
Efficiency
V
60
Switching frequency
mV
0.125
2.5
A
3.75
5.00
A
90
%
300
kHz
Set-point accuracy is dependent on external resistor tolerance and the IC reference voltage. Line and load regulation values are
referenced to the nominal design output voltage.
FET Selection Criteria
•
•
•
The maximum input voltage for this application is 16 V. Switching the inductor causes overshoot voltages
that can equal the input voltage. Since the RDSON of the FET rises with breakdown voltage, select a FET with
as low a breakdown voltage as possible. In this case, a 30-V FET was selected.
The selection of a power FET’s size requires knowing both the switching losses and dc losses in the
application. AC losses are all frequency dependent and directly related to device capacitances and device
size. Conversely, dc losses are inversely related to device size. The result is an optimum where the two
types of losses are equal. Since device size is proportional to RDSON, a starting point is to select a device
with an RDSON that results in a small loss of power relative to package thermal capability and overall
efficiency objectives.
In this application, the efficiency target is 90% and the output power 8.25 W. This gives a total power-loss
budget of 0.916 W. Total FET losses must be small, relative to this number.
The dc conduction loss in the FET is given by:
2
PDC = Ir ms ´ R DSON
(8)
The rms current is given by:
1
2
é æ
DIpp ö÷ù 2
2
ú
Irms = êD ´ ç IOUT +
ê ç
12 ÷ú
è
ø
ë
û
18
(9)
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Where:
DIpp = DV ´ D ´
tS
Ll
DV = VIN - VOUT - (DCR + R DSON ) ´ IOUT
RDSON = FET on-state resistance
DCR = Inductor dc resistance
D = Duty cycle
tS = Reciprocal of the switching frequency
Using the values in this example, the dc power loss is 129 mW. The remaining FET losses are:
• PSW – Power dissipated while switching the FET on and off
• Pgate – Power dissipated driving the FET gate capacitance
• PCOSS – Power switching the FET output capacitance
The total power dissipated by the FET is the sum of these contributions:
PFET = PSW + Pgate + PCOSS + PRDSON
The P-channel FET used in this application is an FDC654P, with the following characteristics:
trise = 13 × 10–9
COSS = 83 × 10–12
tfall = 6 × 10–9
Qg = 9 nC
RDSON = 0.1 Ω
Vgate = 1.9 V
Qgd = 1.2 × 10
Qgs = 1.0 × 10–9
–9
Using these device characteristics and the following formulas produces:
ö f
æ
f
PSW = S ´ çç VIN ´ Ipk ´ t CHON ÷÷ + S VIN ´ Ipk ´ t CHOFF
= 10 mW
2 è
ø 2
(
)
(10)
Where:
t CHON =
Q GD ´ R G
VIN - VTH
and
t CHOFF =
Q GD ´ R G
VIN
are the switching times for the power FET.
PGATE = Q G ´ VGATE ´ f S = 22 mW
2
PCOSS =
C OSS ´ VIN _ MAX ´ f S
2
= 2 mW
IG = QG × fS = 2.7 mA is the gate current
The sum of the switching losses is 34 mW and is comparable to the 129-mW dc losses. At added expense, a
slightly larger FET would be better because the dc loss would drop and the ac losses would increase, with both
moving toward the optimum point of equal losses.
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Rectifier Selection Criteria
• Rectifier breakdown voltage
The rectifier has to withstand the maximum input voltage which, in this case, is 16 V. To allow for switching
transients that can approach the switching voltage, a 30-V rectifier was selected.
• Diode size
The importance of power losses from the Schottky rectifier (D2) is determined by the duty cycle. For a low
duty-cycle application, the rectifier is conducting most of the time, and the current that flows through it times
its forward drop can be the largest component of loss in the entire controller. In this application, the duty
cycle ranges from 20% to 40%, which in the worst case means that the diode is conducting 80% of the time.
Where efficiency is of major importance, choose a diode with as low a forward drop as possible. In more
cost-sensitive applications, size may be reduced to the point of the thermal limitations of the diode package.
The device in this application is large, relative to the current required by the application. In a more
cost-sensitive application, a smaller diode in a less-expensive package provides a less-efficient, but
appropriate, solution.
The device used has the following characteristics:
• Vf = 0.3 V at 3 A
• Ct = 300 pF (Ct = the effective reverse-voltage capacitance of the synchronous rectifier, D2)
The two components of the losses from the diode D2 are:
I
æ
ö
PCOND = Vf ´ çç IOUT + RIPPLE ÷÷ ´ (1 - D) = 653 mW
4
è
ø
(11)
Where:
D = Duty cycle
IRIPPLE = Ripple current
IOUT = Output current
VF = Forward voltage
PCOND = Conduction power loss
The switching capacitance of this diode adds an AC loss, given by:
P SW + 1 [C (V IN ) V f)2 f] + 6.8 mW
2
(12)
This additional loss raises the total loss to: 660 mW.
At an output voltage of 3.3 V, the application runs at a nominal duty cycle of 27%, and the diode is conducting
72.5% of the time. As the output voltage is moved up to 5 V, the on time increases to 46%, and the diode is
conducting only 54% of the time during each clock cycle. This change in duty cycle proportionately reduces the
conduction power losses in the diode. This reduction may be expressed as:
æ 0.54 ö
660 ç
÷ = 491 mW
è0.725ø
(13)
for a savings in power of 660 – 491 = 169 mW.
To illustrate the relevance of this power savings, the full-load module efficiency was measured for this
application at 3.3 V and 5 V. The 5-V output efficiency is 92% versus 89% for the 3.3-V design. This difference
in efficiency represents a 456-mW reduction in losses between the two conditions. This 169-mW power-loss
reduction in the rectifier represents 37% of the difference.
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Inductor Selection Criteria
The TPS40200 P-channel FET driver facilitates switching the power FET at a high frequency. This, in turn,
enables the use of smaller, less-expensive inductors as shown in this 300-kHz application. Ferrite, with its good
high-frequency properties, is the material of choice. Several manufacturers provide catalogs with inductor
saturation currents, inductance values, and LSRs (internal resistance) for their various-sized ferrites.
In this application, the part must deliver a maximum current of 2.5 A. This requires that the output inductor
saturation current be above 2.5 A plus one-half the ripple current caused during inductor switching. The value of
the inductor determines this ripple current. A low value of inductance has a higher ripple current that contributes
to ripple voltage across the resistance of the output capacitors. The advantages of a low inductance are a higher
transient response, lower DCR, higher saturation current, and a smaller, less-expensive part. Too low an
inductor, however, leads to higher peak currents that ultimately are bounded by the overcurrent limit set to
protect the output FET or by output ripple voltage. Fortunately, with low-ESR ceramic capacitors on the output,
the resulting ripple voltage for relatively high ripple currents can be small.
For example, a single 1-µF 1206-sized 6.3-V ceramic capacitor has an internal resistance of 2 Ω at 1 MHz. For
this 2.5-A application, a 10% ripple current of 0.25 A produces a 50-mV ripple voltage. This ripple voltage may
be further reduced by additional parallel capacitors.
The other bound on inductance is the minimum current at which the controller enters discontinuous conduction.
At this point, inductor current is zero. The minimum output current for this application is specified at 0.125 A.
This average current is one-half the peak current that must develop during a minimum on time. The conditions
for minimum on time are high line and low load, using:
V - VOUT
LMAX = IN
´ t ON = 32 mH
IPEAK
(14)
Where:
VIN = 16 V
VOUT = 3.3 V
IPEAK =0.25 A
tON = 0.686 µs
BLK
tON
3. 3 V
1
´
is given by 300 kHz 16 V
The inductor used in the circuit is the closest standard value of 33 µH. This is the maximum inductance that can
be used in the converter to deliver the minimum current, while maintaining continuous conduction.
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Output Capacitance
In order to satisfy the output voltage overshoot and undershoot specifications, there must be enough output
capacitance to keep the output voltage within the specified voltage limits during load current steps.
In a situation where a full load of 2.5 A within the specified voltage limits is suddenly removed, the output
capacitor must absorb energy stored in the output inductor. This condition may be described by realizing that the
energy stored in the inductor must be suddenly absorbed by the output capacitance. This energy relationship is
written as:
1 L I 2 v 1 [C (V 2 * V 2)]
O O
O
OS
O
2
2
(15)
Where:
VOS = Allowed overshoot voltage above the output voltage
LO = Inductance
IO = Output current
CO = Output capacitance
VO = Output voltage
In this application, the worst-case load step is 2.25 A and the allowed overshoot is 100 mV. With a 33-µH output
inductor, this implies an output capacitance of 249 µF for a 3.3-V output and 165 µF for a 5-V output.
When the load increases from minimum to full load, the output capacitor must deliver current to the load. The
worst case is for a minimum on time that occurs at 16 V in and 3.3 V out and minimum load. This corresponds to
an off time of (1 – 0.2) times the period 3.3 µs, and is the worst-case time before the inductor can start supplying
current. This situation may be represented by:
t
DVO < DIO ´ OFFMAX
CO
(16)
Where:
∆ VO = Undershoot specification of 60 mV
∆IO = Load current step
tOFFMAX = Maximum off time
This condition produces a requirement of 100 µf for the output capacitance. The larger of these two
requirements becomes the minimum value of output capacitance.
The ripple current develops a voltage across the ESR of the output capacitance, so another requirement on this
component is that its ESR be small relative to the ripple voltage specification.
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Switching Frequency
The TPS40200 has a built-in, 8-V, 200-mA, P-channel FET driver output that facilitates using P-channel
switching FETs. A clock frequency of 300 kHz was chosen as a switching frequency which represents a
compromise between a high frequency that allows the use of smaller capacitors and inductors, but one that is
not so high as to cause excessive transistor switching losses. As previously discussed, an optimum frequency
can be selected by picking a value where the dc and switching losses are equal.
The frequency is set by using the design formula given in the FET Selection Criteria section.
1
RRC ´ CRC =
0.105 ´ fSW
(17)
Where:
RRC = Timing resistor value (in ohms), or RRC = 68.1 Ω
CRC = Timing capacitor value (in F), or C5 = 470 pF
fSW = Desired switching frequency (in Hz) which, in this case, calculates to 297 kHz
At a worst case of 16 V, the timing resistor draws about 250 µA, which is well below the 750 µA maximum that
the circuit can pull down.
Programming the Overcurrent Threshold Level
The current limit in the TSP40200 is triggered by a comparator with a 100-mV offset, whose inputs are
connected across a current-sense resistor between VCC and the source of the high-side switching FET. When
current in this resistor develops more than 100 mV, the comparator trips and terminates the output gate drive.
In this application, the current-limit resistor is set by the peak output-stage current, which consists of the
maximum load current plus one-half the ripple current (in this case, 2.5 + 0.125 = 2.625 A). To accommodate
tolerances, a 25% margin is added, giving a 3.25-A peak current. Using the equation below then yields a value
for RILIM of 0.30 Ω.
Current sensing in a switching environment requires attention to both circuit-board traces and noise pickup. In
Figure 34, a small RC filter has been added to the circuit to prevent switching noise from tripping the
current-sense comparator. The requirements of this filter are board dependent, but with the layout used in this
application, no spurious overcurrent was observed.
VIN
RILIM
RF1
TPS40200
VDD
8
CF
RF2
ISNS 7
GDRV 6
ILIM =
0. 1
R ILIM
Figure 34. Overcurrent Trip Circuit for RF2 Open
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Soft-Start Capacitor
The soft-start interval is given (in pF) by:
t SS
C SS =
´ 10 3
æ VSST ö
÷
R ´ ln çç
÷
è VSST - 1.4 ø
(18)
Where:
R = Internal 105-kΩ charging resistor
VCC = Input voltage up to 8 V, where the charging voltage is internally clamped to 8 V maximum
VOS = 700 mV and, because the input voltage is 12 V, VSST = 8 V
The oscilloscope output (see Figure 35) shows the expected delay at the output (middle trace) until the soft-start
node (bottom trace) reaches 700 mV. At this point, the output rises following the exponential rise of the soft-start
capacitor voltage until the soft-start capacitor reaches 1.4 V and the internal 700-mV reference takes over. This
total time is approximately 1 ms, which agrees with the calculated value of 0.95 ms where the soft-start
capacitance is 0.047 µF.
A.
Channel 1 is the output voltage rising to 3.3 V.
B.
Channel 2 is the soft-start (SS) pin.
Figure 35. Soft Start Showing Output Delay and Controlled Rise to Programmed Output Voltage
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Frequency Compensation
The four elements that determine the system overall response are discussed in the following paragraphs. The
gain of the error amplifier (KEA) is the first of three elements. Its output develops a control voltage, which is the
input to the PWM.
The TPS40200 has a unique modulator that scales the peak-to-peak amplitude of the PWM ramp to be 0.1
times the value of the input voltage. Since modulator gain is given by VIN divided by VRAMP, the modulator gain is
10 and is constant at 10 (20 dB) over the entire specified input voltage range.
The last two elements that affect system gain are the transfer characteristic of the output LC filter and the
feedback network from the output to the input to the error amplifier.
These four elements may be expressed by the following expression that represents the system transfer function
(see Figure 36).
TV (S ) = K FB ´ K EA (S) ´ K PWM ´ X LC (S)
(19)
Where:
KFB = Output voltage setting divider
KEA = Error amplifier feedback
KPWM = Modulator gain
XLC = Filter transfer function
vg
Vref
+
KEA
-
vc
KPWM
d
XLC
vo
Tv(s)
KFB
Figure 36. Control Loop
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Figure 37 shows the feedback network used in this application. This is a type-2 compensation network, which
gives a combination of good transient response and phase boost for good stability. This type of compensation
has a pole at the origin, causing a –20-dB/decade (–1) slope, followed by a zero that causes a region of flat
gain, followed by a final pole that returns the gain slope to –1. The Bode plot in Figure 38 shows the effect of
these poles and zeros.
The procedure for setting up the compensation network is as follows:
1. Determine the break frequency of the output capacitor.
2. Select a zero frequency well below this break frequency.
3. From the gain bandwidth of the error amplifier, select a crossover frequency where the amplifier gain is
large, relative to expected closed-loop gain.
4. Select a second zero well above the crossover frequency, which returns the gain slope to a –1 slope.
5. Calculate the required gain for the amplifier at crossover
Be prepared to iterate this procedure to optimize the pole and zero locations as needed.
C7
C8
R8
R10
+
R6
VREF
Figure 37. Error Amplifier Feedback Elements
The frequency response of this converter is largely determined by two poles that arise from the LC output filter
and a higher-frequency zero caused by the ESR of the output capacitance. The poles from the output filter
cause a 40-dB/decade rolloff with a phase shift approaching 180°, followed by the output capacitor zero that
reduced the rolloff to –20 dB and gives a phase boost back toward 90°. In other nomenclature, this is a –2 slope
followed by a –1 slope. The two zeros in the compensation network act to cancel the double pole from the
output filter The compensation network’s two poles produce a region where the error amplifier is flat and can be
set to a gain, such that the overall gain of the system is 0 dB. This region is set so that it brackets the system
crossover frequency.
Gain - dB
P1
Error Amplifier Type-2
Compensation
Slope = -1
z1
p2
A V2
A V1
f1
f2
Figure 38. Error Amplifier Bode Plot
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In order to properly compensate this system, it is necessary to know the frequencies of its poles and zeros.
Step 1
The break frequency of the output capacitor is given by:
Fesr =
1
2pR esr C
(20)
Where:
L = 33 µH
C = 221 µF
Because of the ESR of the output capacitor, this output filter has a single-pole response above the 1.8-kHz
break frequency of the output capacitor and its ESR. This simplifies compensation since the system becomes
essentially a single-pole system.
Step 2
The first zero is place well below the 1.8-kHz break frequency of the output capacitor and its ESR. Phase boost
from this zero is shown in Figure 39.
1
fZ1 =
2pR 8C8
(21)
Where:
R8 = 100 kΩ
C8 = 1500 pF
FZ1 = 354 Hz
Step 3
From a minimum gain bandwidth product of 1.5 MHz, and knowing it has a 20-dB/decade rolloff, the gain of the
error amplifier is 33 dB at 35 kHz. This approximate frequency is chosen for a crossover frequency to keep the
amplifier gain contribution to the overall system gain small.
Step 4
The second zero is placed well above the 35-kHz crossover frequency.
1
fP3 =
´ (C7 + C8 )
2p ´ C 7 ´ C 8 ´ R 8
(22)
Where:
R8 = 300 kΩ
C7 = 10 pF
C8 = 1500 pF
fP3 = 53 kHz
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Step 5
Calculate the three other gain elements of the system to determine the gain required by the error amplifier at
35-kHz to make the overall gain 0 dB:
TV (S ) = K FB ´ K EA (S) ´ K PWM ´ X LC (S)
(23)
Where:
KFB = Output voltage setting divider
KEA = Error amplifier feedback
KPWM = Modulator gain
XLC = Filter transfer function
The output filter transfer characteristic is given by the following:
Z OUT (S)
X LC (S) =
Z OUT (S) + Z (S) + R SW ´ D + R SR ´ (1 - D)
(24)
Where:
ZOUT = Parallel combination of output capacitor(s) and the load
ZOUT and Zl should include parasitic R and L.
Evaluating the response at 35-kHz gives the following:
• The full current output load at 3.3 V is 1.32 Ω, and is in parallel with the 0.4-Ω ESR of the output capacitor.
• Including the 400 mΩ of ESR, the capacitive impedance is 14 mΩ, and ZOUT = 414 mΩ.
• The impedance of the inductor is Zl = 1.659 Ω.
• XLC(S) = 0.033, or –29.6 dB
The feedback network has a gain to the error amplifier given by:
R
K fb = 10
R6
(25)
Where:
R6 = 26.7 kΩ
Using the values in this application, Kfb = 11.4 dB.
The modulator has a gain of 10 that is flat to well beyond 35 kHz, so KPWM = 20 dB.
The amplifier gain, including the feedback gain, Kfb, can be approximated by this expression:
VO
- Av OL
(S) =
Z (S )
R10
VIN
1+ I
+
´ (1 + Av OL )
R6
Z f (S )
(26)
Where:
ZI = R10
Zf = Parallel combination of C7 in parallel with the sum of R8 and the impedance of C8
The gain required to achieve 0-dB system gain is simply the sum of the other three gains: –(–29.6 + 11.4 + 20)
= 1.8 dB. With an open-loop gain of 33 dB, the closed-loop gain of the amplifier is 0.8, or –1.66 dB, which gives
a 0.13-dB gain at 35 kHz.
Figure 39 shows the result of the compensation. The crossover frequency is 35 kHz, and the phase margin is
45°. The response of the system is dominated by the ESR of the output capacitor and is exploited to produce an
essentially single-pole system with simple compensation.
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50
180
40
160
30
140
120
Gain
GAIN
10
100
0
80
Phase
-10
60
-20
40
-30
PHASE - DEGREES
20
20
-40
-50
0.1
1
10
100
0
1000
CROSSOVER FREQUENCY - kHz
Figure 39. Overall System Gain and Phase Response
Figure 39 also shows the phase boost that gives the system a crossover phase margin of 47°.
The Bill of Materials (BOM) for this application is given in Table 2. The efficiency and load regulation from
boards built from this design are shown in Figure 44 and Figure 45. Gerber PC layout files and additional
application information are available from the factory.
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Table 2. Bill of Materials, Buck Regulator, 12 V to 3.3 V and 5 V
REF.
DES.
VALUE
DESCRIPTION
SIZE
MFR.
PART NUMBER
C1
100 µF
Capacitor, Aluminum, SM, 25-V, 0.3 Ω
8 x 10 mm
Sanyo
20SVP100M
C12
220 µF
Capacitor, Aluminum, SM, 6.3-V, 0.4 Ω
8 x 6.2 mm
Panasonic
EEVFC0J221P
C13
100 pF
Capacitor, Ceramic, 50V, [COG], [20%]
603
muRata
Std.
C3
0.1 pF
Capacitor, Ceramic, 50V, [X7R], [20%]
603
muRata
Std.
C2, C11
1 µF
Capacitor, Ceramic, 50V, [X7R], [20%]
603
muRata
Std.
C4, C5
470 pF
Capacitor, Ceramic, 50V, [X7R], [20%]
603
muRata
Std.
C6
0.047 µF
Capacitor, Ceramic, 50V, [X7R], [20%]
603
muRata
Std.
C7
10 pF
Capacitor, Ceramic, 50V, [COG], [20%]
603
muRata
Std.
C8
1500 pF
Capacitor, Ceramic, 50V, [X7R], [20%]
603
muRata
Std.
D1
12 V
Diode, Zener, 12-V, 350-mW
SOT23
Diodes, Inc.
BZX84C12T
Diode, Schottky, 30-A, 30-V
SMC
On Semi
MBRS330T3
Diode Zener 12-V 5 mA
VMD2
Rohm
VDZT2R12B
Terminal Block 4-Pin 15-Amp 5.1-mm
0.8 x 0.35
OST
ED2227
Header, 2-pin, 100-mil spacing, (36-pin strip)
0.100 x 2
Sullins
PTC36SAAN
Inductor, SMT, 3.2 A, .039 Ω
12.5 x 12.5 mm
TDK
SLF12575T330M3R2PF
PCB
2 Layer PCB 2 Ounce Cu
1.4 x 2.12 x
0.062
Q1
Trans, N-Chan Enhancement Switching, 50 mA
SOT-143B
Phillips
BSS83
Q2
MOSFET, P-ch, 30-V, 3.6-A, 75-mΩ
SuperSOT-6
Fairchild
FDC654P
U1
IC, Low Cost Non-Sync Buck Controller
SO-8
TI
TPS40200D
D2
D3
12 V
J1,J3
J2
L1
33 µH
HPA164
R1
10 Ω
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R10
100 kΩ
Resistor, Chip, , 1/16W, 1%
603
Std.
Std.
R11
10 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R12
1 MΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R13
49.9 Ω
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R2
0.02 Ω
Resistor, Chip, W, 5%
2010
Std.
Std.
R3
68.1 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R4
2.0 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R5
0Ω
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R6
26.7 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R7
1.0 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
R8
300 kΩ
Resistor, Chip, 1/16 W, 1%
603
Std.
Std.
PC Board Plots
Figure 40 through Figure 42 show the design of the TPS40200EVM-001 printed circuit board. The design uses
2-layer, 2-oz copper and is 1.4-in × 2.3-in in size. All components are mounted on the top side to allow the user
to easily view, probe, and evaluate the TPS40200 control IC in a practical application. Moving components to
both sides of the PCB or using additional internal layers can offer additional size reduction for space-constrained
applications.
30
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Figure 40. TPS40200EVM-001 Component Placement (Viewed From Top)
Figure 41. TPS40200EVM001 Top Copper (Viewed From Top)
Figure 42. TPS40200EVM-001 Bottom Copper (X-Ray View From Top)
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Application 2: 18-V to 50-V Input, 16 V at 1-A Output
This is an example of using the TPS40200 in a higher-voltage application. The output voltage is 16 V at 1 A,
with an 18-V to 50-V input. Module boards built to this schematic, and a test report, are available from the
factory. The following shows some of the test results.
Test Results
Figure 44 and Figure 45 show some of the performance obtained from this application. Further information and
support material is available from the factory.
+
+
Figure 43. Buck Converter (VIN = 18 V to 50 V; VOUT = 16 V at 1 A)
100
16.500
VIN = 24 V
16.450
95
Output Voltage - V
Efficiency - %
16.400
VIN = 48 V
90
85
80
16.350
VIN = 48 V
16.300
16.250
VIN = 24 V
16.200
75
16.150
70
16.100
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Load Current - A
0.8
Figure 44. Efficiency vs Load
32
0.9
1.0
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Load Current - A
0.8
0.9
1.0
Figure 45. Load Regulation, Two Input Voltage Extremes
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Application 3: Wide Input Voltage LED Constant-Current Driver
This application uses the TPS40200 as a buck controller that drives a string of LED diodes. The feedback point
for this circuit is a sense resistor in series with this string. The low 0.7-V reference minimizes power wasted in
this resistor, and maintains the LED current at a value given by 0.7/RSENSE. As the input voltage is varied, the
duty cycle changes to maintain the LED current at a constant value so that the light intensity does not change
with large input voltage variations.
+
+
Figure 46. Wide Input Voltage-Range LED Driver
100
Efficiency - %
90
80
70
60
50
10.0
15.0
20.0
Input Voltage - V
25.0
30.0
Figure 47. Efficiency vs Input Voltage
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DESIGN REFERENCES
R3
R1
Input
C5
C3
TPS40200
C6
RSENSE
CIN
VDD
RC
Q
C4
R5
ISEN
SS
Output
R4
COMP
L
GDRV
D
COUT
C7
C8
FB
R8
GND
Pwr
Gnd
R9
R10
R6
C9
Input
R3
C5
C6
VDD
SS
C7
COMP
TPS40200
RC
R5
C8
C3
R1
C4
R4
RSENSE
ISEN
CIN
GDRV
GND
FB
High-current
Power-stage
components
Q
Output
Low-current
control components
R6
D L
R9
R10
Kelvin Gnd
C9
R8
Power Gnd
Kelvin Voltage Sense
Figure 48. PC Board Layout Recommendations
34
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DESIGN REFERENCES (continued)
Layout Hints
• AC current loops must be kept as short as possible. For the maximum effectiveness from C1, place it near
the VDD pin of the controller and design the input ac loop consisting of C1-RSENSE-Q1-D1 to be as short as
possible. Excessive high-frequency noise on VDD during switching degrades overall regulation as the load
increases.
• Output loop A (D1-L1-C2) also should be kept as small as possible. Otherwise, the application’s output noise
performance is degraded.
• It is recommended that traces carrying large ac currents NOT be connected through a ground plane. Instead,
use PCB traces on the top layer to conduct the ac current and use the ground plane as a noise shield. Split
the ground plane as necessary to keep noise away from the TPS40200 and noise-sensitive areas, such as
feedback resistors, R6 and R10.
• Keep the SW node as physically small as possible to minimize parasitic capacitance and to minimize
radiated emissions
• For good output voltage regulation, Kelvin connections should be brought from the load to R6 and R10.
• The trace from the R6-R10 junction to the TPS40200 should be short and kept away from any noise source,
such as the SW node.
• The gate drive trace should be as close to the power FET gate as possible.
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DESIGN REFERENCES (continued)
The TPS40200 is encapsulated in a standard plastic SOIC-8 package. The typical PC-board layout for this
package is shown in Figure 49.
3.81
3
5.2
7.4
2.2
1.27
0.6
Dimensions are in millimeters
Figure 49. Suggested SOIC-8 PC-Board Footprint
Related Parts
•
•
TPS4007/9 Low Input Synchronous Buck Controller
TL5001 Wide Input Range Controller
Reference Documents
•
•
•
•
•
•
36
Under the Hood of Low Voltage DC/DC Converters, SEM1500 Topic 5, 2002 Seminar Series
Understanding Buck Power Stages in Switchmode Power Supplies, SLVA057, March 1999
Design and Application Guide for High Speed MOSFET Gate Drive Circuits, SEM 1400, 2001 Seminar
Series
Designing Stable Control Loops, SEM 1400, 2001 Seminar Series
Power.TI.com
TPS40K designer software. This simple design tool supports the TPS40xxx family of controllers. To order a
CD from the Product Information Center, request SLU015-TPS40k/SWIFT CD-ROM.
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS40200MDREP
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
V62/07618-01XE
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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